Andrei Vescan
Andrei Vescan
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TitleCited byYear
12 W/mm AlGaN-GaN HFETs on silicon substrates
JW Johnson, EL Piner, A Vescan, R Therrien, P Rajagopal, JC Roberts, ...
IEEE Electron Device Letters 25 (7), 459-461, 2004
Current instabilities in GaN-based devices
I Daumiller, D Theron, C Gaquiere, A Vescan, R Dietrich, A Wieszt, ...
IEEE Electron Device Letters 22 (2), 62-64, 2001
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
JW Johnson, RJ Therrien, A Vescan, JD Brown
US Patent 7,071,498, 2006
AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates
JD Brown, R Borges, E Piner, A Vescan, S Singhal, R Therrien
Solid-State Electronics 46 (10), 1535-1539, 2002
Diamond surface-channel FET structure with 200 V breakdown voltage
P Gluche, A Aleksov, A Vescan, W Ebert, E Kohn
IEEE Electron Device Letters 18 (11), 547-549, 1997
Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis
R Stoklas, D Gregušová, J Novak, A Vescan, P Kordoš
Applied Physics Letters 93 (12), 124103, 2008
Heat-spreading diamond films for GaN-based high-power transistor devices
M Seelmann-Eggebert, P Meisen, F Schaudel, P Koidl, A Vescan, H Leier
Diamond and Related Materials 10 (3-7), 744-749, 2001
Diamond junction FETs based on δ-doped channels
A Aleksov, A Vescan, M Kunze, P Gluche, W Ebert, E Kohn, A Bergmeier, ...
Diamond and Related Materials 8 (2-5), 941-945, 1999
Very high temperature operation of diamond Schottky diode
A Vescan, I Daumiller, P Gluche, W Ebert, E Kohn
IEEE Electron Device Letters 18 (11), 556-558, 1997
High temperature, high voltage operation of diamond Schottky diode
A Vescan, I Daumiller, P Gluche, W Ebert, E Kohn
Diamond and related materials 7 (2-5), 581-584, 1998
Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates
N Ketteniss, LR Khoshroo, M Eickelkamp, M Heuken, H Kalisch, ...
Semiconductor science and technology 25 (7), 075013, 2010
Material, process, and device development of GaN-based HFETs on silicon substrates
JW Johnson, J Gao, K Lucht, J Williamson, C Strautin, J Riddle, ...
Electrochemical Society Proceedings 6 (405), 2004, 2004
Diamond diodes and transistors
A Aleksov, A Denisenko, M Kunze, A Vescan, A Bergmaier, G Dollinger, ...
Semiconductor science and technology 18 (3), S59, 2003
Recessed-gate enhancement-mode AlGaN/GaN heterostructure field-effect transistors on Si with record DC performance
H Hahn, G Lükens, N Ketteniss, H Kalisch, A Vescan
Applied Physics Express 4 (11), 114102, 2011
Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation
JS Lee, A Vescan, A Wieszt, R Dietrich, H Leier, YS Kwon
Electronics Letters 37 (2), 130-131, 2001
High-voltage Schottky diode on epitaxial diamond layer
W Ebert, A Vescan, P Gluche, T Borst, E Kohn
Diamond and Related Materials 6 (2-4), 329-332, 1997
δ-Doping in diamond
M Kunze, A Vescan, G Dollinger, A Bergmaier, E Kohn
Carbon 37 (5), 787-791, 1999
High-temperature, high-voltage operation of pulse-doped diamond MESFET
A Vescan, P Gluche, W Ebert, E Kohn
IEEE Electron Device Letters 18 (5), 222-224, 1997
Gallium nitride material transistors and methods associated with the same
WH Nagy, RM Borges, JD Brown, AD Chaudhari, JW Cook Jr, ...
US Patent 7,135,720, 2006
The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices
H Yacoub, D Fahle, M Finken, H Hahn, C Blumberg, W Prost, H Kalisch, ...
Semiconductor Science and Technology 29 (11), 115012, 2014
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