Harsh environment silicon carbide sensors for health and performance monitoring of aerospace systems: A review DG Senesky, B Jamshidi, KB Cheng, AP Pisano IEEE Sensors Journal 9 (11), 1472-1478, 2009 | 240 | 2009 |
A SiC MEMS resonant strain sensor for harsh environment applications RG Azevedo, DG Jones, AV Jog, B Jamshidi, DR Myers, L Chen, X Fu, ... IEEE Sensors Journal 7 (4), 568-576, 2007 | 227 | 2007 |
Advances in silicon carbide science and technology at the micro-and nanoscales R Maboudian, C Carraro, DG Senesky, CS Roper Journal of Vacuum Science & Technology A 31 (5), 2013 | 184 | 2013 |
AlN/3C–SiC composite plate enabling high‐frequency and high‐Q micromechanical resonators CM Lin, YY Chen, VV Felmetsger, DG Senesky, AP Pisano Advanced Materials 24 (20), 2722-2727, 2012 | 178 | 2012 |
Solar-blind photodetectors for harsh electronics DS Tsai, WC Lien, DH Lien, KM Chen, ML Tsai, DG Senesky, YC Yu, ... Scientific reports 3 (1), 2628, 2013 | 142 | 2013 |
Temperature sensor based on 4H-silicon carbide pn diode operational from 20 C to 600 C N Zhang, CM Lin, DG Senesky, AP Pisano Applied Physics Letters 104 (7), 2014 | 122 | 2014 |
High-Q aluminum nitride Lamb wave resonators with biconvex edges CM Lin, YJ Lai, JC Hsu, YY Chen, DG Senesky, AP Pisano Applied Physics Letters 99 (14), 2011 | 105 | 2011 |
AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices CM Lin, WC Lien, VV Felmetsger, MA Hopcroft, DG Senesky, AP Pisano Applied Physics Letters 97 (14), 2010 | 94 | 2010 |
4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450 WC Lien, DS Tsai, DH Lien, DG Senesky, JH He, AP Pisano IEEE Electron Device Letters 33 (11), 1586-1588, 2012 | 91 | 2012 |
Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures CM Lin, YY Chen, VV Felmetsger, WC Lien, T Riekkinen, DG Senesky, ... Journal of Micromechanics and Microengineering 23 (2), 025019, 2013 | 84 | 2013 |
Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating M Hou, H So, AJ Suria, AS Yalamarthy, DG Senesky IEEE Electron Device Letters 38 (1), 56-59, 2016 | 82 | 2016 |
High responsivity, low dark current ultraviolet photodetectors based on two-dimensional electron gas interdigitated transducers PF Satterthwaite, AS Yalamarthy, NA Scandrette, AKM Newaz, ... Acs Photonics 5 (11), 4277-4282, 2018 | 79 | 2018 |
New developments in sensing technology for structural health monitoring SC Mukhopadhyay Springer Science & Business Media, 2011 | 79 | 2011 |
Anchor loss reduction in AlN Lamb wave resonators using phononic crystal strip tethers CM Lin, JC Hsu, DG Senesky, AP Pisano 2014 IEEE International Frequency Control Symposium (FCS), 1-5, 2014 | 73 | 2014 |
Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures TK Nguyen, HP Phan, T Dinh, KM Dowling, ARM Foisal, DG Senesky, ... Materials & Design 156, 441-445, 2018 | 66 | 2018 |
Profile evolution of high aspect ratio silicon carbide trenches by inductive coupled plasma etching KM Dowling, EH Ransom, DG Senesky Journal of Microelectromechanical Systems 26 (1), 135-142, 2016 | 61 | 2016 |
Continuous V-grooved AlGaN/GaN surfaces for high-temperature ultraviolet photodetectors H So, J Lim, DG Senesky IEEE Sensors Journal 16 (10), 3633-3639, 2016 | 57 | 2016 |
Nanoarchitectonics for wide bandgap semiconductor nanowires: Toward the next generation of nanoelectromechanical systems for environmental monitoring TA Pham, A Qamar, T Dinh, MK Masud, M Rais‐Zadeh, DG Senesky, ... Advanced Science 7 (21), 2001294, 2020 | 56 | 2020 |
Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure HP Phan, KM Dowling, TK Nguyen, T Dinh, DG Senesky, T Namazu, ... Materials & Design 156, 16-21, 2018 | 50 | 2018 |
Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection WC Lien, DS Tsai, SH Chiu, DG Senesky, R Maboudian, AP Pisano, ... IEEE Electron Device Letters 32 (11), 1564-1566, 2011 | 43 | 2011 |