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Lis Nanver
Lis Nanver
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Verified email at utwente.nl
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Cited by
Year
Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks
WCE Neo, Y Lin, XD Liu, LCN De Vreede, LE Larson, M Spirito, MJ Pelk, ...
IEEE Journal of Solid-State Circuits 41 (9), 2166-2176, 2006
2542006
Surface-passivated high-resistivity silicon substrates for RFICs
B Rong, JN Burghartz, LK Nanver, B Rejaei, M Van der Zwan
IEEE Electron Device Letters 25 (4), 176-178, 2004
1992004
“Distortion-Free” Varactor Diode Topologies for RF Adaptivity
K Buisman, LCN De Vreede, LE Larson, M Spirito, A Akhnoukh, ...
IEEE MTT-S International Microwave Symposium Digest, 2005., 157-160, 2005
1332005
Chemical Vapor Deposition of a-Boron Layers on Silicon for Controlled Nanometer-Deep p+n Junction Formation
F SARUBBI, LK Scholtes, TOM L.M., NANVER
Journal of Electronic Materials 39, 162–173, 2010
1242010
Advances in photodiodes
GF Dalla Betta
BoD–Books on Demand, 2011
882011
Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors
N Nenadovic, S Mijalkovic, LK Nanver, LKJ Vandamme, V d'Alessandro, ...
IEEE Journal of Solid-State Circuits 39 (10), 1764-1772, 2004
792004
SiGe growth on patterned Si (001) substrates: Surface evolution and evidence of modified island coarsening
JJ Zhang, M Stoffel, A Rastelli, OG Schmidt, V Jovanović, LK Nanver, ...
Applied Physics Letters 91 (17), 2007
762007
A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown
N Nenadovic, V d'Alessandro, LK Nanver, F Tamigi, N Rinaldi, ...
IEEE Transactions on Electron Devices 51 (1), 51-62, 2004
762004
A back-wafer contacted silicon-on-glass integrated bipolar process. Part I. The conflict electrical versus thermal isolation
LK Nanver, N Nenadovic, V d'Alessandro, H Schellevis, HW Van Zeijl, ...
IEEE Transactions on Electron Devices 51 (1), 42-50, 2004
752004
Robust UV/VUV/EUV PureB Photodiode Detector Technology with High CMOS Compatibility
LK Nanver, L Lin Qi, V Mohammadi, KRM Mok, WB Boer, N Golshani, ...
Journal of Selected Topics in Quantum Electronics, 2014
742014
High Effective Gummel Number of CVD Boron Layers in Ultrashallow Diode Configurations
F Sarubbi, LK Nanver, TLM Scholtes
IEEE Transactions on Electron Devices 57 (6), 1269-1278, 2010
662010
Pure boron-doped photodiodes: a solution for radiation detection in EUV lithography
F Sarubbi, LK Nanver, TLM Scholtes, SN Nihtianov, F Scholze
ESSDERC 2008-38th European Solid-State Device Research Conference, 278-281, 2008
632008
Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector
S Nihtianov, AJ Van Der Sijs, B Moest, PWJM Kemper, MAM Haast, ...
US Patent 7,586,108, 2009
60*2009
Surface-passivated high-resistivity silicon as a true microwave substrate
M Spirito, FM De Paola, LK Nanver, E Valletta, B Rong, B Rejaei, ...
IEEE transactions on microwave theory and techniques 53 (7), 2340-2347, 2005
592005
n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility
C Biasotto, LK Nanver, J Moers, J Gerharz, G Mussler, J van der Cingel, ...
IEEE electron device letters 31 (10), 1083-1085, 2010
562010
Boron-layer silicon photodiodes for high-efficiency low-energy electron detection
A Šakić, LK Nanver, TLM Scholtes, CTH Heerkens, T Knežević, ...
Solid-state electronics 65, 38-44, 2011
532011
DIMES-01, a baseline BIFET process for smart sensor experimentation
LK Nanver, EJG Goudena, HW Van Zeijl
Sensors and Actuators A: Physical 36 (2), 139-147, 1993
521993
Radiation detector
LK Nanver, TLM Scholtes, CS Kooijman, GNA Van Veen
US Patent 8,450,820, 2013
492013
UV-sensitive low dark-count PureB single-photon avalanche diode
L Qi, KRC Mok, M Aminian, E Charbon, LK Nanver
IEEE Transactions on Electron Devices 61 (11), 3768-3774, 2014
472014
Temperature dependence of chemical-vapor deposition of pure boron layers from diborane
V Mohammadi, WB De Boer, LK Nanver
Applied Physics Letters 101 (11), 2012
442012
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