Improved refractive index formulas for the and alloys GM Laws, EC Larkins, I Harrison, C Molloy, D Somerford Journal of applied Physics 89 (2), 1108-1115, 2001 | 223 | 2001 |
Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers JD Ralston, S Weisser, I Esquivias, EC Larkins, J Rosenzweig, PJ Tasker, ... IEEE Journal of quantum electronics 29 (6), 1648-1659, 1993 | 220 | 1993 |
Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers S Weisser, EC Larkins, K Czotscher, W Benz, J Daleiden, I Esquivias, ... IEEE Photonics Technology Letters 8 (5), 608-610, 1996 | 124 | 1996 |
Nonlinear properties of tapered laser cavities S Sujecki, L Borruel, J Wykes, P Moreno, B Sumpf, P Sewell, H Wenzel, ... IEEE Journal of selected topics in quantum electronics 9 (3), 823-834, 2003 | 85 | 2003 |
Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells S Bürkner, M Maier, EC Larkins, W Rothemund, EP O’reilly, JD Ralston Journal of Electronic materials 24, 805-812, 1995 | 79 | 1995 |
Design and simulation of next-generation high-power, high-brightness laser diodes JJ Lim, S Sujecki, L Lang, Z Zhang, D Paboeuf, G Pauliat, G Lucas-Leclin, ... IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 993-1008, 2009 | 78 | 2009 |
Quasi-3-D simulation of high-brightness tapered lasers L Borruel, S Sujecki, P Moreno, J Wykes, M Krakowski, B Sumpf, P Sewell, ... IEEE journal of quantum electronics 40 (5), 463-472, 2004 | 73 | 2004 |
Bistable optical laser based on a heterostructure PNPN thyristor EC Larkins US Patent 5,349,599, 1994 | 73 | 1994 |
Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers JD Ralston, S Weisser, K Eisele, RE Sah, EC Larkins, J Rosenzweig, ... IEEE photonics technology letters 6 (9), 1076-1079, 1994 | 55 | 1994 |
Narrow-line coherently combined tapered laser diodes in a Talbot external cavity with a volume Bragg grating D Paboeuf, G Lucas-Leclin, P Georges, N Michel, M Krakowski, J Lim, ... Applied Physics Letters 93 (21), 2008 | 54 | 2008 |
Space‐charge effects in photovoltaic double barrier quantum well infrared detectors H Schneider, EC Larkins, JD Ralston, K Schwarz, F Fuchs, P Koidl Applied physics letters 63 (6), 782-784, 1993 | 53 | 1993 |
Efficient high-speed direct modulation in p-doped In0. 35 Ga0. 65As/GaAs multiquantum well lasers S Weisser, JD Ralston, EC Larkins, I Esquivias, PJ Tasker, J Fleissner, ... Electronics Letters 28 (23), 2141-2143, 1992 | 50 | 1992 |
Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars R Xia, EC Larkins, I Harrison, SRA Dods, A Andrianov, J Morgan, ... IEEE Photonics technology letters 14 (7), 893-895, 2002 | 48 | 2002 |
InGaAs/GaAs multiple-quantum-well modulators and switches A Stöhr, O Humbach, S Zumkley, G Wingen, G David, D Jäger, B Bollig, ... Optical and Quantum Electronics 25, S865-S883, 1993 | 47 | 1993 |
Design of wide-emitter single-mode laser diodes JJ Lim, TM Benson, EC Larkins IEEE journal of quantum electronics 41 (4), 506-516, 2005 | 41 | 2005 |
Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes AV Andrianov, SRA Dods, J Morgan, JW Orton, TM Benson, I Harrison, ... Journal of Applied Physics 87 (7), 3227-3233, 2000 | 40 | 2000 |
Influences of MBE growth processes on photovoltaic 3-5/spl mu/m intersubband photodetectors EC Larkins, H Schneider, S Ehret, J Fleissner, B Dischler, P Koidl, ... IEEE transactions on electron devices 41 (4), 511-518, 1994 | 40 | 1994 |
Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy EC Larkins, ES Hellman, DG Schlom, JS Harris Jr, MH Kim, GE Stillman Applied physics letters 49 (7), 391-393, 1986 | 31 | 1986 |
Influence of interdiffusion processes on optical and structural properties of pseudomorphic In0.35Ga0.65As/GaAs multiple quantum well structures S Bürkner, M Baeumler, J Wagner, EC Larkins, W Rothemund, JD Ralston Journal of applied physics 79 (9), 6818-6825, 1996 | 29 | 1996 |
Band offset determination of the GaAs/GaAsN interface using the density functional theory method HP Komsa, E Arola, E Larkins, TT Rantala Journal of Physics: Condensed Matter 20 (31), 315004, 2008 | 28 | 2008 |