| Structures and techniques for atomic layer deposition S Aoyama, RD Clark, SP Consiglio, M Hopstaken, H Jagannathan, ... US Patent 8,722,548, 2014 | 365 | 2014 |
| Perspective: New process technologies required for future devices and scaling R Clark, K Tapily, KH Yu, T Hakamata, S Consiglio, D O’meara, C Wajda, ... Apl Materials 6 (5), 2018 | 167 | 2018 |
| Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy E Bersch, M Di, S Consiglio, RD Clark, GJ Leusink, AC Diebold Journal of Applied Physics 107 (4), 2010 | 129 | 2010 |
| Comparison of methods to determine bandgaps of ultrathin HfO2 films using spectroscopic ellipsometry M Di, E Bersch, AC Diebold, S Consiglio, RD Clark, GJ Leusink, T Kaack Journal of Vacuum Science & Technology A 29 (4), 2011 | 53 | 2011 |
| Texturing and Tetragonal Phase Stabilization of ALD HfxZr1-xO2 Using a Cyclical Deposition and Annealing Scheme K Tapily, S Consiglio, RD Clark, R Vasić, E Bersch, J Jordan-Sweet, ... ECS Transactions 45 (3), 411, 2012 | 38 | 2012 |
| Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications A Raley, S Thibaut, N Mohanty, K Subhadeep, S Nakamura, A Ko, ... Advanced Etch Technology for Nanopatterning V 9782, 30-43, 2016 | 35 | 2016 |
| High-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes RD Clark, S Consiglio, C Wajda, G Leusink, T Sugawara, H Nakabayashi, ... ECS Transactions 16 (4), 291, 2008 | 29 | 2008 |
| Plasma-assisted atomic layer deposition of conductive hafnium nitride using tetrakis (ethylmethylamino) hafnium for CMOS gate electrode applications S Consiglio, W Zeng, N Berliner, ET Eisenbraun Journal of The Electrochemical Society 155 (3), H196, 2008 | 29 | 2008 |
| Comparison of B2O3 and BN deposited by atomic layer deposition for forming ultrashallow dopant regions by solid state diffusion S Consiglio, RD Clark, D O'Meara, CS Wajda, K Tapily, GJ Leusink Journal of Vacuum Science & Technology A 34 (1), 2016 | 28 | 2016 |
| Physical and electrical effects of the Dep-Anneal-Dep-Anneal (DADA) process for HfO2 in high K/metal gate stacks RD Clark, S Aoyama, S Consiglio, G Nakamura, G Leusink ECS Transactions 35 (4), 815, 2011 | 28 | 2011 |
| Antiferroelectric negative capacitance from a structural phase transition in zirconia M Hoffmann, Z Wang, N Tasneem, A Zubair, PV Ravindran, M Tian, ... Nature communications 13 (1), 1228, 2022 | 27 | 2022 |
| Chemical vapor deposition of ruthenium and ruthenium oxide thin films for advanced complementary metal-oxide semiconductor gate electrode applications F Papadatos, S Consiglio, S Skordas, ET Eisenbraun, AE Kaloyeros, ... Journal of materials research 19 (10), 2947-2955, 2004 | 26 | 2004 |
| Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1− xZrxO2 gate dielectrics deposited by a … R Vasić, S Consiglio, RD Clark, K Tapily, S Sallis, B Chen, D Newby, ... Journal of Applied Physics 113 (23), 2013 | 25 | 2013 |
| Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1− xZrxO2/Al2O3 thin film stacks S Dey, K Tapily, S Consiglio, RD Clark, CS Wajda, GJ Leusink, AR Woll, ... Journal of Applied Physics 120 (12), 2016 | 24 | 2016 |
| Cyclic Plasma Treatment during ALD Hf1-xZrxO2 Deposition MN Bhuyian, D Misra, K Tapily, RD Clark, S Consiglio, CS Wajda, ... ECS Journal of Solid State Science and Technology 3 (5), N83, 2014 | 24 | 2014 |
| Effective Schottky barrier height modulation using dielectric dipoles for source/drain specific contact resistivity improvement KW Ang, K Majumdar, K Matthews, CD Young, C Kenney, C Hobbs, ... 2012 International Electron Devices Meeting, 18.6. 1-18.6. 4, 2012 | 24 | 2012 |
| Characterization of ruthenium and ruthenium oxide thin films deposited by chemical vapor deposition for CMOS gate electrode applications F Papadatos, S Skordas, S Consiglio, AE Kaloyeros, E Eisenbraun MRS Online Proceedings Library (OPL) 745, N3. 3, 2002 | 24 | 2002 |
| APL Mater. 6, 058203 (2018) R Clark, K Tapily, KH Yu, T Hakamata, S Consiglio, D O’Meara, C Wajda, ... | 24 | |
| The impacts of ferroelectric and interfacial layer thicknesses on ferroelectric FET design N Tasneem, MM Islam, Z Wang, H Chen, J Hur, D Triyoso, S Consiglio, ... IEEE Electron Device Letters 42 (8), 1156-1159, 2021 | 23 | 2021 |
| Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications S Dey, KH Yu, S Consiglio, K Tapily, T Hakamata, CS Wajda, GJ Leusink, ... Journal of Vacuum Science & Technology A 35 (3), 2017 | 22 | 2017 |
