| Electrically erasable phase change memory SR Ovshinsky, SJ Hudgens, W Czubatyj, DA Strand, GC Wicker US Patent 5,166,758, 1992 | 661 | 1992 |
| Overview of phase-change chalcogenide nonvolatile memory technology S Hudgens, B Johnson MRS bulletin 29 (11), 829-832, 2004 | 644 | 2004 |
| Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom SR Ovshinsky, W Czubatyj, Q Ye, DA Strand, SJ Hudgens US Patent 5,296,716, 1994 | 554 | 1994 |
| Reduced area intersection between electrode and programming element CH Dennison, GC Wicker, TA Lowrey, SJ Hudgens, C Chiang, D Xu US Patent 6,673,700, 2004 | 427 | 2004 |
| Compositionally modified resistive electrode TA Lowrey, SJ Hudgens, P Klersy US Patent 6,555,860, 2003 | 410 | 2003 |
| Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated … SR Ovshinsky, SJ Hudgens, DA Strand, W Czubatyj, ... US Patent 5,335,219, 1994 | 387 | 1994 |
| Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life SR Ovshinsky, SJ Hudgens, W Czubatyj, DA Strand, GC Wicker US Patent 5,341,328, 1994 | 341 | 1994 |
| Multiple layer phrase-change memory SJ Hudgens, TA Lowrey, PJ Klersy US Patent 6,674,115, 2004 | 339 | 2004 |
| Scaling analysis of phase-change memory technology A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, S Hudgens, R Bez IEEE International Electron Devices Meeting 2003, 29.6. 1-29.6. 4, 2003 | 339 | 2003 |
| Plasma deposited coatings, and low temperature plasma method of making same SJ Hudgens, AG Johncock, SR Ovshinsky, P Nath US Patent 4,737,379, 1988 | 325 | 1988 |
| Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated … SR Ovshinsky, SJ Hudgens, D Strand, W Czubatyj, ... US Patent 5,596,522, 1997 | 319 | 1997 |
| Multiple layer phase-change memory SJ Hudgens, TA Lowrey, PJ Klersy US Patent 6,507,061, 2003 | 313 | 2003 |
| Electrically erasable memory elements having improved set resistance stability SR Ovshinsky, SJ Hudgens, W Czubatyj, DA Strand, GC Wicker US Patent 5,414,271, 1995 | 310 | 1995 |
| Electrically programmable memory element with multi-regioned contact T Lowrey, SJ Hudgens, PJ Klersy US Patent 6,617,192, 2003 | 254 | 2003 |
| Modified contact for programmable devices SJ Hudgens, TA Lowrey US Patent 6,511,862, 2003 | 254 | 2003 |
| Processing phase change material to improve programming speed SJ Hudgens, T Lowrey US Patent 7,893,419, 2011 | 247 | 2011 |
| Thin film electro-optical devices SR Ovshinsky, RR Johnson, SJ Hudgens, RW Pryor, GC Wicker, ... US Patent 4,766,471, 1988 | 246 | 1988 |
| Thin film field effect transistor and method of making same SR Ovshinsky, SJ Hudgens US Patent 4,769,338, 1988 | 235 | 1988 |
| Thin film field effect transistor and method of making same SR Ovshinsky, SJ Hudgens US Patent 4,843,443, 1989 | 208 | 1989 |
| Thin film field effect transistor SR Ovshinsky, SJ Hudgens US Patent 4,670,763, 1987 | 188 | 1987 |
