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Giovanni Alfieri
Giovanni Alfieri
Hitachi Energy
Verified email at hitachienergy.com
Title
Cited by
Cited by
Year
Iron and intrinsic deep level states in Ga2O3
ME Ingebrigtsen, JB Varley, AY Kuznetsov, BG Svensson, G Alfieri, ...
Applied Physics Letters 112 (4), 2018
2522018
Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ...
Apl Materials 7 (2), 2019
191*2019
Annealing behavior between room temperature and 2000 C of deep level defects in electron-irradiated n-type 4H silicon carbide
G Alfieri, EV Monakhov, BG Svensson, MK Linnarsson
Journal of applied physics 98 (4), 2005
1422005
Electrically active defects in irradiated 4H-SiC
ML David, G Alfieri, EM Monakhov, A Hallén, C Blanchard, BG Svensson, ...
Journal of applied physics 95 (9), 4728-4733, 2004
932004
Detection and depth analyses of deep levels generated by ion implantation in n-and p-type 4H-SiC
K Kawahara, G Alfieri, T Kimoto
Journal of Applied Physics 106 (1), 2009
902009
Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon
M Mikelsen, EV Monakhov, G Alfieri, BS Avset, BG Svensson
Physical Review B 72 (19), 195207, 2005
852005
Evidence for identification of the divacancy-oxygen center in Si
G Alfieri, EV Monakhov, BS Avset, BG Svensson
Physical Review B 68 (23), 233202, 2003
672003
Development of radiation tolerant semiconductor detectors for the Super-LHC
M Moll, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
642005
Radiation-hard semiconductor detectors for SuperLHC
M Bruzzi, J Adey, A Al-Ajili, P Alexandrov, G Alfieri, PP Allport, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
642005
Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide
G Alfieri, EV Monakhov, BG Svensson, A Hallén
Journal of applied physics 98 (11), 2005
562005
Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC
S Sasaki, K Kawahara, G Feng, G Alfieri, T Kimoto
Journal of Applied Physics 109 (1), 2011
512011
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC
E Fretwurst, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
482005
Bistable defect in mega-electron-volt proton implanted 4H silicon carbide
DM Martin, H Kortegaard Nielsen, P Leveque, A Hallén, G Alfieri, ...
Applied physics letters 84 (10), 1704-1706, 2004
442004
Engineering the band gap of SiC nanotubes with a transverse electric field
G Alfieri, T Kimoto
Applied Physics Letters 97 (4), 2010
432010
Divacancy annealing in Si: Influence of hydrogen
EV Monakhov, A Ulyashin, G Alfieri, AY Kuznetsov, BS Avset, ...
Physical Review B 69 (15), 153202, 2004
362004
Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy
G Alfieri, T Kimoto
Applied Physics Letters 102 (15), 2013
352013
Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC
G Alfieri, T Kimoto
Journal of Applied Physics 112, 063717, 2012
342012
Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects
ME Ingebrigtsen, L Vines, G Alfieri, A Mihaila, U Badstübner, ...
Materials Science Forum 897, 755-758, 2017
292017
The structural and electronic properties of chiral SiC nanotubes: a hybrid density functional study
G Alfieri, T Kimoto
Nanotechnology 20 (28), 285703, 2009
242009
About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C
R Nipoti, A Carnera, G Alfieri, L Kranz
Materials Science Forum 924, 333-338, 2018
222018
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