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Stephen J Sweeney
Stephen J Sweeney
Professor of Photonics and Nanotechnology, James Watt School of Engineering, University of Glasgow
Verified email at glasgow.ac.uk
Title
Cited by
Cited by
Year
Springer handbook of electronic and photonic materials
S Kasap, P Capper
Springer, 2017
7162017
Molecular beam epitaxy: from research to mass production
M Henini
Newnes, 2012
2652012
The temperature dependence of 1.3-and 1.5-/spl mu/m compressively strained InGaAs (P) MQW semiconductor lasers
AF Phillips, SJ Sweeney, AR Adams, PJA Thijs
IEEE Journal of selected topics in quantum electronics 5 (3), 401-412, 1999
2481999
Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared
SJ Sweeney, SR Jin
Journal of applied physics 113 (4), 2013
2422013
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
Z Batool, K Hild, TJC Hosea, X Lu, T Tiedje, SJ Sweeney
Journal of Applied Physics 111 (11), 2012
2222012
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers
R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
IEEE Journal of Selected Topics in Quantum Electronics 8 (4), 801-810, 2002
2092002
Band engineering in dilute nitride and bismide semiconductor lasers
CA Broderick, M Usman, SJ Sweeney, EP O’Reilly
Semiconductor Science and Technology 27 (9), 094011, 2012
2052012
Laser operation of Ga (NAsP) lattice-matched to (001) silicon substrate
S Liebich, M Zimprich, A Beyer, C Lange, DJ Franzbach, S Chatterjee, ...
Applied Physics Letters 99 (7), 2011
1822011
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser
P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ...
Applied Physics Letters 102 (24), 2013
1782013
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
IEEE Journal of Selected Topics in Quantum Electronics 9 (5), 1228-1238, 2003
1732003
The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs (P) MQW semiconductor diode lasers
SJ Sweeney, AF Phillips, AR Adams, EP O'reilly, PJA Thijs
IEEE Photonics Technology Letters 10 (8), 1076-1078, 1998
1441998
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs∕ GaAs quantum-dot lasers
IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ...
Applied Physics Letters 87 (21), 2005
1092005
Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ...
physica status solidi (b) 251 (6), 1276-1281, 2014
992014
Impact of alloy disorder on the band structure of compressively strained GaBi x As 1− x
M Usman, CA Broderick, Z Batool, K Hild, TJC Hosea, SJ Sweeney, ...
Physical Review B 87 (11), 115104, 2013
932013
The effect of Bi composition to the optical quality of GaAs1− xBix
AR Mohmad, F Bastiman, CJ Hunter, JS Ng, SJ Sweeney, JPR David
Applied Physics Letters 99 (4), 042107, 2011
862011
Efficiency limits of laser power converters for optical power transfer applications
J Mukherjee, S Jarvis, M Perren, SJ Sweeney
Journal of Physics D: Applied Physics 46 (26), 264006, 2013
782013
Optical gain in GaAsBi/GaAs quantum well diode lasers
SJS Igor P Marko, Christopher A Broderick, Shirong Jin, Peter Ludewig ...
Scientific Reports 6, 28863, 2016
77*2016
Physical properties and optimization of GaBiAs/(Al) GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
IP Marko, P Ludewig, ZL Bushell, SR Jin, K Hild, Z Batool, S Reinhard, ...
Journal of Physics D: Applied Physics 47 (34), 345103, 2014
762014
Effects of rapid thermal annealing on GaAs1-xBix alloys
AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ...
Applied Physics Letters 101 (1), 2012
762012
Recombination mechanisms and band alignment of GaAs1− xBix/GaAs light emitting diodes
N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ...
Applied Physics Letters 100 (5), 2012
762012
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