Scott Dunham
Scott Dunham
Verified email at ee.washington.edu
Title
Cited by
Cited by
Year
First-principles study of boron diffusion in silicon
W Windl, MM Bunea, R Stumpf, ST Dunham, MP Masquelier
Physical review letters 83 (21), 4345, 1999
2521999
A universal scaling of planar fault energy barriers in face-centered cubic metals
ZH Jin, ST Dunham, H Gleiter, H Hahn, P Gumbsch
Scripta Materialia 64 (7), 605-608, 2011
1032011
A quantitative model for the coupled diffusion of phosphorus and point defects in silicon
ST Dunham
Journal of the Electrochemical Society 139 (9), 2628, 1992
1011992
Point‐defect generation during oxidation of silicon in dry oxygen. I. Theory
ST Dunham, JD Plummer
Journal of applied physics 59 (7), 2541-2550, 1986
971986
Atomistic models of vacancy‐mediated diffusion in silicon
ST Dunham, CD Wu
Journal of applied physics 78 (4), 2362-2366, 1995
921995
Point‐defect generation during oxidation of silicon in dry oxygen. II. Comparison to experiment
ST Dunham, JD Plummer
Journal of applied physics 59 (7), 2551-2561, 1986
691986
Consistent quantitative model for the spatial extent of point defect interactions in silicon
AM Agarwal, ST Dunham
Journal of applied physics 78 (9), 5313-5319, 1995
681995
Interactions of silicon point defects with SiO2 films
ST Dunham
Journal of applied physics 71 (2), 685-696, 1992
671992
Band bending and surface defects in β-Ga2O3
TC Lovejoy, R Chen, X Zheng, EG Villora, K Shimamura, H Yoshikawa, ...
Applied Physics Letters 100 (18), 181602, 2012
632012
Ab initio calculations to model anomalous fluorine behavior
M Diebel, ST Dunham
Physical review letters 93 (24), 245901, 2004
622004
Variation of Band Gap and Lattice Parameters of β−(AlxGa1−x)2O3 Powder Produced by Solution Combustion Synthesis
BW Krueger, CS Dandeneau, EM Nelson, ST Dunham, FS Ohuchi, ...
Journal of the American Ceramic Society 99 (7), 2467-2473, 2016
592016
Simulation of grain boundary effects on electronic transport in metals, and detailed causes of scattering
B Feldman, S Park, M Haverty, S Shankar, ST Dunham
physica status solidi (b) 247 (7), 1791-1796, 2010
542010
A predictive model for transient enhanced diffusion based on evolution of {311} defects
AH Gencer, ST Dunham
Journal of applied physics 81 (2), 631-636, 1997
541997
Modeling of the kinetics of dopant precipitation in silicon
ST Dunham
Journal of The Electrochemical Society 142 (8), 2823, 1995
351995
Diffusion of phosphorus in arsenic and boron doped silicon
F Wittel, S Dunham
Applied physics letters 66 (11), 1415-1417, 1995
351995
Interstitial kinetics near oxidizing silicon interfaces
ST Dunham
Journal of the Electrochemical Society 136 (1), 250, 1989
331989
Investigation and modeling of fluorine co-implantation effects on dopant redistribution
M Diebel, S Chakravarthi, ST Dunham, CF Machala, S Ekbote, A Jain
Materials Research Society Symposium Proceedings 765, 211-216, 2003
322003
A simple continuum model for boron clustering based on atomistic calculations
S Chakravarthi, ST Dunham
Journal of Applied Physics 89 (7), 3650-3655, 2001
312001
Moment expansion approach to calculate impact ionization rate in submicron silicon devices
K Sonoda, M Yamaji, K Taniguchi, C Hamaguchi, ST Dunham
Journal of applied physics 80 (9), 5444-5448, 1996
311996
A reduced moment‐based model for precipitation kinetics and application to dopant activation in silicon
I Clejan, ST Dunham
Journal of applied physics 78 (12), 7327-7333, 1995
311995
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