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Zeheng Wang
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High-κ perovskite membranes as insulators for two-dimensional transistors
JK Huang, Y Wan, J Shi, J Zhang, Z Wang, W Wang, N Yang, Y Liu, ...
Nature 605 (7909), 262-267, 2022
1432022
7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering
Q Zhou, L Liu, A Zhang, B Chen, Y Jin, Y Shi, Z Wang, W Chen, B Zhang
IEEE Electron Device Letters 37 (2), 165-168, 2015
1122015
Evaluating the traditional Chinese medicine (TCM) officially recommended in China for COVID-19 using ontology-based side-effect prediction framework (OSPF) and deep learning
Z Wang, L Li, M Song, J Yan, J Shi, Y Yao
Journal of Ethnopharmacology 272 (23 May 2021), 113957, 2021
672021
An Ontology‐Based Artificial Intelligence Model for Medicine Side‐Effect Prediction: Taking Traditional Chinese Medicine as an Example
Y Yao, Z Wang, L Li, K Lu, R Liu, Z Liu, J Yan
Computational and mathematical methods in medicine 2019 (1), 8617503, 2019
312019
Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate
Z Wang, J Cao, R Sun, F Wang, Y Yao
Superlattices and Microstructures 120, 753-758, 2018
232018
Approaching high-accuracy side effect prediction of traditional Chinese medicine compound prescription using network embedding and deep learning
Z Wang, L Li, J Yan, Y Yao
IEEE Access 8, 82493-82499, 2020
212020
Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors
F Wang, W Chen, X Li, R Sun, X Xu, Y Xin, Z Wang, Y Shi, Y Xia, C Liu, ...
Journal of Physics D: Applied Physics 53 (30), 305106, 2020
202020
Prolonging the cycling lifetime of lithium metal batteries with a monolithic and inorganic-rich solid electrolyte interphase
J Yang, M Li, Z Sun, X Lian, Y Wang, Y Niu, C Jiang, Y Luo, Y Liu, Z Tian, ...
Energy & Environmental Science 16 (9), 3837-3846, 2023
192023
Simulation study of an ultralow switching loss p-GaN gate HEMT with dynamic charge storage mechanism
F Wang, W Chen, X Xu, R Sun, Z Wang, Y Xia, Y Xin, C Liu, Q Zhou, ...
IEEE Transactions on Electron Devices 68 (1), 175-183, 2020
192020
On the Baliga’s figure-of-merits (BFOM) enhancement of a novel GaN nano-pillar vertical field effect transistor (FET) with 2DEG channel and patterned substrate
Z Wang, Z Wang, Z Zhang, D Yang, Y Yao
Nanoscale Research Letters 14, 1-10, 2019
192019
A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensor
Z Wang, S Wang, Z Zhang, C Wang, D Yang, X Chen, Z Wang, J Cao, ...
IEEE Transactions on Electron Devices 66 (4), 1917-1923, 2019
192019
Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage
Z Wang, W Chen, F Wang, J Cao, R Sun, K Ren, Y Luo, S Guo, Z Wang, ...
Superlattices and Microstructures 117, 330-335, 2018
182018
A machine learning-assisted model for GaN ohmic contacts regarding the fabrication processes
Z Wang, L Li, Y Yao
IEEE Transactions on Electron Devices 68 (5), 2212-2219, 2021
172021
An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps
F Wang, W Chen, R Sun, Z Wang, Q Zhou, B Zhang
Journal of Physics D: Applied Physics 54 (9), 095107, 2020
162020
Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study
Z Wang
Journal of Computational Electronics 18 (4), 1251-1258, 2019
162019
Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate
Z Wang, J Cao, F Wang, W Chen, B Zhang, S Guo, Y Yao
Superlattices and Microstructures 122, 343-348, 2018
162018
Design and optimization on a novel high-performance ultra-thin barrier AlGaN/GaN power HEMT with local charge compensation trench
Z Wang, Z Zhang, S Wang, C Chen, Z Wang, Y Yao
Applied Sciences 9 (15), 3054, 2019
152019
Simulation study of high‐reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode
Z Wang, F Wang, S Guo, Z Wang
Micro & Nano Letters 12 (9), 660-663, 2017
142017
Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode
F Wang, W Chen, Z Wang, R Sun, J Wei, X Li, Y Shi, X Jin, X Xu, N Chen, ...
Superlattices and Microstructures 105, 132-138, 2017
122017
A novel technology for turn-on voltage reduction of high-performance lateral heterojunction diode with source-gate shorted anode
Z Wang, D Yang, J Cao, F Wang, Y Yao
Superlattices and Microstructures 125, 144-150, 2019
112019
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