Christopher Kocot
Christopher Kocot
Director, Finisar Corporation
Verified email at finisar.com
Title
Cited by
Cited by
Year
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency
MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ...
Applied physics letters 75 (16), 2365-2367, 1999
6021999
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency
MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ...
Applied physics letters 75 (16), 2365-2367, 1999
5971999
A 71-Gb/s NRZ modulated 850-nm VCSEL-based optical link
DM Kuchta, AV Rylyakov, FE Doany, CL Schow, JE Proesel, CW Baks, ...
IEEE Photonics Technology Letters 27 (6), 577-580, 2015
3782015
Backdating in GaAs MESFET's
C Kocot, CA Stolte
IEEE Transactions on Microwave Theory and Techniques 30 (7), 963-968, 1982
1921982
VCSEL-based interconnects for current and future data centers
JA Tatum, D Gazula, LA Graham, JK Guenter, RH Johnson, J King, ...
Journal of Lightwave Technology 33 (4), 727-732, 2015
1852015
Bulk GaN based violet light-emitting diodes with high efficiency at very high current density
MJ Cich, RI Aldaz, A Chakraborty, A David, MJ Grundmann, A Tyagi, ...
Applied Physics Letters 101 (22), 223509, 2012
1182012
GaN-based light emitting diodes with tunnel junctions
T Takeuchi, G Hasnain, S Corzine, M Hueschen, RP Schneider Jr, ...
Japanese Journal of Applied Physics 40 (8B), L861, 2001
1022001
Techno-economic comparison of silicon photonics and multimode VCSELs
D Mahgerefteh, C Thompson, C Cole, G Denoyer, T Nguyen, ...
Journal of Lightwave Technology 34 (2), 233-242, 2016
852016
1.4× efficiency improvement in transparent-substrate P light-emitting diodes with thin Å) active regions
NF Gardner, HC Chui, EI Chen, MR Krames, JW Huang, FA Kish, ...
Applied physics letters 74 (15), 2230-2232, 1999
681999
Heterojunction‐induced phenomena in Hall effect and photoconductivity measurements of epitaxial AlxGa1xAs
DM Collins, DE Mars, B Fischer, C Kocot
Journal of applied physics 54 (2), 857-861, 1983
681983
III-Nitride light emitting devices with low driving voltage
W Goetz, NF Gardner, RS Kern, AY Kim, A Munkholm, SA Stockman, ...
US Patent 6,630,692, 2003
662003
Light emitting semiconductor devices including wafer bonded heterostructures
MR Krames, CP Kocot
US Patent 6,525,335, 2003
572003
A 55Gb/s directly modulated 850nm VCSEL-based optical link
DM Kuchta, AV Rylyakov, CL Schow, JE Proesel, C Baks, C Kocot, ...
IEEE Photonics Conference 2012, 1-2, 2012
552012
Chirped multi-well active region LED
PN Grillot, CP Kocot, MR Krames, EI Chen, SA Stockman, YL Chang, ...
US Patent 6,504,171, 2003
532003
Single-channel 50G and 100G discrete multitone transmission with 25G VCSEL technology
WA Ling, I Lyubomirsky, R Rodes, HM Daghighian, C Kocot
Journal of Lightwave Technology 33 (4), 761-767, 2015
522015
High-brightness AlGaInN light-emitting diodes
MR Krames, G Christenson, D Collins, LW Cook, MG Craford, A Edwards, ...
Light-Emitting Diodes: Research, Manufacturing, and Applications IV 3938, 2-12, 2000
482000
Anomalies in MODFET's with a low-temperature buffer
BJF Lin, CP Kocot, DE Mars, R Jaeger
IEEE transactions on electron devices 37 (1), 46-50, 1990
471990
The role of As in molecular‐beam epitaxy GaAs layers grown at low temperature
Z Liliental‐Weber, G Cooper, R Mariella Jr, C Kocot
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991
461991
Light emitting diodes with graded composition active regions
DP Bour, NF Gardner, WK Goetz, SA Stockman, T Takeuchi, G Hasnain, ...
US Patent 6,955,933, 2005
432005
III-nitride light-emitting devices with improved high-current efficiency
NF Gardner, CP Kocot, SA Stockman
US Patent 6,943,381, 2005
422005
The system can't perform the operation now. Try again later.
Articles 1–20