Daniel Hiller
TitelZitiert vonJahr
Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices
AM Hartel, D Hiller, S Gutsch, P Löper, S Estradé, F Peiró, B Garrido, ...
Thin Solid Films 520 (1), 121-125, 2011
1192011
Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties
D Hiller, R Zierold, J Bachmann, M Alexe, Y Yang, JW Gerlach, ...
Journal of Applied Physics 107 (6), 064314, 2010
1112010
Fundamental temperature-dependent properties of the Si nanocrystal band gap
AM Hartel, S Gutsch, D Hiller, M Zacharias
Physical Review B 85 (16), 165306, 2012
672012
Charge transport in Si nanocrystal/SiO2 superlattices
S Gutsch, J Laube, AM Hartel, D Hiller, N Zakharov, P Werner, ...
Journal of Applied Physics 113 (13), 133703, 2013
632013
Strained interface defects in silicon nanocrystals
BG Lee, D Hiller, JW Luo, OE Semonin, MC Beard, M Zacharias, ...
Advanced Functional Materials 22 (15), 3223-3232, 2012
592012
Location and Electronic Nature of Phosphorus in the Si Nanocrystal − SiO2 System
D König, S Gutsch, H Gnaser, M Wahl, M Kopnarski, J Göttlicher, ...
Scientific reports 5, 9702, 2015
572015
Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography
H Gnaser, S Gutsch, M Wahl, R Schiller, M Kopnarski, D Hiller, ...
Journal of Applied Physics 115 (3), 034304, 2014
562014
centers at the Si-nanocrystal/ interface as the dominant photoluminescence quenching defect
D Hiller, M Jivanescu, A Stesmans, M Zacharias
Journal of Applied Physics 107 (8), 084309, 2010
532010
Nitrogen at the Si-nanocrystal/SiO 2 interface and its influence on luminescence and interface defects
D Hiller, S Goetze, F Munnik, M Jivanescu, JW Gerlach, J Vogt, E Pippel, ...
Physical Review B 82 (19), 195401, 2010
522010
Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals
J Valenta, M Greben, S Gutsch, D Hiller, M Zacharias
Applied Physics Letters 105 (24), 243107, 2014
432014
Intrinsic nonradiative recombination in ensembles of silicon nanocrystals
AM Hartel, S Gutsch, D Hiller, M Zacharias
Physical Review B 87 (3), 035428, 2013
402013
Quasi-Fermi-level splitting in ideal silicon nanocrystal superlattices
P Löper, R Müller, D Hiller, T Barthel, E Malguth, S Janz, JC Goldschmidt, ...
Physical Review B 84 (19), 195317, 2011
402011
Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch, SA Dyakov, L López-Conesa, ...
Journal of Applied Physics 115 (20), 204301, 2014
392014
Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO2 matrix
S Gutsch, AM Hartel, D Hiller, N Zakharov, P Werner, M Zacharias
Applied Physics Letters 100 (23), 233115, 2012
392012
Determining the crystalline degree of silicon nanoclusters/SiO2 multilayers by Raman scattering
S Hernández, J López-Vidrier, L López-Conesa, D Hiller, S Gutsch, ...
Journal of Applied Physics 115 (20), 203504, 2014
352014
Quasi-direct optical transitions in silicon nanocrystals with intensity exceeding the bulk
BG Lee, JW Luo, NR Neale, MC Beard, D Hiller, M Zacharias, P Stradins, ...
Nano letters 16 (3), 1583-1589, 2016
342016
Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift
A Zelenina, SA Dyakov, D Hiller, S Gutsch, V Trouillet, M Bruns, ...
Journal of Applied Physics 114 (18), 184311, 2013
332013
Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices
J López-Vidrier, Y Berencén, S Hernández, O Blázquez, S Gutsch, ...
Journal of Applied Physics 114 (16), 163701, 2013
322013
Rapid thermal annealing of size-controlled Si nanocrystals: Dependence of interface defect density on thermal budget
D Hiller, S Goetze, M Zacharias
Journal of Applied Physics 109 (5), 054308, 2011
312011
Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2
S Gutsch, J Laube, D Hiller, W Bock, M Wahl, M Kopnarski, H Gnaser, ...
Applied Physics Letters 106 (11), 113103, 2015
282015
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