| Study of gate junction temperature in GaAs pHEMTs using gate metal resistance thermometry BK Schwitter, AE Parker, AP Fattorini, SJ Mahon, MC Heimlich IEEE transactions on electron devices 60 (10), 3358-3364, 2013 | 32 | 2013 |
| Impact of bias and device structure on gate junction temperature in AlGaN/GaN-on-Si HEMTs BK Schwitter, AE Parker, SJ Mahon, AP Fattorini, MC Heimlich IEEE Transactions on Electron Devices 61 (5), 1327-1334, 2014 | 31 | 2014 |
| Transient gate resistance thermometry demonstrated on GaAs and GaN FET BK Schwitter, AE Parker, SJ Mahon, MC Heimlich 2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016 | 19 | 2016 |
| Fet operational temperature determination by gate structure resistance thermometry SJ Mahon, AW Hanson US Patent App. 15/658,116, 2019 | 9 | 2019 |
| Parameter extractions for a GaAs pHEMT thermal model using a TFR-heated test structure BK Schwitter, AP Fattorini, AE Parker, SJ Mahon, MC Heimlich IEEE Transactions on Electron Devices 62 (3), 795-801, 2015 | 8 | 2015 |
| Operational temperature determination in bipolar transistors by resistance thermometry SJ Mahon, AW Hanson, B Schwitter, C Lian, R Baskaran, F Gao WO Patent WO2019/055641A l, 2019 | 7 | 2019 |
| Fet operational temperature determination by field plate resistance thermometry SJ Mahon, AW Hanson US Patent App. 15/658,155, 2019 | 7 | 2019 |
| Steady state and transient thermal analyses of GaAs pHEMT devices BK Schwitter, MC Heimlich, AP Fattorini, J Tarazi WAMICON 2012 IEEE Wireless & Microwave Technology Conference, 1-7, 2012 | 7 | 2012 |
| Accurate non-linear large signal physics-based modeling for Ka-band GaN power amplifier design with ASM-HEMT J Hodges, SA Albahrani, B Schwitter, S Khandelwal 2021 IEEE MTT-S International Microwave Symposium (IMS), 349-351, 2021 | 6 | 2021 |
| Characterisation of GaAs pHEMT transient thermal response BK Schwitter, AE Parker, SJ Mahon, MC Heimlich 2018 13th European Microwave Integrated Circuits Conference (EuMIC), 218-221, 2018 | 5 | 2018 |
| AlGaN/GaN HEMT nonlinear model fitting including a trap model J Tarazi, BK Schwitter, AE Parker, SJ Mahon 2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015 | 5 | 2015 |
| NQR characteristics of an RDX plastic explosives simulant J Turecek, B Schwitter, D Miljak, M Stancl Applied Magnetic Resonance 43, 567-577, 2012 | 4 | 2012 |
| An integrated electrothermal design primer using an SiGe HBT PA [application notes] M Heimlich, B Schwitter, G Ritchie, J Fiala, S Mahon IEEE microwave magazine 13 (7), 70-80, 2012 | 4 | 2012 |
| Iso-trapping measurement technique for characterization of self-heating in a GaN HEMT SA Albahrani, A Parker, M Heimlich, B Schwitter IEEE Transactions on Electron Devices 64 (1), 102-108, 2016 | 3 | 2016 |
| Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements SA Albahrani, A Parker, G Town, M Heimlich, B Schwitter, S Mahon 2016 11th European Microwave Integrated Circuits Conference (EuMIC), 161-164, 2016 | 2 | 2016 |
| Study of self-heating in GaAs pHEMTs using pulsed IV analysis B Schwitter, SA Albahrani, A Parker, L Dunleavy, M Heimlich 81st ARFTG Microwave Measurement Conference, 1-6, 2013 | 2 | 2013 |
| Development towards a rapid hand-held portable explosives detector based on quadrupole resonance SSNC D. Miljak, B. Schwitter, D. Milinkovic, Y. Liu 10th International Symposium on the Analysis and Detection of Explosives 22, 2010 | 2* | 2010 |
| Zero Field NMR and NQR measurements of natural copper minerals DW Bennett, D Miljak, J Khachan Proceedings-34 Annual Condensed Matter and Materials Meeting-Waiheke Island, 2010 | 2 | 2010 |
| Thermal modelling of multifinger GaAs/GaN FETs using SPICE J Tarazi, AE Parker, B Schwitter, SJ Mahon 2014 1st Australian Microwave Symposium (AMS), 7-8, 2014 | 1 | 2014 |
| GaAs MMIC pHEMT gate metal thermometry BK Schwitter, AE Parker, SA Albahrani, AP Fattorini, MC Heimlich 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013 | 1 | 2013 |
Simon MahonMacquarie UniversityVerified email at mq.edu.au
