| Iron and intrinsic deep level states in Ga2O3 ME Ingebrigtsen, JB Varley, AY Kuznetsov, BG Svensson, G Alfieri, ... Applied Physics Letters 112 (4), 2018 | 259 | 2018 |
| Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ... Apl Materials 7 (2), 2019 | 196 | 2019 |
| Characterization of a silicon IGBT and silicon carbide MOSFET cross-switch hybrid M Rahimo, F Canales, RA Minamisawa, C Papadopoulos, U Vemulapati, ... IEEE Transactions on Power Electronics 30 (9), 4638-4642, 2015 | 141 | 2015 |
| Current sharing behavior in Si IGBT and SiC MOSFET cross-switch hybrid RA Minamisawa, U Vemulapati, A Mihaila, C Papadopoulos, M Rahimo IEEE Electron Device Letters 37 (9), 1178-1180, 2016 | 58 | 2016 |
| Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage G Brezeanu, M Badila, B Tudor, J Millan, P Godignon, F Udrea, ... IEEE Transactions on Electron Devices 48 (9), 2148-2153, 2001 | 44 | 2001 |
| Superjunction IGBT filling the gap between SJ MOSFET and ultrafast IGBT F Bauer, I Nistor, A Mihaila, M Antoniou, F Udrea IEEE electron device letters 33 (9), 1288-1290, 2012 | 38 | 2012 |
| ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation J Vobecký, P Hazdra, V Záhlava, A Mihaila, M Berthou Solid-State Electronics 94, 32-38, 2014 | 36 | 2014 |
| Development of a 60 Deep Trench and Refill Process for Manufacturing Si-Based High-Voltage Super-Junction Structures H Bartolf, A Mihaila, I Nistor, M Jurisch, B Leibold, M Zimmermann IEEE transactions on semiconductor manufacturing 26 (4), 529-541, 2013 | 35 | 2013 |
| Normally-off trench JFET technology in 4H silicon carbide RK Malhan, Y Takeuchi, M Kataoka, AP Mihaila, SJ Rashid, F Udrea, ... Microelectronic engineering 83 (1), 107-111, 2006 | 34 | 2006 |
| APL Mater. 7, 022510 (2019) ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ... | 34 | |
| Robust 3.3 kV silicon carbide MOSFETs with surge and short circuit capability L Knoll, A Mihaila, F Bauer, V Sundaramoorthy, E Bianda, R Minamisawa, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 33 | 2017 |
| Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects ME Ingebrigtsen, L Vines, G Alfieri, A Mihaila, U Badstübner, ... Materials Science Forum 897, 755-758, 2017 | 30 | 2017 |
| Simulation and experimental results of 3.3 kV cross switch “Si-IGBT and SiC-MOSFET” hybrid UR Vemulapati, A Mihaila, RA Minamisawa, F Canales, M Rahimo, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 28 | 2016 |
| Study of 4H-SiC Schottky diode designs for 3.3 kV applications H Bartolf, V Sundaramoorthy, A Mihaila, M Berthou, P Godignon, J Millan Materials Science Forum 778, 795-799, 2014 | 28 | 2014 |
| Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by VSD-Method F Hoffmann, V Soler, A Mihaila, N Kaminski 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 27 | 2019 |
| High-voltage 4H-SiC power MOSFETs with Boron-doped gate oxide V Soler, M Cabello, M Berthou, J Montserrat, J Rebollo, P Godignon, ... IEEE Transactions on Industrial Electronics 64 (11), 8962-8970, 2017 | 25 | 2017 |
| Thick silicon membrane technology for reliable and high performance operation of high voltage LIGBTs in Power ICs T Trajkovic, F Udrea, C Lee, N Udugampola, V Pathirana, A Mihaila, ... 2008 20th International Symposium on Power Semiconductor Devices and IC's …, 2008 | 22 | 2008 |
| Isothermal annealing study of the EH1 and EH3 levels in n-type 4H-SiC G Alfieri, A Mihaila Journal of Physics: Condensed Matter 32 (46), 465703, 2020 | 21 | 2020 |
| A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET A Mihaila, F Udrea, G Amaratunga, G Brezeanu 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 …, 2000 | 21 | 2000 |
| Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ... Journal of Applied Physics 125 (18), 2019 | 20 | 2019 |
