| Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation D Ielmini, S Lavizzari, D Sharma, AL Lacaita 2007 IEEE International Electron Devices Meeting, 939-942, 2007 | 201 | 2007 |
| Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells—Part I: Experimental study D Ielmini, D Sharma, S Lavizzari, AL Lacaita IEEE Transactions on Electron Devices 56 (5), 1070-1077, 2009 | 191 | 2009 |
| Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018 | 128 | 2018 |
| Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5 D Ielmini, S Lavizzari, D Sharma, AL Lacaita Applied Physics Letters 92 (19), 2008 | 106 | 2008 |
| Statistics of resistance drift due to structural relaxation in phase-change memory arrays M Boniardi, D Ielmini, S Lavizzari, AL Lacaita, A Redaelli, A Pirovano IEEE Transactions on Electron Devices 57 (10), 2690-2696, 2010 | 98 | 2010 |
| Understanding ferroelectric Al: HfO2 thin films with Si-based electrodes for 3D applications K Florent, S Lavizzari, M Popovici, L Di Piazza, U Celano, G Groeseneken, ... Journal of Applied Physics 121 (20), 2017 | 80 | 2017 |
| Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells—Part II: Physics-based modeling S Lavizzari, D Ielmini, D Sharma, AL Lacaita IEEE Transactions on Electron Devices 56 (5), 1078-1085, 2009 | 77 | 2009 |
| First demonstration of vertically stacked ferroelectric Al doped HfO2devices for NAND applications K Florent, S Lavizzari, L Di Piazza, M Popovici, E Vecchio, G Potoms, ... 2017 Symposium on VLSI Technology, T158-T159, 2017 | 72 | 2017 |
| Reliability Study of Ferroelectric Al:HfO2Thin Films for DRAM and NAND Applications K Florent, S Lavizzari, L Di Piazza, M Popovici, J Duan, G Groeseneken, ... IEEE Transactions on Electron Devices 64 (10), 4091-4098, 2017 | 71 | 2017 |
| Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices D Fugazza, D Ielmini, S Lavizzari, AL Lacaita 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 63 | 2009 |
| Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells D Ielmini, D Sharma, S Lavizzari, AL Lacaita 2008 IEEE International Reliability Physics Symposium, 597-603, 2008 | 40 | 2008 |
| Threshold-Switching Delay Controlled by Current Fluctuations in Phase-Change Memory Devices S Lavizzari, D Sharma, D Ielmini IEEE transactions on electron devices 57 (5), 1047-1054, 2010 | 36 | 2010 |
| Investigation of the endurance of FE-HfO2 devices by means of TDDB studies K Florent, A Subirats, S Lavizzari, R Degraeve, U Celano, B Kaczer, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 3-1-6D. 3-7, 2018 | 33 | 2018 |
| Transient effects of delay, switching and recovery in phase change memory (PCM) devices S Lavizzari, D Ielmini, D Sharma, AL Lacaita 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 33 | 2008 |
| ELECTRON DEVICE LT Su, DA Antoniadis, ND Arora, BS Doyle, DB Krakauer, C Tedesco, ... | 33 | 2005 |
| Interface engineering for thermal disturb immune phase change memory technology A Redaelli, M Boniardi, A Ghetti, U Russo, C Cupeta, S Lavizzari, ... 2013 IEEE International Electron Devices Meeting, 30.4. 1-30.4. 4, 2013 | 30 | 2013 |
| Transient simulation of delay and switching effects in phase-change memories S Lavizzari, D Ielmini, AL Lacaita IEEE Transactions on Electron Devices 57 (12), 3257-3264, 2010 | 30 | 2010 |
| Random telegraph signal noise in phase change memory devices D Fugazza, D Ielmini, S Lavizzari, AL Lacaita 2010 IEEE International Reliability Physics Symposium, 743-749, 2010 | 29 | 2010 |
| A new transient model for recovery and relaxation oscillations in phase-change memories S Lavizzari, D Ielmini, AL Lacaita IEEE transactions on electron devices 57 (8), 1838-1845, 2010 | 28 | 2010 |
| Memory cells and integrated devices A Redaelli, U Russo, A Pirovano, S Lavizzari US Patent 8,723,155, 2014 | 27 | 2014 |
Daniele IelminiProfessor of ElectronicsVerified email at elet.polimi.it
