Afzaal Qamar
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Thermoresistive effect for advanced thermal sensors: Fundamentals, design considerations, and applications
T Dinh, HP Phan, A Qamar, P Woodfield, NT Nguyen, DV Dao
Journal of Microelectromechanical Systems 26 (5), 966-986, 2017
Environment-friendly carbon nanotube based flexible electronics for noninvasive and wearable healthcare
T Dinh, HP Phan, TK Nguyen, A Qamar, ARM Foisal, TN Viet, CD Tran, ...
Journal of Materials Chemistry C 4 (42), 10061-10068, 2016
Graphite on paper as material for sensitive thermoresistive sensors
T Dinh, HP Phan, DV Dao, P Woodfield, A Qamar, NT Nguyen
Journal of Materials Chemistry C 3 (34), 8776-8779, 2015
Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating
HP Phan, T Dinh, T Kozeki, A Qamar, T Namazu, S Dimitrijev, NT Nguyen, ...
Scientific reports 6 (1), 28499, 2016
Solvent-free fabrication of biodegradable hot-film flow sensor for noninvasive respiratory monitoring
T Dinh, HP Phan, TK Nguyen, A Qamar, P Woodfield, Y Zhu, NT Nguyen, ...
Journal of Physics D: Applied Physics 50 (21), 215401, 2017
Nanoarchitectonics for wide bandgap semiconductor nanowires: Toward the next generation of nanoelectromechanical systems for environmental monitoring
TA Pham, A Qamar, T Dinh, MK Masud, M Rais‐Zadeh, DG Senesky, ...
Advanced Science 7 (21), 2001294, 2020
Piezoresistive effect of p-type single crystalline 3C–SiC on (111) plane
DV Dao, HP Phan, A Qamar, T Dinh
RSC advances 6 (26), 21302-21307, 2016
The piezoresistive effect in top–down fabricated p-type 3C-SiC nanowires
HP Phan, T Dinh, T Kozeki, TK Nguyen, A Qamar, T Namazu, NT Nguyen, ...
IEEE Electron Device Letters 37 (8), 1029-1032, 2016
Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature
T Dinh, DV Dao, HP Phan, L Wang, A Qamar, NT Nguyen, P Tanner, ...
Applied Physics Express 8 (6), 061303, 2015
Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching
HP Phan, T Kozeki, T Dinh, T Fujii, A Qamar, Y Zhu, T Namazu, ...
RSC advances 5 (100), 82121-82126, 2015
A versatile sacrificial layer for transfer printing of wide bandgap materials for implantable and stretchable bioelectronics
TA Pham, TK Nguyen, RK Vadivelu, T Dinh, A Qamar, S Yadav, ...
Advanced Functional Materials 30 (43), 2004655, 2020
Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects
HP Phan, T Dinh, T Kozeki, TK Nguyen, A Qamar, T Namazu, NT Nguyen, ...
Applied Physics Letters 109 (12), 2016
Thermoresistive properties of p-type 3C–SiC nanoscale thin films for high-temperature MEMS thermal-based sensors
T Dinh, HP Phan, T Kozeki, A Qamar, T Namazu, NT Nguyen, DV Dao
RSC advances 5 (128), 106083-106086, 2015
The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films
D VietáDao
Journal of Materials Chemistry C 3 (6), 1172-1176, 2015
Electrical properties of p-type 3C-SiC/Si heterojunction diode under mechanical stress
A Qamar, P Tanner, DV Dao, HP Phan, T Dinh
IEEE Electron Device Letters 35 (12), 1293-1295, 2014
Self-sensing paper-based actuators employing ferromagnetic nanoparticles and graphite
HP Phan, T Dinh, TK Nguyen, A Vatani, AR Md Foisal, A Qamar, ...
Applied Physics Letters 110 (14), 2017
High thermosensitivity of silicon nanowires induced by amorphization
T Dinh, HP Phan, T Kozeki, A Qamar, T Fujii, T Namazu, NT Nguyen, ...
Materials Letters 177, 80-84, 2016
Flexible and multifunctional electronics fabricated by a solvent-free and user-friendly method
T Dinh, HP Phan, A Qamar, NT Nguyen, DV Dao
RSC advances 6 (81), 77267-77274, 2016
The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC (100) four terminal devices
A Qamar, HP Phan, J Han, P Tanner, T Dinh, L Wang, S Dimitrijev, ...
Journal of Materials Chemistry C 3 (34), 8804-8809, 2015
Coupled baw/saw resonators using AlN/Mo/Si and AlN/Mo/GaN layered structures
A Qamar, M Rais-Zadeh
IEEE Electron Device Letters 40 (2), 321-324, 2019
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