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Anthony Holland
Anthony Holland
Verified email at rmit.edu.au
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Cited by
Cited by
Year
A novel Love-mode device based on a ZnO/ST-cut quartz crystal structure for sensing applications
KK Zadeh, A Trinchi, W Wlodarski, A Holland
Sensors and Actuators A: Physical 100 (2-3), 135-143, 2002
1142002
Reactive ion etching of diamond in CF4, O2, O2 and Ar-based mixtures
PW Leech, GK Reeves, A Holland
Journal of materials science 36, 3453-3459, 2001
912001
Electronically tunable lumped element 90 hybrid coupler
E Fardin, A Holland, K Ghorbani
Electronics letters 42 (6), 353-355, 2006
552006
In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon
M Bhaskaran, S Sriram, TS Perova, V Ermakov, GJ Thorogood, KT Short, ...
Micron 40 (1), 89-93, 2009
532009
Enhanced tunability of magnetron sputtered Ba0. 5Sr0. 5TiO3 thin films on c-plane sapphire substrates
EA Fardin, AS Holland, K Ghorbani, P Reichart
Applied Physics Letters 89 (2), 2006
512006
Thermoelectric properties of bismuth telluride thin films deposited by radio frequency magnetron sputtering
J Tan, K Kalantar-Zadeh, W Wlodarski, S Bhargava, D Akolekar, ...
Smart Sensors, Actuators, and MEMS II 5836, 711-718, 2005
452005
Ion beam etching of CVD diamond film in Ar, Ar/O2 and Ar/CF4 gas mixtures
PW Leech, GK Reeves, AS Holland, F Shanks
Diamond and related materials 11 (3-6), 833-836, 2002
412002
Measurement of high piezoelectric response of strontium-doped lead zirconate titanate thin films using a nanoindenter
S Sriram, M Bhaskaran, AS Holland, KT Short, BA Latella
Journal of applied physics 101 (10), 2007
352007
Electrical characterization and hydrogen gas sensing properties of a n-ZnO∕ p-SiC Pt-gate metal semiconductor field effect transistor
S Kandasamy, W Wlodarski, A Holland, S Nakagomi, Y Kokubun
Applied physics letters 90 (6), 2007
352007
Polycrystalline Ba0. 6Sr0. 4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties
EA Fardin, AS Holland, K Ghorbani, EK Akdogan, WK Simon, A Safari, ...
Applied physics letters 89 (18), 2006
352006
The effect of post-deposition cooling rate on the orientation of piezoelectric (Pb0. 92Sr0. 08)(Zr0. 65Ti0. 35) O3 thin films deposited by RF magnetron sputtering
S Sriram, M Bhaskaran, AS Holland
Semiconductor science and technology 21 (9), 1236, 2006
352006
Poly (caprolactone) thin film preparation, morphology, and surface texture
D Simon, A Holland, R Shanks
Journal of applied polymer science 103 (2), 1287-1294, 2007
312007
Characterization of C54 titanium silicide thin films by spectroscopy, microscopy and diffraction
M Bhaskaran, S Sriram, KT Short, DRG Mitchell, AS Holland, GK Reeves
Journal of Physics D: Applied Physics 40 (17), 5213, 2007
302007
SAW-based gas sensors with rf sputtered InOx and PECVD SiNx films: Response to H2 and O3 gases
AC Fechete, W Wlodarski, K Kalantar-Zadeh, AS Holland, J Antoszewski, ...
Sensors and Actuators B: Chemical 118 (1-2), 362-367, 2006
302006
Comparison between conductometric and layered surface acoustic wave hydrogen gas sensors
SJ Ippolito, S Kandasamy, K Kalantar-Zadeh, W Wlodarski, A Holland
Smart materials and structures 15 (1), S131, 2005
302005
A varactor tuned branch-line hybrid coupler
EA Fardin, K Ghorbani, AS Holland
2005 Asia-Pacific Microwave Conference Proceedings 3, 4 pp., 2005
292005
Universal error corrections for finite semiconductor resistivity in cross-Kelvin resistor test structures
AS Holland, GK Reeves, PW Leech
IEEE Transactions on Electron Devices 51 (6), 914-919, 2004
272004
Rectifying electrical contacts to n-type 6H–SiC formed from energetically deposited carbon
M Kracica, ELH Mayes, HN Tran, AS Holland, DG McCulloch, ...
Carbon 102, 141-144, 2016
212016
New challenges to the modelling and electrical characterisation of ohmic contacts for ULSI devices
AS Holland, GK Reeves
Microelectronics Reliability 40 (6), 965-971, 2000
212000
Analytical and finite-element modeling of a two-contact circular test structure for specific contact resistivity
Y Pan, GK Reeves, PW Leech, AS Holland
IEEE transactions on electron devices 60 (3), 1202-1207, 2013
192013
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