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Francesco Maria Puglisi
Francesco Maria Puglisi
Associate Professor of Electronics, Università di Modena e Reggio Emilia
Verified email at unimore.it
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Year
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
3652019
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
2032017
Advances in non-volatile memory and storage technology
Y Nishi, B Magyari-Kope
Woodhead Publishing, 2019
1012019
A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State
FM Puglisi, L Larcher, A Padovani, P Pavan
IEEE Transactions on Electron Devices 62 (8), 2606-2613, 2015
902015
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
L Larcher, FM Puglisi, P Pavan, A Padovani, L Vandelli, G Bersuker
IEEE Transactions on Electron Devices 61 (8), 2668-2673, 2014
772014
An empirical model for RRAM resistance in low-and high-resistance states
FM Puglisi, L Larcher, G Bersuker, A Padovani, P Pavan
IEEE Electron Device Letters 34 (3), 387-389, 2013
742013
RTS noise characterization of HfOx RRAM in high resistive state
FM Puglisi, P Pavan, A Padovani, L Larcher, G Bersuker
Solid-State Electronics 84, 160-166, 2013
532013
Random telegraph noise in resistive random access memories: Compact modeling and advanced circuit design
FM Puglisi, N Zagni, L Larcher, P Pavan
IEEE Transactions on Electron Devices 65 (7), 2964-2972, 2018
522018
2D h-BN based RRAM devices
FM Puglisi, L Larcher, C Pan, N Xiao, Y Shi, F Hui, M Lanza
2016 IEEE International Electron Devices Meeting (IEDM), 34.8. 1-34.8. 4, 2016
442016
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM
FM Puglisi, P Pavan
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International …, 2013
422013
Factorial hidden Markov model analysis of random telegraph noise in resistive random access memories
FM Puglisi, P Pavan
ECTI Transactions on Electrical Engineering, Electronics, and Communications …, 2014
392014
Random telegraph signal noise properties of HfOx RRAM in high resistive state
FM Puglisi, P Pavan, A Padovani, L Larcher, G Bersuker
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
382012
Bipolar Resistive RAM Based on : Physics, Compact Modeling, and Variability Control
FM Puglisi, L Larcher, A Padovani, P Pavan
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016
372016
A microscopic physical description of RTN current fluctuations in HfOx RRAM
FM Puglisi, P Pavan, L Vandelli, A Padovani, M Bertocchi, L Larcher
2015 IEEE International Reliability Physics Symposium, 5B. 5.1-5B. 5.6, 2015
322015
A compact model of hafnium-oxide-based resistive random access memory
FM Puglisi, P Pavan, A Padovani, L Larcher
Proceedings of 2013 International Conference on IC Design & Technology …, 2013
322013
Temperature Impact on the Reset Operation in HfO2 RRAM
FM Puglisi, A Qafa, P Pavan
IEEE Electron Device Letters 36 (3), 244-246, 2015
312015
Advanced Data Encryption using 2D Materials
C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ...
Advanced Materials 33 (27), 2100185, 2021
292021
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM
FM Puglisi, C Wenger, P Pavan
IEEE Electron Device Letters 36 (10), 1030-1032, 2015
292015
Smart logic-in-memory architecture for low-power non-von neumann computing
T Zanotti, FM Puglisi, P Pavan
IEEE Journal of the Electron Devices Society 8, 757-764, 2020
282020
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability
FM Puglisi, L Larcher, P Pavan, A Padovani, G Bersuker
2014 IEEE International Reliability Physics Symposium, MY. 5.1-MY. 5.5, 2014
262014
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