Bryan Schwitter
Bryan Schwitter
Altum RF
Verified email at altumrf.com
Title
Cited by
Cited by
Year
Impact of bias and device structure on gate junction temperature in AlGaN/GaN-on-Si HEMTs
BK Schwitter, AE Parker, SJ Mahon, AP Fattorini, MC Heimlich
IEEE Transactions on Electron Devices 61 (5), 1327-1334, 2014
232014
Study of gate junction temperature in GaAs pHEMTs using gate metal resistance thermometry
BK Schwitter, AE Parker, AP Fattorini, SJ Mahon, MC Heimlich
IEEE transactions on electron devices 60 (10), 3358-3364, 2013
212013
Transient gate resistance thermometry demonstrated on GaAs and GaN FET
BK Schwitter, AE Parker, SJ Mahon, MC Heimlich
2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016
82016
AlGaN/GaN HEMT nonlinear model fitting including a trap model
J Tarazi, BK Schwitter, AE Parker, SJ Mahon
2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015
52015
Parameter extractions for a GaAs pHEMT thermal model using a TFR-heated test structure
BK Schwitter, AP Fattorini, AE Parker, SJ Mahon, MC Heimlich
IEEE Transactions on Electron Devices 62 (3), 795-801, 2015
52015
Steady state and transient thermal analyses of GaAs pHEMT devices
BK Schwitter, MC Heimlich, AP Fattorini, J Tarazi
WAMICON 2012 IEEE Wireless & Microwave Technology Conference, 1-7, 2012
52012
An integrated electrothermal design primer using an SiGe HBT PA [application notes]
M Heimlich, B Schwitter, G Ritchie, J Fiala, S Mahon
IEEE microwave magazine 13 (7), 70-80, 2012
42012
Fet operational temperature determination by gate structure resistance thermometry
SJ Mahon, AW Hanson
US Patent App. 15/658,116, 2019
32019
NQR characteristics of an RDX plastic explosives simulant
J Turecek, B Schwitter, D Miljak, M Stancl
Applied magnetic resonance 43 (4), 567-577, 2012
32012
Operational temperature determination in bipolar transistors by resistance thermometry
SJ Mahon, AW Hanson, B Schwitter, C Lian, R Baskaran, F Gao
WO Patent WO2019/055641A l, 2019
22019
Fet operational temperature determination by field plate resistance thermometry
SJ Mahon, AW Hanson
US Patent App. 15/658,155, 2019
22019
Iso-trapping measurement technique for characterization of self-heating in a GaN HEMT
SA Albahrani, A Parker, M Heimlich, B Schwitter
IEEE Transactions on Electron Devices 64 (1), 102-108, 2016
22016
Study of self-heating in GaAs pHEMTs using pulsed IV analysis
B Schwitter, SA Albahrani, A Parker, L Dunleavy, M Heimlich
81st ARFTG Microwave Measurement Conference, 1-6, 2013
22013
Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements
SA Albahrani, A Parker, G Town, M Heimlich, B Schwitter, S Mahon
2016 11th European Microwave Integrated Circuits Conference (EuMIC), 161-164, 2016
12016
Thermal modelling of multifinger GaAs/GaN FETs using SPICE
J Tarazi, AE Parker, B Schwitter, SJ Mahon
2014 1st Australian Microwave Symposium (AMS), 7-8, 2014
12014
GaAs MMIC pHEMT gate metal thermometry
BK Schwitter, AE Parker, SA Albahrani, AP Fattorini, MC Heimlich
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013
12013
A new online detection method for arsenic minerals in process streams
B Schwitter, D Bennett, D Miljak
25th International Mineral Processing Congress 2010, IMPC 2010, 3009-3014, 2010
12010
Fet operational temperature determination by gate structure resistance thermometry
SJ Mahon, AW Hanson, C Lian, F Gao, R Baskaran, B Schwitter
US Patent App. 16/537,862, 2020
2020
Fet operational temperature determination by field plate resistance thermometry
SJ Mahon, AW Hanson, B Schwitter, C Lian, R Baskaran, F Gao
US Patent App. 16/537,831, 2020
2020
Characterisation of GaAs pHEMT Transient Thermal Response
BK Schwitter, AE Parker, SJ Mahon, MC Heimlich
2018 13th European Microwave Integrated Circuits Conference (EuMIC), 218-221, 2018
2018
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Articles 1–20