| On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's M Denais, C Parthasarathy, G Ribes, Y Rey-Tauriac, N Revil, A Bravaix, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 313 | 2004 |
| Hot-carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature A Bravaix, C Guérin, V Huard, D Roy, JM Roux, E Vincent 2009 IEEE International Reliability Physics Symposium, 531-548, 2009 | 235 | 2009 |
| A thorough investigation of MOSFETs NBTI degradation V Huard, M Denais, F Perrier, N Revil, C Parthasarathy, A Bravaix, ... Microelectronics Reliability 45 (1), 83-98, 2005 | 184 | 2005 |
| General framework about defect creation at the Si∕ SiO2 interface C Guérin, V Huard, A Bravaix Journal of Applied Physics 105 (11), 2009 | 156 | 2009 |
| Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide M Denais, V Huard, C Parthasarathy, G Ribes, F Perrier, N Revil, ... IEEE Transactions on Device and Materials Reliability 4 (4), 715-722, 2004 | 156 | 2004 |
| The energy-driven hot-carrier degradation modes of nMOSFETs C Guérin, V Huard, A Bravaix IEEE Transactions on Device and Materials Reliability 7 (2), 225-235, 2007 | 149 | 2007 |
| BTI variability fundamental understandings and impact on digital logic by the use of extensive dataset D Angot, V Huard, L Rahhal, A Cros, X Federspiel, A Bajolet, Y Carminati, ... 2013 IEEE International Electron Devices Meeting, 15.4. 1-15.4. 4, 2013 | 83 | 2013 |
| CMOS device design-in reliability approach in advanced nodes V Huard, CR Parthasarathy, A Bravaix, C Guerin, E Pion 2009 IEEE International Reliability Physics Symposium, 624-633, 2009 | 81 | 2009 |
| Ultra-thin gate oxide reliability in the ESD time domain A Ille, W Stadler, A Kerber, T Pompl, T Brodbeck, K Esmark, A Bravaix 2006 Electrical Overstress/Electrostatic Discharge Symposium, 285-294, 2006 | 63 | 2006 |
| Reliability aspects of gate oxide under ESD pulse stress A Ille, W Stadler, T Pompl, H Gossner, T Brodbeck, K Esmark, P Riess, ... 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007 | 62 | 2007 |
| Design-in-reliability approach for NBTI and hot-carrier degradations in advanced nodes V Huard, CR Parthasarathy, A Bravaix, T Hugel, C Guérin, E Vincent IEEE Transactions on Device and Materials Reliability 7 (4), 558-570, 2007 | 54 | 2007 |
| Microscopic scale characterization and modeling of transistor degradation under HC stress YM Randriamihaja, V Huard, X Federspiel, A Zaka, P Palestri, D Rideau, ... Microelectronics Reliability 52 (11), 2513-2520, 2012 | 53 | 2012 |
| Charging and discharging properties of electron traps created by hot‐carrier injections in gate oxide of n‐channel metal oxide semiconductor field effect transistor D Vuillaume, A Bravaix Journal of applied physics 73 (5), 2559-2563, 1993 | 48 | 1993 |
| Hot-carrier to cold-carrier device lifetime modeling with temperature for low power 40nm Si-bulk NMOS and PMOS FETs A Bravaix, V Huard, D Goguenheim, E Vincent 2011 International Electron Devices Meeting, 27.5. 1-27.5. 4, 2011 | 45 | 2011 |
| New insights into recovery characteristics post NBTI stress CR Parthasarathy, M Denais, V Huard, G Ribes, E Vincent, A Bravaix 2006 IEEE International Reliability Physics Symposium Proceedings, 471-477, 2006 | 43 | 2006 |
| Paradigm shift for NBTI characterization in ultra-scaled CMOS technologies M Denais, A Bravaix, V Huard, C Parthasarathy, C Guerin, G Ribes, ... 2006 IEEE International Reliability Physics Symposium Proceedings, 735-736, 2006 | 42 | 2006 |
| Microelectron. Reliab V Huard, M Denais, F Perrier, N Revil, C Parthasarathy, A Bravaix, ... | 41 | 2005 |
| Designing in reliability in advanced CMOS technologies CR Parthasarathy, M Denais, V Huard, G Ribes, D Roy, C Guérin, ... Microelectronics Reliability 46 (9-11), 1464-1471, 2006 | 40 | 2006 |
| New hot carrier degradation modeling reconsidering the role of EES in ultra short n-channel MOSFETs YM Randriamihaja, X Federspiel, V Huard, A Bravaix, P Palestri 2013 IEEE International Reliability Physics Symposium (IRPS), XT. 1.1-XT. 1.5, 2013 | 39 | 2013 |
| Energy-driven hot-carrier model in advanced nodes W Arfaoui, X Federspiel, P Mora, F Monsieur, F Cacho, D Roy, A Bravaix 2014 IEEE International Reliability Physics Symposium, XT. 12.1-XT. 12.5, 2014 | 38 | 2014 |
