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Vipul Chaudhary
Vipul Chaudhary
Department of Electrical Engineering, Indian Institute of Technology Bombay
Verified email at iitb.ac.in
Title
Cited by
Cited by
Year
HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation
K Joshi, S Hung, S Mukhopadhyay, V Chaudhary, N Nanaware, ...
2013 IEEE international reliability physics symposium (IRPS), 4C. 2.1-4C. 2.10, 2013
642013
Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs
S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ...
2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014
412014
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Articles 1–2