| First-principles study of boron diffusion in silicon W Windl, MM Bunea, R Stumpf, ST Dunham, MP Masquelier Physical review letters 83 (21), 4345, 1999 | 252 | 1999 |
| A universal scaling of planar fault energy barriers in face-centered cubic metals ZH Jin, ST Dunham, H Gleiter, H Hahn, P Gumbsch Scripta Materialia 64 (7), 605-608, 2011 | 103 | 2011 |
| A quantitative model for the coupled diffusion of phosphorus and point defects in silicon ST Dunham Journal of the Electrochemical Society 139 (9), 2628, 1992 | 101 | 1992 |
| Point‐defect generation during oxidation of silicon in dry oxygen. I. Theory ST Dunham, JD Plummer Journal of applied physics 59 (7), 2541-2550, 1986 | 97 | 1986 |
| Atomistic models of vacancy‐mediated diffusion in silicon ST Dunham, CD Wu Journal of applied physics 78 (4), 2362-2366, 1995 | 92 | 1995 |
| Point‐defect generation during oxidation of silicon in dry oxygen. II. Comparison to experiment ST Dunham, JD Plummer Journal of applied physics 59 (7), 2551-2561, 1986 | 69 | 1986 |
| Consistent quantitative model for the spatial extent of point defect interactions in silicon AM Agarwal, ST Dunham Journal of applied physics 78 (9), 5313-5319, 1995 | 68 | 1995 |
| Interactions of silicon point defects with SiO2 films ST Dunham Journal of applied physics 71 (2), 685-696, 1992 | 67 | 1992 |
| Band bending and surface defects in β-Ga2O3 TC Lovejoy, R Chen, X Zheng, EG Villora, K Shimamura, H Yoshikawa, ... Applied Physics Letters 100 (18), 181602, 2012 | 63 | 2012 |
| Ab initio calculations to model anomalous fluorine behavior M Diebel, ST Dunham Physical review letters 93 (24), 245901, 2004 | 62 | 2004 |
| Variation of Band Gap and Lattice Parameters of β−(AlxGa1−x)2O3 Powder Produced by Solution Combustion Synthesis BW Krueger, CS Dandeneau, EM Nelson, ST Dunham, FS Ohuchi, ... Journal of the American Ceramic Society 99 (7), 2467-2473, 2016 | 59 | 2016 |
| Simulation of grain boundary effects on electronic transport in metals, and detailed causes of scattering B Feldman, S Park, M Haverty, S Shankar, ST Dunham physica status solidi (b) 247 (7), 1791-1796, 2010 | 54 | 2010 |
| A predictive model for transient enhanced diffusion based on evolution of {311} defects AH Gencer, ST Dunham Journal of applied physics 81 (2), 631-636, 1997 | 54 | 1997 |
| Modeling of the kinetics of dopant precipitation in silicon ST Dunham Journal of The Electrochemical Society 142 (8), 2823, 1995 | 35 | 1995 |
| Diffusion of phosphorus in arsenic and boron doped silicon F Wittel, S Dunham Applied physics letters 66 (11), 1415-1417, 1995 | 35 | 1995 |
| Interstitial kinetics near oxidizing silicon interfaces ST Dunham Journal of the Electrochemical Society 136 (1), 250, 1989 | 33 | 1989 |
| Investigation and modeling of fluorine co-implantation effects on dopant redistribution M Diebel, S Chakravarthi, ST Dunham, CF Machala, S Ekbote, A Jain Materials Research Society Symposium Proceedings 765, 211-216, 2003 | 32 | 2003 |
| A simple continuum model for boron clustering based on atomistic calculations S Chakravarthi, ST Dunham Journal of Applied Physics 89 (7), 3650-3655, 2001 | 31 | 2001 |
| Moment expansion approach to calculate impact ionization rate in submicron silicon devices K Sonoda, M Yamaji, K Taniguchi, C Hamaguchi, ST Dunham Journal of applied physics 80 (9), 5444-5448, 1996 | 31 | 1996 |
| A reduced moment‐based model for precipitation kinetics and application to dopant activation in silicon I Clejan, ST Dunham Journal of applied physics 78 (12), 7327-7333, 1995 | 31 | 1995 |
