Excellent passivation of highly doped -type Si surfaces by the negative-charge-dielectric B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ... Applied Physics Letters 91 (11), 112107, 2007 | 477 | 2007 |

Twenty‐four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss J Zhao, A Wang, P Altermatt, MA Green Applied Physics Letters 66 (26), 3636-3638, 1995 | 383 | 1995 |

Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon T Trupke, MA Green, P Würfel, PP Altermatt, A Wang, J Zhao, R Corkish Journal of Applied Physics 94 (8), 4930-4937, 2003 | 370 | 2003 |

Models for numerical device simulations of crystalline silicon solar cells—a review PP Altermatt Journal of computational electronics 10 (3), 314-330, 2011 | 310 | 2011 |

24% efficient perl silicon solar cell: recent improvements in high efficiency silicon cell research J Zhao, A Wang, PP Altermatt, SR Wenham, MA Green Solar energy materials and solar cells 41, 87-99, 1996 | 293 | 1996 |

Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing PP Altermatt, A Schenk, F Geelhaar, G Heiser Journal of Applied Physics 93 (3), 1598-1604, 2003 | 244 | 2003 |

A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si: P PP Altermatt, A Schenk, G Heiser Journal of Applied Physics 100 (11), 113715, 2006 | 228 | 2006 |

Numerical modeling of highly doped Si: P emitters based on Fermi–Dirac statistics and self-consistent material parameters PP Altermatt, JO Schumacher, A Cuevas, MJ Kerr, SW Glunz, RR King, ... Journal of Applied Physics 92 (6), 3187-3197, 2002 | 198 | 2002 |

Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling PP Altermatt, T Kiesewetter, K Ellmer, H Tributsch Solar energy materials and solar cells 71 (2), 181-195, 2002 | 189 | 2002 |

Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon PP Altermatt, J Schmidt, G Heiser, AG Aberle Journal of applied physics 82 (10), 4938-4944, 1997 | 182 | 1997 |

Input parameters for the simulation of silicon solar cells in 2014 A Fell, KR McIntosh, PP Altermatt, GJM Janssen, R Stangl, A Ho-Baillie, ... IEEE Journal of Photovoltaics 5 (4), 1250-1263, 2015 | 172 | 2015 |

Injection dependence of spontaneous radiative recombination in crystalline silicon: Experimental verification and theoretical analysis PP Altermatt, F Geelhaar, T Trupke, X Dai, A Neisser, E Daub Applied physics letters 88 (26), 261901, 2006 | 146 | 2006 |

Impurity-related limitations of next-generation industrial silicon solar cells J Schmidt, B Lim, D Walter, K Bothe, S Gatz, T Dullweber, PP Altermatt 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-5, 2012 | 127 | 2012 |

A freeware 1D emitter model for silicon solar cells KR McIntosh, PP Altermatt 2010 35th IEEE Photovoltaic Specialists Conference, 002188-002193, 2010 | 127 | 2010 |

24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design D Chen, Y Chen, Z Wang, J Gong, C Liu, Y Zou, Y He, Y Wang, L Yuan, ... Solar Energy Materials and Solar Cells 206, 110258, 2020 | 122 | 2020 |

Spatially resolved analysis and minimization of resistive losses in high‐efficiency Si solar cells PP Altermatt, G Heiser, AG Aberle, A Wang, J Zhao, SJ Robinson, ... Progress in photovoltaics: research and applications 4 (6), 399-414, 1996 | 116 | 1996 |

Limiting loss mechanisms in 23% efficient silicon solar cells AG Aberle, PP Altermatt, G Heiser, SJ Robinson, A Wang, J Zhao, ... Journal of Applied Physics 77 (7), 3491-3504, 1995 | 116 | 1995 |

Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W Y Chen, D Chen, C Liu, Z Wang, Y Zou, Y He, Y Wang, L Yuan, J Gong, ... Progress in Photovoltaics: Research and Applications 27 (10), 827-834, 2019 | 114 | 2019 |

Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation S Steingrube, O Breitenstein, K Ramspeck, S Glunz, A Schenk, ... Journal of Applied Physics 110 (1), 014515, 2011 | 108 | 2011 |

Advances in the surface passivation of silicon solar cells J Schmidt, F Werner, B Veith, D Zielke, S Steingrube, PP Altermatt, S Gatz, ... Energy Procedia 15, 30-39, 2012 | 104 | 2012 |