| 3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration K Banerjee, SJ Souri, P Kapur, KC Saraswat Proceedings of the IEEE 89 (5), 602-633, 2001 | 1177 | 2001 |
| Interconnect limits on gigascale integration (GSI) in the 21st century JA Davis, R Venkatesan, A Kaloyeros, M Beylansky, SJ Souri, K Banerjee, ... Proceedings of the IEEE 89 (3), 305-324, 2001 | 748 | 2001 |
| Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna L Tang, SE Kocabas, S Latif, AK Okyay, DS Ly-Gagnon, KC Saraswat, ... Nature Photonics 2 (4), 226-229, 2008 | 711 | 2008 |
| Germanium nanowire field-effect transistors with and high-κ gate dielectrics D Wang, Q Wang, A Javey, R Tu, H Dai, H Kim, PC McIntyre, ... Applied Physics Letters 83 (12), 2432-2434, 2003 | 575 | 2003 |
| Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and≪ 60mV/dec subthreshold slope T Krishnamohan, D Kim, S Raghunathan, K Saraswat 2008 IEEE International Electron Devices Meeting, 1-3, 2008 | 537 | 2008 |
| Dopant segregation in polycrystalline silicon MM Mandurah, KC Saraswat, CR Helms, TI Kamins Journal of applied physics 51 (11), 5755-5763, 1980 | 471 | 1980 |
| Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides DB Kao, JP Mcvittie, WD Nix, KC Saraswat IEEE transactions on electron devices 35 (1), 25-37, 1988 | 424 | 1988 |
| Effect of scaling of interconnections on the time delay of VLSI circuits KC Saraswat, F Mohammadi IEEE Transactions on Electron Devices 29 (4), 645-650, 1982 | 420 | 1982 |
| Germanium MOS capacitors incorporating ultrathin high-/spl kappa/gate dielectric CO Chui, S Ramanathan, BB Triplett, PC McIntyre, KC Saraswat IEEE Electron Device Letters 23 (8), 473-475, 2002 | 419 | 2002 |
| On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ... IEEE Transactions on Electron Devices 55 (2), 547-556, 2008 | 409 | 2008 |
| Activation and diffusion studies of ion-implanted and dopants in germanium CO Chui, K Gopalakrishnan, PB Griffin, JD Plummer, KC Saraswat Applied physics letters 83 (16), 3275-3277, 2003 | 355 | 2003 |
| Achieving direct band gap in germanium through integration of Sn alloying and external strain S Gupta, B Magyari-Köpe, Y Nishi, KC Saraswat Journal of Applied Physics 113 (7), 073707, 2013 | 349 | 2013 |
| Thermal/microwave remote plasma multiprocessing reactor and method of use MM Moslehi, KC Saraswat US Patent 4,913,929, 1990 | 314 | 1990 |
| Photodetectors and Photoreceivers-Long Wavelength Resonant Cavity Photodetector Based on InP/Air-Gap Bragg Reflectors H Huang, Y Huang, X Wang, Q Wang, X Ren IEEE Photonics Technology Letters 16 (1), 245-247, 2004 | 313* | 2004 |
| A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/dielectric and metal gate CO Chui, H Kim, D Chi, BB Triplett, PC McIntyre, KC Saraswat Digest. International Electron Devices Meeting,, 437-440, 2002 | 307 | 2002 |
| Electrical and materials properties of gate dielectrics grown by atomic layer chemical vapor deposition CM Perkins, BB Triplett, PC McIntyre, KC Saraswat, S Haukka, ... Applied Physics Letters 78 (16), 2357-2359, 2001 | 300 | 2001 |
| Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFTs for vertical integration applications V Subramanian, M Toita, NR Ibrahim, SJ Souri, KC Saraswat IEEE Electron Device Letters 20 (7), 341-343, 1999 | 292 | 1999 |
| Three-dimensional integration of nanotechnologies for computing and data storage on a single chip MM Shulaker, G Hills, RS Park, RT Howe, K Saraswat, HSP Wong, S Mitra Nature 547 (7661), 74-78, 2017 | 288 | 2017 |
| Two-dimensional thermal oxidation of silicon—I. Experiments DB Kao, JP McVittie, WD Nix, KC Saraswat IEEE Transactions on Electron Devices 34 (5), 1008-1017, 1987 | 287 | 1987 |
| The effect of fluorine in silicon dioxide gate dielectrics PJ Wright, KC Saraswat IEEE Transactions on Electron Devices 36 (5), 879-889, 1989 | 281 | 1989 |
