| Detailed analysis of the microwave-detected photoconductance decay in crystalline silicon K Lauer, A Laades, H Übensee, H Metzner, A Lawerenz Journal of Applied Physics 104 (10), 2008 | 104 | 2008 |
| Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime AL Blum, JS Swirhun, RA Sinton, F Yan, S Herasimenka, T Roth, K Lauer, ... IEEE Journal of Photovoltaics 4 (1), 525-531, 2013 | 65 | 2013 |
| Light‐induced degradation in indium‐doped silicon C Möller, K Lauer physica status solidi (RRL)–Rapid Research Letters 7 (7), 461-464, 2013 | 52 | 2013 |
| Influence of the feedstock purity on the solar cell efficiency S Meyer, S Wahl, A Molchanov, K Neckermann, C Möller, K Lauer, ... Solar energy materials and solar cells 130, 668-672, 2014 | 22 | 2014 |
| Surface photovoltage investigation of recombination at the a-Si/c-Si heterojunction L Korte, A Laades, K Lauer, R Stangl, D Schaffarzik, M Schmidt Thin Solid Films 517 (23), 6396-6400, 2009 | 17 | 2009 |
| Activation energies of the InSi‐Sii defect transitions obtained by carrier lifetime measurements K Lauer, C Möller, C Teßmann, D Schulze, NV Abrosimov physica status solidi c 14 (5), 1600033, 2017 | 16 | 2017 |
| ASi-Sii-defect model of light-induced degradation in silicon C Möller, K Lauer Energy Procedia 55, 559-563, 2014 | 16 | 2014 |
| Systematic characterization of multi-crystalline silicon String Ribbon wafer C Reimann, G Müller, J Friedrich, K Lauer, A Simonis, H Wätzig, S Krehan, ... Journal of crystal growth 361, 38-43, 2012 | 16 | 2012 |
| Comprehensive investigation of silicon surface passivation by a ‐Si:H and a ‐SiNx:H films A Laades, M Blech, M Bähr, K Lauer, A Lawerenz physica status solidi c 8 (3), 763-766, 2011 | 16 | 2011 |
| Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon C Möller, T Bartel, F Gibaja, K Lauer Journal of Applied Physics 116 (2), 2014 | 14 | 2014 |
| The effect of Al and Fe doping on solar cells made from compensated silicon T Bartel, K Lauer, M Heuer, M Kaes, M Walerysiak, F Gibaja, J Lich, ... Energy Procedia 27, 45-52, 2012 | 14 | 2012 |
| Advances in multicrystalline LLC-Si thin film solar cells G Andrä, J Plentz, A Gawlik, E Ose, F Falk, K Lauer Proc. 22nd Europ. Photovoltaic Solar Energy Conf, 1967-1970, 2007 | 14 | 2007 |
| Making use of silicon wafers with low lifetimes by adequate POCl3 diffusion J Lossen, L Mittelstädt, S Dauwe, K Lauer, C Beneking 20th European Photovolatic Solar Energy Conference and Exhibition, Barcelona …, 2005 | 14 | 2005 |
| Calibration of excitonic photoluminescence to determine high aluminum concentrations in silicon K Lauer, C Möller, D Schulze, T Bartel, F Kirscht physica status solidi (RRL)–Rapid Research Letters 7 (4), 265-267, 2013 | 13 | 2013 |
| Photoluminescence lifetime imaging using LED arrays as excitation source A Lawerenz, K Lauer, M Blech, A Laades, M Zentgraf EUPVSEC, 2DV 1, 2010 | 13 | 2010 |
| Wet-chemical treatment of solar grade Cz silicon prior to surface passivation A Laades, J Brauer, U Stürzebecher, K Neckermann, K Klimm, M Blech, ... 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, 2009 | 13 | 2009 |
| Analysis of activation energies and decay-time constants of potential-induced degraded crystalline silicon solar cells M Bähr, K Lauer Energy Procedia 77, 2-7, 2015 | 12 | 2015 |
| Dynamics of iron-acceptor-pair formation in co-doped silicon T Bartel, F Gibaja, O Graf, D Gross, M Kaes, M Heuer, F Kirscht, C Möller, ... Applied Physics Letters 103 (20), 2013 | 12 | 2013 |
| Discussion of ASi-Sii-defect model in frame of experimental results on P line in indium doped silicon K Lauer, C Möller, D Schulze, C Ahrens, J Vanhellemont Solid State Phenomena 242, 90-95, 2016 | 9 | 2016 |
| Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect K Lauer, C Möller, D Schulze, C Ahrens AIP Advances 5 (1), 2015 | 9 | 2015 |
