J.-Y. Jason Lin
J.-Y. Jason Lin
Verified email at stanford.edu
Title
Cited by
Cited by
Year
Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height
JYJ Lin, AM Roy, A Nainani, Y Sun, KC Saraswat
Applied Physics Letters 98, 092113, 2011
1452011
Specific contact resistivity of tunnel barrier contacts used for Fermi level depinning
AM Roy, JYJ Lin, KC Saraswat
IEEE electron device letters 31 (10), 1077-1079, 2010
742010
Reduction in Specific Contact Resistivity to n+ Ge Using TiO2 Interfacial Layer
JY Jason Lin, AM Roy, KC Saraswat
IEEE electron device letters 33 (11), 1541-1543, 2012
56*2012
THz-bandwidth tunable slow light in semiconductor optical amplifiers
FG Sedgwick, B Pesala, JY Lin, WS Ko, X Zhao, CJ Chang-Hasnain
Optics Express 15 (2), 747-753, 2007
542007
Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance
Z Yuan, A Nainani, Y Sun, JYJ Lin, P Pianetta, KC Saraswat
Applied Physics Letters 98, 172106, 2011
512011
Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method
S Gupta, B Vincent, B Yang, D Lin, F Gencarelli, JYJ Lin, R Chen, ...
2012 International Electron Devices Meeting, 16.2. 1-16.2. 4, 2012
432012
Low resistance contacts to n-type germanium
JYJ Lin
Stanford University, 2013
212013
Low-contact-resistivity nickel germanide contacts on n+ Ge with phosphorus/antimony co-doping and Schottky barrier height lowering
B Yang, JYJ Lin, S Gupta, A Roy, S Liang, WP Maszara, Y Nishi, ...
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012
192012
The effect of fixed charge in tunnel-barrier contacts for Fermi-level depinning in germanium
AM Roy, J Lin, KC Saraswat
IEEE electron device letters 33 (6), 761-763, 2012
162012
Fabrication of GeSn-on-insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics
JYJ Lin, S Gupta, YC Huang, Y Kim, M Jin, E Sanchez, R Chen, K Balram, ...
2013 Symposium on VLSI Technology, T32-T33, 2013
122013
Metal-insulator-semiconductor contacts on Ge: Physics and applications
JYJ Lin, AM Roy, Y Sun, KC Saraswat
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012
72012
Enhancement of Phosphorus Dopant Activation and Diffusion Suppression by Fluorine Co-Implant in Epitaxially Grown Germanium
WS Jung, JH Nam, JYJ Lin, S Ryu, A Nainani, KC Saraswat
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012
32012
Increase of Fractional Advance in THz-Bandwidth Fast Light by Pulse Chirping in an SOA
FG Sedgwick, B Pesala, JY Lin, CJ Chang-Hasnain, T Lin
Slow and Fast Light, STuA5, 2007
22007
THz Tunable Slow Light in Semiconductor Optical Amplifiers
FG Sedgwick, B Pesala, JY Lin, WS Ko, X Zhao, CJ Chang-Hasnain
Optical Fiber Communication Conference, OThT5, 2007
22007
Characterization of Geometric Leakage Current ofIsolation and Effect of Forming Gas Annealing in Germanium p-n Junctions
WS Jung, JH Park, JYJ Lin, S Wong, KC Saraswat
IEEE electron device letters 33 (11), 1520-1522, 2012
12012
Schottky Barrier Height Engineering for Low Resistance Contacts to Ge and III-V Devices
K Saraswat, JYJ Lin, A Nainani, A Roy, B Yang, Z Yuan
Meeting Abstracts, 2630-2630, 2012
12012
Fermi-level pinning at metal/antimonides interface and demonstration of antimonides-based metal S/D Schottky pMOSFETs
Z Yuan, A Nainani, JY Lin, BR Bennett, JB Boos, MG Ancona, ...
69th Device Research Conference, 143-144, 2011
12011
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Articles 1–17