"Changhyun Ko"
"Changhyun Ko"
Associate Professor, Dept. of Materials Physics, Sookmyung Women's University
Verified email at
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Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
S Tongay, J Suh, C Ataca, W Fan, A Luce, JS Kang, J Liu, C Ko, ...
Scientific reports 3 (1), 2657, 2013
Oxide electronics utilizing ultrafast metal-insulator transitions
Z Yang, C Ko, S Ramanathan
Annual Review of Materials Research 41 (1), 337-367, 2011
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling
S Tongay, H Sahin, C Ko, A Luce, W Fan, K Liu, J Zhou, YS Huang, ...
Nature communications 5 (1), 3252, 2014
Doping against the native propensity of MoS2: degenerate hole doping by cation substitution
J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ...
Nano letters 14 (12), 6976-6982, 2014
Vanadium Dioxide as a Natural Disordered Metamaterial: Perfect Thermal Emission<? format?> and Large Broadband Negative Differential Thermal Emittance
MA Kats, R Blanchard, S Zhang, P Genevet, C Ko, S Ramanathan, ...
Physical Review X 3 (4), 041004, 2013
Anomalously low electronic thermal conductivity in metallic vanadium dioxide
S Lee, K Hippalgaonkar, F Yang, J Hong, C Ko, J Suh, K Liu, K Wang, ...
Science 355 (6323), 371-374, 2017
Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K
S Lee, F Yang, J Suh, S Yang, Y Lee, G Li, H Sung Choe, A Suslu, ...
Nature communications 6 (1), 1-7, 2015
Voltage-triggered ultrafast phase transition in vanadium dioxide switches
Y Zhou, X Chen, C Ko, Z Yang, C Mouli, S Ramanathan
IEEE Electron Device Letters 34 (2), 220-222, 2013
Dielectric and carrier transport properties of vanadium dioxide thin films across the phase transition utilizing gated capacitor devices
Z Yang, C Ko, V Balakrishnan, G Gopalakrishnan, S Ramanathan
Physical Review B—Condensed Matter and Materials Physics 82 (20), 205101, 2010
Recent advances in process engineering and upcoming applications of metal–organic frameworks
UJ Ryu, S Jee, PC Rao, J Shin, C Ko, M Yoon, KS Park, KM Choi
Coordination Chemistry Reviews 426, 213544, 2020
Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2
DW Oh, C Ko, S Ramanathan, DG Cahill
Applied Physics Letters 96 (15), 2010
Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide
W Bao, NJ Borys, C Ko, J Suh, W Fan, A Thron, Y Zhang, A Buyanin, ...
Nature communications 6 (1), 7993, 2015
Large resistivity modulation in mixed-phase metallic systems
Y Lee, ZQ Liu, JT Heron, JD Clarkson, J Hong, C Ko, MD Biegalski, ...
Nature communications 6 (1), 5959, 2015
Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy
Y Chen, C Chen, R Kealhofer, H Liu, Z Yuan, L Jiang, J Suh, J Park, C Ko, ...
Advanced Materials 30 (30), 1800754, 2018
Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
D Ruzmetov, G Gopalakrishnan, C Ko, V Narayanamurti, S Ramanathan
Journal of Applied Physics 107 (11), 2010
Two-dimensional semiconductor alloys: Monolayer Mo1− xWxSe2
S Tongay, DS Narang, J Kang, W Fan, C Ko, AV Luce, KX Wang, J Suh, ...
Applied Physics Letters 104 (1), 2014
Nanoscale imaging and control of resistance switching in VO2 at room temperature
J Kim, C Ko, A Frenzel, S Ramanathan, JE Hoffman
Applied Physics Letters 96 (21), 2010
Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry
C Ko, S Ramanathan
Applied Physics Letters 93 (25), 2008
Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory
C Ko, Y Lee, Y Chen, J Suh, D Fu, A Suslu, S Lee, JD Clarkson, HS Choe, ...
Adv. Mater 28 (15), 2923-2930, 2016
Work function of vanadium dioxide thin films across the metal-insulator transition and the role of surface nonstoichiometry
C Ko, Z Yang, S Ramanathan
ACS applied materials & interfaces 3 (9), 3396-3401, 2011
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