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Helene Carrere
Helene Carrere
Verified email at insa-toulouse.fr
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Cited by
Year
Excitonic Linewidth Approaching the Homogeneous Limit in -Based van der Waals Heterostructures
F Cadiz, E Courtade, C Robert, G Wang, Y Shen, H Cai, T Taniguchi, ...
Physical Review X 7 (2), 021026, 2017
7192017
S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides
S Mazzucato, RJ Potter, A Erol, N Balkan, PR Chalker, TB Joyce, ...
Physica E: Low-dimensional Systems and Nanostructures 17, 242-244, 2003
532003
Room-temperature optical orientation of the exciton spin in cubic Ga N∕ Al N quantum dots
D Lagarde, A Balocchi, H Carrère, P Renucci, T Amand, X Marie, ...
Physical Review B 77 (4), 041304, 2008
522008
Photoconductivity of self-assembled ZnO nanoparticles synthesized by organometallic chemistry
J Carrey, H Carrere, ML Kahn, B Chaudret, X Marie, M Respaud
Semiconductor science and technology 23 (2), 025003, 2007
522007
Electrical spin injection into p-doped quantum dots through a tunnel barrier
L Lombez, P Renucci, PF Braun, H Carrère, X Marie, T Amand, ...
Applied physics letters 90 (8), 2007
522007
Spin dynamics in dilute nitride semiconductors at room temperature
L Lombez, PF Braun, H Carrere, B Urbaszek, P Renucci, T Amand, ...
Applied Physics Letters 87 (25), 2005
522005
Ultrawideband wavelength-tunable hybrid external-cavity lasers
A Verdier, G de Valicourt, R Brenot, H Debregeas, P Dong, M Earnshaw, ...
Journal of Lightwave Technology 36 (1), 37-43, 2018
512018
Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence
S Mazzucato, P Boonpeng, H Carrère, D Lagarde, A Arnoult, G Lacoste, ...
Semiconductor science and technology 28 (2), 022001, 2013
502013
RF plasma investigations for plasma-assisted MBE growth of (Ga, In)(As, N) materials
H Carrere, A Arnoult, A Ricard, E Bedel-Pereira
Journal of crystal growth 243 (2), 295-301, 2002
492002
Electron spin dynamics and g-factor in GaAsBi
S Mazzucato, TT Zhang, H Carrère, D Lagarde, P Boonpeng, A Arnoult, ...
Applied Physics Letters 102 (25), 2013
452013
Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs
RJ Potter, N Balkan, X Marie, H Carrere, E Bedel, G Lacoste
physica status solidi (a) 187 (2), 623-632, 2001
422001
Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys
J Plaza, JL Castaño, BJ García, H Carrère, E Bedel-Pereira
Applied Physics Letters 86 (12), 2005
372005
Anisotropic electron g factor as a probe of the electronic structure of GaBi x As 1− x/GaAs epilayers
CA Broderick, S Mazzucato, H Carrère, T Amand, H Makhloufi, A Arnoult, ...
Physical Review B 90 (19), 195301, 2014
362014
Electronic transport in n-and p-type modulation doped GaxIn1− xNyAs1− y/GaAs quantum wells
Y Sun, N Balkan, M Aslan, SB Lisesivdin, H Carrere, MC Arikan, X Marie
Journal of Physics: Condensed Matter 21 (17), 174210, 2009
362009
Comparison of the optical gain of InGaAsN quantum-well lasers with GaAs or GaAsP barriers
H Carrère, X Marie, J Barrau, T Amand
Applied Physics Letters 86 (7), 2005
342005
Optical gain of InGaAsN∕ InP quantum wells for laser applications
H Carrere, X Marie, L Lombez, T Amand
Applied Physics Letters 89 (18), 2006
332006
Electron spin filtering by thin GaNAs/GaAs multiquantum wells
Y Puttisong, XJ Wang, IA Buyanova, H Carrere, F Zhao, A Balocchi, ...
Applied Physics Letters 96 (5), 2010
322010
Exciton and hole spin dynamics in ZnO investigated by time-resolved photoluminescence experiments
D Lagarde, A Balocchi, P Renucci, H Carrère, F Zhao, T Amand, X Marie, ...
Physical Review B 78 (3), 033203, 2008
322008
Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
S Mazzucato, H Lehec, H Carrère, H Makhloufi, A Arnoult, C Fontaine, ...
Nanoscale Research Letters 9, 1-5, 2014
292014
Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
H Carrère, X Marie, J Barrau, T Amand, SB Bouzid, V Sallet, JC Harmand
Journal of Physics: Condensed Matter 16 (31), S3215, 2004
282004
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