| Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs M Usman, CA Broderick, A Lindsay, EP O’Reilly Physical Review B 84 (24), 245202, 2011 | 265 | 2011 |
| Band engineering in dilute nitride and bismide semiconductor lasers CA Broderick, M Usman, SJ Sweeney, EP O’Reilly Semiconductor Science and Technology 27 (9), 094011, 2012 | 205 | 2012 |
| Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors O Moutanabbir, S Assali, X Gong, EP O'Reilly, CA Broderick, B Marzban, ... arXiv preprint arXiv:2101.03245, 2021 | 105 | 2021 |
| Impact of alloy disorder on the band structure of compressively strained GaBiAs M Usman, CA Broderick, Z Batool, K Hild, TJC Hosea, SJ Sweeney, ... Physical Review B 87 (11), 115104, 2013 | 92 | 2013 |
| Derivation of 12-and 14-band k.p Hamiltonians for dilute bismide and bismide-nitride semiconductors CA Broderick, M Usman, EP O'Reilly Semiconductor Science and Technology 28 (12), 125025, 2013 | 88 | 2013 |
| Optical gain in GaAsBi/GaAs quantum well diode lasers IP Marko, CA Broderick, S Jin, P Ludewig, W Stolz, K Volz, JM Rorison, ... Scientific Reports 6, 28863, 2016 | 77 | 2016 |
| Chapter 3: Theory of the electronic structure of dilute bismide alloys - tight-binding and k.p models CA Broderick, M Usman, EP O’Reilly Springer Series in Materials Science 186, 55, 2013 | 77* | 2013 |
| Progress on germanium-tin nanoscale alloys J Doherty, S Biswas, E Galluccio, CA Broderick, A Garcia-Gil, R Duffy, ... Chemistry of Materials 32 (11), 4383-4408, 2020 | 47 | 2020 |
| 12‐band k.p model for dilute bismide alloys of (In)GaAs derived from supercell calculations CA Broderick, M Usman, EP O'Reilly Physica Status Solidi B 250 (4), 773, 2013 | 43 | 2013 |
| Determination of type-I band offsets in GaBiAs quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations CA Broderick, PE Harnedy, P Ludewig, ZL Bushell, K Volz, RJ Manning, ... Semiconductor Science and Technology 30 (9), 094009, 2015 | 38 | 2015 |
| Anisotropic electron g factor as a probe of the electronic structure of GaBiAs/GaAs epilayers CA Broderick, S Mazzucato, H Carrère, T Amand, H Makhloufi, A Arnoult, ... Physical Review B 90 (19), 195301, 2014 | 36 | 2014 |
| Theory of the electronic and optical properties of dilute bismide quantum well lasers CA Broderick, PE Harnedy, EP O'Reilly IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 1503313, 2015 | 34 | 2015 |
| GaAsBi/GaNAs type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near-and mid-infrared photonics CA Broderick, S Jin, IP Marko, K Hild, P Ludewig, ZL Bushell, W Stolz, ... Scientific Reports 7, 46371, 2017 | 33 | 2017 |
| Comparison of first principles and semi-empirical models of the structural and electronic properties of GeSn alloys EJ O’Halloran, CA Broderick, DSP Tanner, S Schulz, EP O’Reilly Optical and Quantum Electronics 51 (9), 1-23, 2019 | 30 | 2019 |
| Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with GMT Chai, CA Broderick, EP O’Reilly, Z Othaman, SR Jin, JP Petropoulos, ... Semiconductor Science and Technology 30 (9), 094015, 2015 | 22 | 2015 |
| Impact of disorder on the optoelectronic properties of GaNAsBi alloys and heterostructures M Usman, CA Broderick, EP O’Reilly Physical Review Applied 10 (4), 044024, 2018 | 21 | 2018 |
| Theory and design of InGaAsBi mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μm on InP substrates CA Broderick, W Xiong, SJ Sweeney, EP O'Reilly, JM Rorison Semicond. Sci. Technol. 33, 094007, 2018 | 16 | 2018 |
| Giant bowing of the band gap and spin-orbit splitting energy in GaPBi dilute bismide alloys ZL Bushell, CA Broderick, L Nattermann, R Joseph, JL Keddie, ... Scientific Reports 9, 6835, 2019 | 15 | 2019 |
| Continuous-wave magneto-optical determination of the carrier lifetime in coherent GeSn/Ge heterostructures E Vitiello, S Rossi, CA Broderick, G Gravina, A Balocchi, X Marie, ... Physical Review Applied 14 (6), 064068, 2020 | 11 | 2020 |
| Optical properties of metamorphic type-I InAsSb/AlInAs quantum wells grown on GaAs for the mid-infrared spectral range E Repiso, CA Broderick, M de la Mata, R Arkani, Q Lu, ARJ Marshall, ... Journal of Physics D: Applied Physics 52 (46), 465102, 2019 | 11 | 2019 |
Eoin O'ReillyProfessor Emeritus, Tyndall National InstituteVerified email at tyndall.ie
