| A SiC MEMS resonant strain sensor for harsh environment applications RG Azevedo, DG Jones, AV Jog, B Jamshidi, DR Myers, L Chen, X Fu, ... IEEE Sensors Journal 7 (4), 568-576, 2007 | 217 | 2007 |
| Harsh environment silicon carbide sensors for health and performance monitoring of aerospace systems: A review DG Senesky, B Jamshidi, KB Cheng, AP Pisano IEEE Sensors Journal 9 (11), 1472-1478, 2009 | 215 | 2009 |
| AlN/3C–SiC composite plate enabling high‐frequency and high‐Q micromechanical resonators CM Lin, YY Chen, VV Felmetsger, DG Senesky, AP Pisano Advanced Materials 24 (20), 2722-2727, 2012 | 176 | 2012 |
| Advances in silicon carbide science and technology at the micro-and nanoscales R Maboudian, C Carraro, DG Senesky, CS Roper Journal of Vacuum Science & Technology A 31 (5), 2013 | 174 | 2013 |
| Solar-blind photodetectors for harsh electronics DS Tsai, WC Lien, DH Lien, KM Chen, ML Tsai, DG Senesky, YC Yu, ... Scientific reports 3 (1), 2628, 2013 | 126 | 2013 |
| Temperature sensor based on 4H-silicon carbide pn diode operational from 20 C to 600 C N Zhang, CM Lin, DG Senesky, AP Pisano Applied Physics Letters 104 (7), 2014 | 111 | 2014 |
| High-Q aluminum nitride Lamb wave resonators with biconvex edges CM Lin, YJ Lai, JC Hsu, YY Chen, DG Senesky, AP Pisano Applied Physics Letters 99 (14), 2011 | 101 | 2011 |
| AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices CM Lin, WC Lien, VV Felmetsger, MA Hopcroft, DG Senesky, AP Pisano Applied Physics Letters 97 (14), 2010 | 95 | 2010 |
| Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures CM Lin, YY Chen, VV Felmetsger, WC Lien, T Riekkinen, DG Senesky, ... Journal of Micromechanics and Microengineering 23 (2), 025019, 2013 | 84 | 2013 |
| 4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450 WC Lien, DS Tsai, DH Lien, DG Senesky, JH He, AP Pisano IEEE electron device letters 33 (11), 1586-1588, 2012 | 84 | 2012 |
| New developments in sensing technology for structural health monitoring SC Mukhopadhyay Springer Science & Business Media, 2011 | 74 | 2011 |
| Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating M Hou, H So, AJ Suria, AS Yalamarthy, DG Senesky IEEE Electron Device Letters 38 (1), 56-59, 2016 | 72 | 2016 |
| Anchor loss reduction in AlN Lamb wave resonators using phononic crystal strip tethers CM Lin, JC Hsu, DG Senesky, AP Pisano 2014 IEEE International Frequency Control Symposium (FCS), 1-5, 2014 | 64 | 2014 |
| High responsivity, low dark current ultraviolet photodetectors based on two-dimensional electron gas interdigitated transducers PF Satterthwaite, AS Yalamarthy, NA Scandrette, AKM Newaz, ... ACS Photonics 5 (11), 4277-4282, 2018 | 63 | 2018 |
| Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures TK Nguyen, HP Phan, T Dinh, KM Dowling, ARM Foisal, DG Senesky, ... Materials & Design 156, 441-445, 2018 | 60 | 2018 |
| Profile evolution of high aspect ratio silicon carbide trenches by inductive coupled plasma etching KM Dowling, EH Ransom, DG Senesky Journal of Microelectromechanical Systems 26 (1), 135-142, 2016 | 52 | 2016 |
| Continuous V-grooved AlGaN/GaN surfaces for high-temperature ultraviolet photodetectors H So, J Lim, DG Senesky IEEE Sensors Journal 16 (10), 3633-3639, 2016 | 52 | 2016 |
| Nanoarchitectonics for wide bandgap semiconductor nanowires: Toward the next generation of nanoelectromechanical systems for environmental monitoring TA Pham, A Qamar, T Dinh, MK Masud, M Rais‐Zadeh, DG Senesky, ... Advanced Science 7 (21), 2001294, 2020 | 47 | 2020 |
| Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure HP Phan, KM Dowling, TK Nguyen, T Dinh, DG Senesky, T Namazu, ... Materials & Design 156, 16-21, 2018 | 46 | 2018 |
| Silicon carbide resonant tuning fork for microsensing applications in high-temperature and high G-shock environments DR Myers, KB Cheng, B Jamshidi, RG Azevedo, DG Senesky, L Chen, ... Journal of Micro/Nanolithography, MEMS and MOEMS 8 (2), 021116-021116-7, 2009 | 42 | 2009 |
