Krishna Saraswat
Krishna Saraswat
Professor of Electrical Engineering, Stanford University
Verified email at stanford.edu - Homepage
Title
Cited by
Cited by
Year
3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
K Banerjee, SJ Souri, P Kapur, KC Saraswat
Proceedings of the IEEE 89 (5), 602-633, 2001
12412001
Interconnect limits on gigascale integration (GSI) in the 21st century
JA Davis, R Venkatesan, A Kaloyeros, M Beylansky, SJ Souri, K Banerjee, ...
Proceedings of the IEEE 89 (3), 305-324, 2001
8272001
Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna
L Tang, SE Kocabas, S Latif, AK Okyay, DS Ly-Gagnon, KC Saraswat, ...
Nature Photonics 2 (4), 226-229, 2008
7432008
Germanium nanowire field-effect transistors with and high-κ gate dielectrics
D Wang, Q Wang, A Javey, R Tu, H Dai, H Kim, PC McIntyre, ...
Applied Physics Letters 83 (12), 2432-2434, 2003
5982003
Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and≪ 60mV/dec subthreshold slope
T Krishnamohan, D Kim, S Raghunathan, K Saraswat
2008 IEEE International Electron Devices Meeting, 1-3, 2008
5812008
Dopant segregation in polycrystalline silicon
MM Mandurah, KC Saraswat, CR Helms, TI Kamins
Journal of Applied Physics 51 (11), 5755-5763, 1980
4901980
Effect of scaling of interconnections on the time delay of VLSI circuits
KC Saraswat, F Mohammadi
IEEE Transactions on Electron Devices 29 (4), 645-650, 1982
4731982
Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides
DB Kao, JP Mcvittie, WD Nix, KC Saraswat
IEEE transactions on electron devices 35 (1), 25-37, 1988
4441988
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
4242008
Germanium MOS capacitors incorporating ultrathin high-/spl kappa/gate dielectric
CO Chui, S Ramanathan, BB Triplett, PC McIntyre, KC Saraswat
IEEE Electron Device Letters 23 (8), 473-475, 2002
4212002
Three-dimensional integration of nanotechnologies for computing and data storage on a single chip
MM Shulaker, G Hills, RS Park, RT Howe, K Saraswat, HSP Wong, S Mitra
Nature 547 (7661), 74-78, 2017
3922017
Achieving direct band gap in germanium through integration of Sn alloying and external strain
S Gupta, B Magyari-Köpe, Y Nishi, KC Saraswat
Journal of Applied Physics 113 (7), 073707, 2013
3922013
Photodetectors and Photoreceivers-Long Wavelength Resonant Cavity Photodetector Based on InP/Air-Gap Bragg Reflectors
H Huang, Y Huang, X Wang, Q Wang, X Ren
IEEE Photonics Technology Letters 16 (1), 245-247, 2004
380*2004
Activation and diffusion studies of ion-implanted and dopants in germanium
CO Chui, K Gopalakrishnan, PB Griffin, JD Plummer, KC Saraswat
Applied physics letters 83 (16), 3275-3277, 2003
3702003
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
CD English, G Shine, VE Dorgan, KC Saraswat, E Pop
Nano letters 16 (6), 3824-3830, 2016
3482016
Thermal/microwave remote plasma multiprocessing reactor and method of use
MM Moslehi, KC Saraswat
US Patent 4,913,929, 1990
3301990
Electrical and materials properties of gate dielectrics grown by atomic layer chemical vapor deposition
CM Perkins, BB Triplett, PC McIntyre, KC Saraswat, S Haukka, ...
Applied Physics Letters 78 (16), 2357-2359, 2001
3122001
A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/dielectric and metal gate
CO Chui, H Kim, D Chi, BB Triplett, PC Mcintyre, KC Saraswat
Digest. International Electron Devices Meeting,, 437-440, 2002
3102002
Two-dimensional thermal oxidation of silicon—I. Experiments
DB Kao, JP McVittie, WD Nix, KC Saraswat
IEEE Transactions on Electron Devices 34 (5), 1008-1017, 1987
2981987
The effect of fluorine in silicon dioxide gate dielectrics
PJ Wright, KC Saraswat
IEEE Transactions on Electron Devices 36 (5), 879-889, 1989
2971989
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Articles 1–20