Yanan Guo
Yanan Guo
Samsung Austin Semiconductors
Verified email at samsung.com
Title
Cited by
Cited by
Year
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, X Zhang, Y Guo, J Zou
Nano letters 7 (4), 921-926, 2007
3562007
Selective-area epitaxy of pure wurtzite inp nanowires: high quantum efficiency and room-temperature lasing
Q Gao, D Saxena, F Wang, L Fu, S Mokkapati, Y Guo, L Li, J Wong-Leung, ...
Nano letters 14 (9), 5206-5211, 2014
1762014
Growth mechanism of truncated triangular III–V nanowires
J Zou, M Paladugu, H Wang, GJ Auchterlonie, YN Guo, Y Kim, Q Gao, ...
Small 3 (3), 389-393, 2007
1482007
Structural characteristics of nanowire heterostructures grown by metal-organic chemical vapor deposition
YN Guo, J Zou, M Paladugu, H Wang, Q Gao, HH Tan, C Jagadish
Applied physics letters 89 (23), 231917, 2006
1202006
Direct Measure of Strain and Electronic Structure in GaAs/GaP Core− Shell Nanowires
M Montazeri, M Fickenscher, LM Smith, HE Jackson, J Yarrison-Rice, ...
Nano letters 10 (3), 880-886, 2010
1142010
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
M Paladugu, J Zou, YN Guo, X Zhang, Y Kim, HJ Joyce, Q Gao, HH Tan, ...
Applied Physics Letters 93 (10), 101911, 2008
1132008
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
M Paladugu, J Zou, YN Guo, GJ Auchterlonie, HJ Joyce, Q Gao, ...
Small 3 (11), 1873-1877, 2007
1112007
Single nanowire photoconductive terahertz detectors
K Peng, P Parkinson, L Fu, Q Gao, N Jiang, YN Guo, F Wang, HJ Joyce, ...
Nano letters 15 (1), 206-210, 2015
1042015
Phase separation induced by Au catalysts in ternary InGaAs nanowires
YN Guo, HY Xu, GJ Auchterlonie, T Burgess, HJ Joyce, Q Gao, HH Tan, ...
Nano letters 13 (2), 643-650, 2013
882013
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
S Paiman, Q Gao, HJ Joyce, Y Kim, HH Tan, C Jagadish, X Zhang, Y Guo, ...
Journal of Physics D: Applied Physics 43 (44), 445402, 2010
712010
Design and room-temperature operation of GaAs/AlGaAs multiple quantum well nanowire lasers
D Saxena, N Jiang, X Yuan, S Mokkapati, Y Guo, HH Tan, C Jagadish
Nano letters 16 (8), 5080-5086, 2016
692016
Defect-free< 110> zinc-blende structured InAs nanowires catalyzed by palladium
H Xu, Y Wang, Y Guo, Z Liao, Q Gao, HH Tan, C Jagadish, J Zou
Nano letters 12 (11), 5744-5749, 2012
672012
Evolution of epitaxial InAs nanowires on GaAs (111) B
X Zhang, J Zou, M Paladugu, Y Guo, Y Wang, Y Kim, HJ Joyce, Q Gao, ...
small 5 (3), 366-369, 2009
642009
Localization and chemical speciation of Pb in roots of signal grass (Brachiaria decumbens) and Rhodes grass (Chloris gayana)
PM Kopittke, CJ Asher, FPC Blamey, GJ Auchterlonie, YN Guo, ...
Environmental science & technology 42 (12), 4595-4599, 2008
572008
Novel growth and properties of GaAs nanowires on Si substrates
JH Kang, Q Gao, HJ Joyce, HH Tan, C Jagadish, Y Kim, DY Choi, Y Guo, ...
Nanotechnology 21 (3), 035604, 2009
542009
Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures
M Paladugu, J Zou, YN Guo, X Zhang, HJ Joyce, Q Gao, HH Tan, ...
Angewandte Chemie International Edition 48 (4), 780-783, 2009
482009
Defect-free GaAs/AlGaAs core–shell nanowires on Si substrates
JH Kang, Q Gao, HJ Joyce, HH Tan, C Jagadish, Y Kim, Y Guo, H Xu, ...
Crystal Growth & Design 11 (7), 3109-3114, 2011
472011
Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy
Z Zhang, ZY Lu, PP Chen, HY Xu, YN Guo, ZM Liao, SX Shi, W Lu, J Zou
Applied Physics Letters 103 (7), 073109, 2013
462013
Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
F Wang, Q Gao, K Peng, Z Li, Z Li, Y Guo, L Fu, LM Smith, HH Tan, ...
Nano letters 15 (5), 3017-3023, 2015
452015
Simultaneous Selective-Area and Vapor–Liquid–Solid Growth of InP Nanowire Arrays
Q Gao, VG Dubrovskii, P Caroff, J Wong-Leung, L Li, Y Guo, L Fu, HH Tan, ...
Nano letters 16 (7), 4361-4367, 2016
432016
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