| Hygro-thermo-mechanical analysis and failure prediction in electronic packages by using peridynamics S Oterkus, E Madenci, E Oterkus, Y Hwang, J Bae, S Han 2014 IEEE 64th electronic components and technology conference (ECTC), 973-982, 2014 | 63 | 2014 |
| Peridynamic wetness approach for moisture concentration analysis in electronic packages C Diyaroglu, S Oterkus, E Oterkus, E Madenci, S Han, Y Hwang Microelectronics Reliability 70, 103-111, 2017 | 50 | 2017 |
| Accurate lifetime estimation of sub-20-nm NAND flash memory K Lee, M Kang, Y Hwang, H Shin IEEE Transactions on Electron Devices 63 (2), 659-667, 2016 | 30 | 2016 |
| Generation dependence of retention characteristics in extremely scaled NAND flash memory D Kang, K Lee, S Seo, S Kim, JS Lee, DS Bae, DH Li, Y Hwang, H Shin IEEE electron device letters 34 (9), 1139-1141, 2013 | 25 | 2013 |
| Analysis of failure mechanisms during the long-term retention operation in 3-D NAND flash memories S Kim, K Lee, C Woo, Y Hwang, H Shin IEEE Transactions on Electron Devices 67 (12), 5472-5478, 2020 | 19 | 2020 |
| Chip package interaction in micro bump and TSV structure HY You, Y Hwang, JW Pyun, YG Ryu, HS Kim 2012 IEEE 62nd Electronic Components and Technology Conference, 315-318, 2012 | 19 | 2012 |
| Peridynamic direct concentration approach by using ANSYS SW Han, C Diyaroglu, S Oterkus, E Madenci, E Oterkus, Y Hwang, H Seol 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), 544-549, 2016 | 18 | 2016 |
| Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory K Lee, D Kang, H Shin, S Kwon, S Kim, Y Hwang 2014 44th European Solid State Device Research Conference (ESSDERC), 58-61, 2014 | 17 | 2014 |
| Separation of corner component in TAT mechanism in retention characteristics of sub 20-nm NAND flash memory K Lee, M Kang, S Seo, D Kang, DH Li, Y Hwang, H Shin IEEE electron device letters 35 (1), 51-53, 2013 | 16 | 2013 |
| The effect of electrostatic discharge on electrical overstress susceptibility in a gallium arsenide MESFET-based device VÉ Eveloy, YC Hwang, MG Pecht IEEE Transactions on Device and Materials Reliability 7 (1), 200-208, 2007 | 12 | 2007 |
| Study of intermetallic growth on PWBs soldered with Sn/sub 3.0/Ag/sub 0.5/Cu M Lee, Y Hwang, M Pecht, J Park, Y Kim, W Liu 2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE …, 2004 | 12 | 2004 |
| Probability level dependence of failure mechanisms in sub-20 nm NAND flash memory D Kang, K Lee, M Kang, S Seo, DH Li, Y Hwang, H Shin IEEE Electron Device Letters 35 (3), 348-350, 2014 | 10 | 2014 |
| Analysis of read disturbance mechanism in retention of sub-20 nm NAND flash memory D Kang, K Lee, S Kwon, S Kim, Y Hwang, H Shin Japanese Journal of Applied Physics 54 (4S), 04DD03, 2015 | 9 | 2015 |
| Equivalent acceleration assessment of JEDEC moisture sensitivity levels using peridynamics S Han, S Lim, J Bae, Y Hwang, S Lee, S Oterkus, E Madenci, C Diyaroglu, ... 2015 IEEE 65th Electronic Components and Technology Conference (ECTC), 1518-1523, 2015 | 8 | 2015 |
| The reproducibility improving method of systemlevel ESD test through operating program workload analysis JH Jin, CP Jeon, JH Kim, YC Hwang 2016 URSI Asia-Pacific Radio Science Conference (URSI AP-RASC), 921-924, 2016 | 7 | 2016 |
| Modeling of apparent activation energy and lifetime estimation in NAND flash memory K Lee, M Kang, Y Hwang, H Shin Semiconductor Science and Technology 30 (12), 125006, 2015 | 7 | 2015 |
| Transistor Reliability Characterization for Advanced DRAM with HK+ MG & EUV process technology NH Lee, S Lee, SH Kim, GJ Kim, KW Lee, YS Lee, YC Hwang, HS Kim, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 6A. 1-1-6A. 1-6, 2022 | 6 | 2022 |
| Electromigration behavior of advanced metallization on the structural effects for memory devices KT Jang, YJ Park, MW Jeong, SM Lim, HW Yeon, JY Cho, MG Jin, JS Shin, ... Microelectronic engineering 156, 97-102, 2016 | 5 | 2016 |
| Knowledge-based reliability qualification and an acceleration model for lead-free solder joint Y Hwang, HK Jeon, YG Ryu, J Kang 2011 IEEE 61st Electronic Components and Technology Conference (ECTC), 1291-1295, 2011 | 5 | 2011 |
| Electrostatic discharge and electrical overstress failures of non-silicon devices YC Hwang University of Maryland, College Park, 2005 | 4 | 2005 |
Kyunghwan LeeSamsung electronicsVerified email at samsung.com
