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Umesh Mishra
Umesh Mishra
Verified email at ece.ucsb.edu
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Cited by
Year
AlGaN/GaN HEMTs-an overview of device operation and applications
UK Mishra, P Parikh, YF Wu
Proceedings of the IEEE 90 (6), 1022-1031, 2002
25082002
GaN-based RF power devices and amplifiers
UK Mishra, L Shen, TE Kazior, YF Wu
Proceedings of the IEEE 96 (2), 287-305, 2008
19592008
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
R Vetury, NQ Zhang, S Keller, UK Mishra
IEEE Transactions on Electron Devices 48 (3), 560-566, 2001
17462001
30-W/mm GaN HEMTs by field plate optimization
YF Wu, A Saxler, M Moore, RP Smith, S Sheppard, PM Chavarkar, ...
IEEE Electron Device Letters 25 (3), 117-119, 2004
13972004
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra
Applied Physics Letters 77 (2), 250-252, 2000
13732000
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
11142018
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey Jr, BP Keller, ...
Applied Physics Letters 71 (18), 2572-2574, 1997
9271997
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
YH Cho, GH Gainer, AJ Fischer, JJ Song, S Keller, UK Mishra, ...
Applied Physics Letters 73 (10), 1370-1372, 1998
8651998
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
838*2006
Very-high power density AlGaN/GaN HEMTs
YF Wu, D Kapolnek, JP Ibbetson, P Parikh, BP Keller, UK Mishra
IEEE Transactions on Electron Devices 48 (3), 586-590, 2001
7782001
AlGaN/AlN/GaN high-power microwave HEMT
L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ...
IEEE Electron Device Letters 22 (10), 457-459, 2001
6022001
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ...
Journal of applied physics 86 (8), 4520-4526, 1999
5931999
High-power AlGaN/GaN HEMTs for ka-band applications
T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron device letters 26 (11), 781-783, 2005
5842005
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
SF Chichibu, AC Abare, MS Minsky, S Keller, SB Fleischer, JE Bowers, ...
Applied Physics Letters 73 (14), 2006-2008, 1998
5741998
High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates
Y Dora, A Chakraborty, L Mccarthy, S Keller, SP DenBaars, UK Mishra
IEEE Electron Device Letters 27 (9), 713-715, 2006
5472006
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
S Karmalkar, UK Mishra
IEEE transactions on electron devices 48 (8), 1515-1521, 2001
5342001
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra
Applied Physics Letters 93 (14), 2008
5292008
AlGaN/GaN high electron mobility transistors with InGaN back-barriers
T Palacios, A Chakraborty, S Heikman, S Keller, SP DenBaars, UK Mishra
IEEE Electron device letters 27 (1), 13-15, 2005
4842005
Electrical characterization of GaN junctions with and without threading dislocations
P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ...
Applied physics letters 73 (7), 975-977, 1998
4821998
Semiconductor device physics and design
UK Mishra, J Singh
Springer, 2008
4812008
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