| Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition CH An, W Lee, SH Kim, CJ Cho, DG Kim, DS Kwon, ST Cho, SH Cha, ... physica status solidi (RRL)–Rapid Research Letters 13 (3), 1800454, 2019 | 28 | 2019 |
| Atomic layer deposition of Ru thin films using (2, 4-dimethyloxopentadienyl)(ethylcyclopentadienyl) Ru and the effect of ammonia treatment during the deposition DS Kwon, CH An, SH Kim, DG Kim, J Lim, W Jeon, CS Hwang Journal of Materials Chemistry C 8 (21), 6993-7004, 2020 | 21 | 2020 |
| Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random … SH Kim, W Lee, CH An, DS Kwon, DG Kim, SH Cha, ST Cho, CS Hwang ACS Applied Materials & Interfaces 10 (48), 41544-41551, 2018 | 16 | 2018 |
| Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3‐Based Dielectric for Further Scaling of Dynamic Random Access Memory SH Cha, CH An, ST Cho, DG Kim, DS Kwon, JI Lim, W Jeon, CS Hwang physica status solidi (RRL)–Rapid Research Letters 13 (10), 1900282, 2019 | 12 | 2019 |
| Leakage Current Control of SrTiO3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition SH Kim, W Lee, CH An, Y Kim, DS Kwon, DG Kim, SH Cha, ST Cho, J Lim, ... physica status solidi (RRL)–Rapid Research Letters 13 (11), 1900373, 2019 | 8 | 2019 |
| Substrate Effects on the Growth Behavior of Atomic-Layer-Deposited Ru Thin Films Using RuO4 Precursor and N2/H2 Mixed Gas CH An, W Jeon, SH Kim, CJ Cho, DS Kwon, DG Kim, W Lee, CS Hwang The Journal of Physical Chemistry C 123 (36), 22539-22549, 2019 | 8 | 2019 |
| Improved properties of the atomic layer deposited Ru electrode for dynamic random-access memory capacitor using discrete feeding method DS Kwon, W Jeon, DG Kim, TK Kim, H Seo, J Lim, CS Hwang ACS applied materials & interfaces 13 (20), 23915-23927, 2021 | 7 | 2021 |
| Optimized Al-doped TiO 2 gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate DG Kim, CH An, SH Kim, DS Kwon, J Lim, W Jeon, CS Hwang Journal of Materials Chemistry C 9 (5), 1572-1583, 2021 | 7 | 2021 |
| The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors H Seo, IW Yeu, DS Kwon, DG Kim, J Lim, TK Kim, H Paik, JH Choi, ... Advanced Electronic Materials 8 (7), 2200099, 2022 | 5 | 2022 |
| Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO3 Thin Films SH Kim, W Lee, CH An, DG Kim, DS Kwon, ST Cho, SH Cha, JI Lim, ... physica status solidi (RRL)–Rapid Research Letters 13 (5), 1800557, 2019 | 5 | 2019 |
| Enhanced Electrical Properties of an Al-Doped TiO2 Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer DS Kwon, TK Kim, J Lim, H Seo, H Paik, CS Hwang ACS Applied Electronic Materials 4 (4), 2005-2014, 2022 | 3 | 2022 |
| Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates DG Kim, DS Kwon, J Lim, H Seo, TK Kim, W Lee, CS Hwang Advanced Electronic Materials 7 (2), 2000819, 2021 | 2 | 2021 |
| Electrical and Structural Properties of ZrO2/Y2O3/ZrO2 Dielectric Film for DRAM Capacitor ST Cho, CH An, SH Kim, DG Kim, DS Kwon, SH Cha, CS Hwang Electrochemical Society Meeting Abstracts 233, 2524-2524, 2018 | 2 | 2018 |
| Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution J Lim, KH Ye, DS Kwon, H Seo, TK Kim, H Paik, JH Shin, H Song, ... ACS Applied Electronic Materials 5 (8), 4187-4197, 2023 | 1 | 2023 |
| Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate DG Kim, HR Kim, DS Kwon, J Lim, H Seo, TK Kim, H Paik, W Lee, ... Journal of Physics D: Applied Physics 54 (18), 185110, 2021 | 1 | 2021 |
| Atomic layer deposition(ALD) of Ru thin film on Ta2O5/Si substrate using RuO4 precursor and H2 gas CH An, SH Kim, DS Kwon, SH Cha, ST Cho, CS Hwang 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM …, 2018 | 1 | 2018 |
| Understanding phase evolution of ferroelectric Hf 0.5 Zr 0.5 O 2 thin films with Al 2 O 3 and Y 2 O 3 inserted layers J Shin, H Seo, KH Ye, YH Jang, DS Kwon, J Lim, TK Kim, H Paik, H Song, ... Journal of Materials Chemistry C 12 (14), 5035-5046, 2024 | | 2024 |
| Improved electrical performance of ultra-thin Be x Mg 1− x O films using super-cycle atomic layer deposition H Song, B Wang, J Shin, YK Park, TK Kim, H Paik, H Seo, J Lim, D Kwon, ... Journal of Materials Chemistry C 12 (8), 2714-2722, 2024 | | 2024 |
| Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconate MI Popovici, J Bizindavyi, G De, DS Kwon, GS Kar, J Van Houdt ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023 | | 2023 |
| Improving the Properties of SrRuO3 Electrode Films Grown by Atomic Layer-Deposited SrO and Pulsed Chemical Vapor-Deposited RuO2 Using Al2O3 Capping … J Lim, DS Kwon, H Seo, TK Kim, H Paik, J Shin, H Song, YH Jang, Y Park, ... ACS Applied Electronic Materials 5 (8), 4494-4503, 2023 | | 2023 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityVerified email at snu.ac.kr
