Barry O'Sullivan
Barry O'Sullivan
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TitleCited byYear
Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy
JY Zhang, IW Boyd, BJ O'sullivan, PK Hurley, PV Kelly, JP Senateur
Journal of Non-Crystalline Solids 303 (1), 134-138, 2002
Crystalline thin‐foil silicon solar cells: where crystalline quality meets thin‐film processing
F Dross, K Baert, T Bearda, J Deckers, V Depauw, O El Daif, I Gordon, ...
Progress in Photovoltaics: Research and Applications 20 (6), 770-784, 2012
interface properties following rapid thermal processing
BJ O’sullivan, PK Hurley, C Leveugle, JH Das
Journal of Applied Physics 89 (7), 3811-3820, 2001
Estimation of fixed charge densities in hafnium-silicate gate dielectrics
VS Kaushik, BJ O'Sullivan, G Pourtois, N Van Hoornick, A Delabie, ...
IEEE Transactions on Electron Devices 53 (10), 2627-2633, 2006
Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD
Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 428 (1-2), 263-268, 2003
Interface of ultrathin HfO2 films deposited by UV-photo-CVD
Q Fang, JY Zhang, Z Wang, M Modreanu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 453, 203-207, 2004
Characterisation of HfO2 deposited by photo-induced chemical vapour deposition
Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 427 (1-2), 391-396, 2003
Examination of the Si (111) SiO2, Si (110) SiO2, and Si (100) SiO2 interfacial properties following rapid thermal annealing
PK Hurley, BJ O’Sullivan, FN Cubaynes, PA Stolk, FP Widdershoven, ...
Journal of the Electrochemical Society 149 (3), G194-G197, 2002
Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
C Dubourdieu, H Roussel, C Jimenez, M Audier, JP SÚnateur, S Lhostis, ...
Materials Science and Engineering: B 118 (1-3), 105-111, 2005
Analysis of centers at the interface following rapid thermal annealing
PK Hurley, A Stesmans, VV Afanas’ ev, BJ O’sullivan, E O’Callaghan
Journal of applied physics 93 (7), 3971-3973, 2003
Passivation of a metal contact with a tunneling layer
X Loozen, JB Larsen, F Dross, M Aleman, T Bearda, BJ O'Sullivan, ...
Energy Procedia 21, 75-83, 2012
Interface States and P b Defects at the Si (100)/HfO2 Interface
PK Hurley, BJ O’Sullivan, VV Afanas’ev, A Stesmans
Electrochemical and solid-state letters 8 (2), G44-G46, 2005
Effective work function modulation by controlled dielectric monolayer deposition
L Pantisano, T Schram, B O’Sullivan, T Conard, S De Gendt, ...
Applied physics letters 89 (11), 113505, 2006
Low VTCMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal
S Kubicek, T Schram, V Paraschiv, R Vos, M Demand, C Adelmann, ...
2007 IEEE International Electron Devices Meeting, 49-52, 2007
Electrical evaluation of defects at the Si (100)/HfO2 interface
BJ O’Sullivan, PK Hurley, E O’Connor, M Modreanu, H Roussel, ...
Journal of the Electrochemical Society 151 (8), G493-G496, 2004
Metal gate thickness optimization for MuGFET performance improvement
I Ferain, N Collaert, B O'Sullivan, T Conard, M Popovici, S Van Elshocht, ...
ESSDERC 2008-38th European Solid-State Device Research Conference, 202-205, 2008
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
Optimization of sub-melt laser anneal: performance and reliability
S Severi, E Augendre, S Thirupapuliyur, K Ahmed, S Felch, V Parihar, ...
2006 International Electron Devices Meeting, 1-4, 2006
Flat band voltage shift and oxide properties after rapid thermal annealing
BJ O'Sullivan, PK Hurley, FN Cubaynes, PA Stolk, FP Widdershoven
Microelectronics Reliability 41 (7), 1053-1056, 2001
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