| Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect A Nazari, R Faez, H Shamloo Superlattices and Microstructures 97, 28-45, 2016 | 34 | 2016 |
| Improving ION/IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects A Nazari, R Faez, H Shamloo Superlattices and Microstructures 86, 483-492, 2015 | 31 | 2015 |
| Performance comparison of ideal and defected bilayer graphene nanoribbon FETs H Shamloo, R Faez, A Nazari Superlattices and Microstructures 111, 262-272, 2017 | 7 | 2017 |
| Performance study of tunneling field effect transistors based on the graphene and phosphorene nanoribbons H Shamloo, AY Goharrizi Micro and Nanostructures 169, 207336, 2022 | 5 | 2022 |
| Local impact of Stone–Wales defect on a single layer GNRFET H Shamloo, A Nazari, R Faez, A Shahhoseini Physics Letters A 384 (7), 126170, 2020 | 4 | 2020 |
| A functional study of a bilayer graphene nanoribbon FET with four different gate insulators H Shamloo, A Nazari, R Faez, S Haji-Nasiri IEEE Transactions on Nanotechnology 18, 890-895, 2019 | 3 | 2019 |
Atefeh NazaryResearcherVerified email at qiau.ac.ir
