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Riikka Puurunen
Riikka Puurunen
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Title
Cited by
Cited by
Year
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
RL Puurunen
Journal of applied physics 97 (12), 9, 2005
34022005
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala, RL Puurunen
Journal of Applied Physics 113 (2), 2, 2013
16522013
Conformality in atomic layer deposition: Current status overview of analysis and modelling
V Cremers, RL Puurunen, J Dendooven
Applied Physics Reviews 6 (2), 021302, 2019
3872019
Island growth as a growth mode in atomic layer deposition: A phenomenological model
RL Puurunen, W Vandervorst
Journal of Applied Physics 96 (12), 7686-7695, 2004
3802004
Island growth as a growth mode in atomic layer deposition: A phenomenological model
RL Puurunen, W Vandervorst
Journal of Applied Physics 96 (12), 7686-7695, 2004
3802004
A short history of atomic layer deposition: Tuomo Suntola's atomic layer epitaxy
RL Puurunen
Chemical Vapor Deposition 20 (10-11-12), 332-344, 2014
3302014
Growth per cycle in atomic layer deposition: a theoretical model
RL Puurunen
Chemical Vapor Deposition 9 (5), 249-257, 2003
2472003
Spectroscopic study on the irreversible deactivation of chromia/alumina dehydrogenation catalysts
RL Puurunen, BM Weckhuysen
Journal of Catalysis 210 (2), 418-430, 2002
2042002
Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
OME Ylivaara, X Liu, L Kilpi, J Lyytinen, D Schneider, M Laitinen, J Julin, ...
Thin Solid Films 552, 124-135, 2014
2022014
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
RL Puurunen, W Vandervorst, WFA Besling, O Richard, H Bender, ...
Journal of applied physics 96 (9), 4878-4889, 2004
2002004
Growth Per Cycle in Atomic Layer Deposition: Real Application Examplesof a Theoretical Model
RL Puurunen
Chemical Vapor Deposition 9 (6), 327-332, 2003
1362003
Atomic layer deposition of hafnium oxide on germanium substrates
A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ...
Journal of applied physics 97 (6), 064104, 2005
1342005
Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina
RL Puurunen, M Lindblad, A Root, AOI Krause
Physical Chemistry Chemical Physics 3 (6), 1093-1102, 2001
1222001
Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”
E Ahvenniemi, AR Akbashev, S Ali, M Bechelany, M Berdova, S Boyadjiev, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (1 …, 2017
1152017
Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminum oxide from trimethylaluminum and water
RL Puurunen
Applied surface science 245 (1-4), 6-10, 2005
1152005
Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water
RL Puurunen
Journal of applied physics 95 (9), 4777-4786, 2004
1022004
Implementing ALD layers in MEMS processing
RL Puurunen, J Saarilahti, H Kattelus
ECS Transactions 11 (7), 3, 2007
1012007
IR and NMR study of the chemisorption of ammonia on trimethylaluminum-modified silica
RL Puurunen, A Root, S Haukka, EI Iiskola, M Lindblad, AOI Krause
The Journal of Physical Chemistry B 104 (28), 6599-6609, 2000
1012000
Formation of metal oxide particles in atomic layer deposition during the chemisorption of metal chlorides: a review
RL Puurunen
Chemical Vapor Deposition 11 (2), 79-90, 2005
922005
Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
M Putkonen, M Bosund, OME Ylivaara, RL Puurunen, L Kilpi, ...
Thin Solid Films 558, 93-98, 2014
912014
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