Yanan Guo
Yanan Guo
Samsung Austin Semiconductors
Verified email at samsung.com
Title
Cited by
Cited by
Year
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, X Zhang, Y Guo, J Zou
Nano letters 7 (4), 921-926, 2007
3472007
Selective-area epitaxy of pure wurtzite inp nanowires: high quantum efficiency and room-temperature lasing
Q Gao, D Saxena, F Wang, L Fu, S Mokkapati, Y Guo, L Li, J Wong-Leung, ...
Nano letters 14 (9), 5206-5211, 2014
1682014
Growth mechanism of truncated triangular III–V nanowires
J Zou, M Paladugu, H Wang, GJ Auchterlonie, YN Guo, Y Kim, Q Gao, ...
Small 3 (3), 389-393, 2007
1442007
Structural characteristics of nanowire heterostructures grown by metal-organic chemical vapor deposition
YN Guo, J Zou, M Paladugu, H Wang, Q Gao, HH Tan, C Jagadish
Applied physics letters 89 (23), 231917, 2006
1172006
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
M Paladugu, J Zou, YN Guo, X Zhang, Y Kim, HJ Joyce, Q Gao, HH Tan, ...
Applied Physics Letters 93 (10), 101911, 2008
1132008
Direct Measure of Strain and Electronic Structure in GaAs/GaP Core− Shell Nanowires
M Montazeri, M Fickenscher, LM Smith, HE Jackson, J Yarrison-Rice, ...
Nano letters 10 (3), 880-886, 2010
1122010
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
M Paladugu, J Zou, YN Guo, GJ Auchterlonie, HJ Joyce, Q Gao, ...
Small 3 (11), 1873-1877, 2007
1052007
Single nanowire photoconductive terahertz detectors
K Peng, P Parkinson, L Fu, Q Gao, N Jiang, YN Guo, F Wang, HJ Joyce, ...
Nano letters 15 (1), 206-210, 2015
972015
Phase separation induced by Au catalysts in ternary InGaAs nanowires
YN Guo, HY Xu, GJ Auchterlonie, T Burgess, HJ Joyce, Q Gao, HH Tan, ...
Nano letters 13 (2), 643-650, 2013
832013
Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
S Paiman, Q Gao, HJ Joyce, Y Kim, HH Tan, C Jagadish, X Zhang, Y Guo, ...
Journal of Physics D: Applied Physics 43 (44), 445402, 2010
682010
Defect-free< 110> zinc-blende structured InAs nanowires catalyzed by palladium
H Xu, Y Wang, Y Guo, Z Liao, Q Gao, HH Tan, C Jagadish, J Zou
Nano letters 12 (11), 5744-5749, 2012
662012
Design and room-temperature operation of GaAs/AlGaAs multiple quantum well nanowire lasers
D Saxena, N Jiang, X Yuan, S Mokkapati, Y Guo, HH Tan, C Jagadish
Nano letters 16 (8), 5080-5086, 2016
642016
Evolution of epitaxial InAs nanowires on GaAs (111) B
X Zhang, J Zou, M Paladugu, Y Guo, Y Wang, Y Kim, HJ Joyce, Q Gao, ...
small 5 (3), 366-369, 2009
632009
Novel growth and properties of GaAs nanowires on Si substrates
JH Kang, Q Gao, HJ Joyce, HH Tan, C Jagadish, Y Kim, DY Choi, Y Guo, ...
Nanotechnology 21 (3), 035604, 2009
532009
Localization and chemical speciation of Pb in roots of signal grass (Brachiaria decumbens) and Rhodes grass (Chloris gayana)
PM Kopittke, CJ Asher, FPC Blamey, GJ Auchterlonie, YN Guo, ...
Environmental science & technology 42 (12), 4595-4599, 2008
532008
Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures
M Paladugu, J Zou, YN Guo, X Zhang, HJ Joyce, Q Gao, HH Tan, ...
Angewandte Chemie International Edition 48 (4), 780-783, 2009
482009
Defect-free GaAs/AlGaAs core–shell nanowires on Si substrates
JH Kang, Q Gao, HJ Joyce, HH Tan, C Jagadish, Y Kim, Y Guo, H Xu, ...
Crystal Growth & Design 11 (7), 3109-3114, 2011
452011
Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping
F Wang, Q Gao, K Peng, Z Li, Z Li, Y Guo, L Fu, LM Smith, HH Tan, ...
Nano letters 15 (5), 3017-3023, 2015
442015
Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
M Paladugu, J Zou, YN Guo, X Zhang, HJ Joyce, Q Gao, HH Tan, ...
Applied Physics Letters 93 (20), 201908, 2008
422008
Simultaneous Selective-Area and Vapor–Liquid–Solid Growth of InP Nanowire Arrays
Q Gao, VG Dubrovskii, P Caroff, J Wong-Leung, L Li, Y Guo, L Fu, HH Tan, ...
Nano letters 16 (7), 4361-4367, 2016
412016
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