| Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash JH Yoon, KM Kim, SJ Song, JY Seok, KJ Yoon, DE Kwon, TH Park, ... Advanced Materials 27 (25), 3811-3816, 2015 | 186 | 2015 |
| Optical and electronic properties of post-annealed ZnO: Al thin films Y Kim, W Lee, DR Jung, J Kim, S Nam, H Kim, B Park Applied Physics Letters 96 (17), 2010 | 180 | 2010 |
| Nociceptive memristor Y Kim, YJ Kwon, DE Kwon, KJ Yoon, JH Yoon, S Yoo, HJ Kim, TH Park, ... Advanced Materials 30 (8), 1704320, 2018 | 147 | 2018 |
| What will come after V‐NAND—vertical resistive switching memory? KJ Yoon, Y Kim, CS Hwang Advanced Electronic Materials 5 (9), 1800914, 2019 | 76 | 2019 |
| Fabrication of a Cu‐cone‐shaped cation source inserted conductive bridge random access memory and its improved switching reliability HJ Kim, TH Park, KJ Yoon, WM Seong, JW Jeon, YJ Kwon, Y Kim, ... Advanced Functional Materials 29 (8), 1806278, 2019 | 58 | 2019 |
| Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 KJ Yoon, GH Kim, S Yoo, W Bae, JH Yoon, TH Park, DE Kwon, YJ Kwon, ... Advanced Electronic Materials 3 (7), 1700152, 2017 | 47 | 2017 |
| The current limit and self-rectification functionalities in the TiO 2/HfO 2 resistive switching material system JH Yoon, DE Kwon, Y Kim, YJ Kwon, KJ Yoon, TH Park, XL Shao, ... Nanoscale 9 (33), 11920-11928, 2017 | 47 | 2017 |
| Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area JH Yoon, S Yoo, SJ Song, KJ Yoon, DE Kwon, YJ Kwon, TH Park, HJ Kim, ... ACS Applied Materials & Interfaces 8 (28), 18215-18221, 2016 | 42 | 2016 |
| Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical … HJ Kim, KJ Yoon, TH Park, HJ Kim, YJ Kwon, XL Shao, DE Kwon, YM Kim, ... Advanced Electronic Materials 3 (2), 1600404, 2017 | 39 | 2017 |
| A true random number generator using threshold‐switching‐based memristors in an efficient circuit design KS Woo, Y Wang, J Kim, Y Kim, YJ Kwon, JH Yoon, W Kim, CS Hwang Advanced Electronic Materials 5 (2), 1800543, 2019 | 38 | 2019 |
| A combination of a volatile‐memristor‐based true random‐number generator and a nonlinear‐feedback shift register for high‐speed encryption KS Woo, Y Wang, Y Kim, J Kim, W Kim, CS Hwang Advanced Electronic Materials 6 (5), 1901117, 2020 | 32 | 2020 |
| A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO 2/Al memory XL Shao, KM Kim, KJ Yoon, SJ Song, JH Yoon, HJ Kim, TH Park, ... Nanoscale 8 (36), 16455-16466, 2016 | 25 | 2016 |
| Balancing the source and sink of oxygen vacancies for the resistive switching memory TH Park, YJ Kwon, HJ Kim, HC Woo, GS Kim, CH An, Y Kim, DE Kwon, ... ACS applied materials & interfaces 10 (25), 21445-21450, 2018 | 24 | 2018 |
| Novel Selector‐Induced Current‐Limiting Effect through Asymmetry Control for High‐Density One‐Selector–One‐Resistor Crossbar Arrays Y Kim, YJ Kwon, J Kim, CH An, T Park, DE Kwon, HC Woo, HJ Kim, ... Advanced Electronic Materials 5 (7), 1800806, 2019 | 18 | 2019 |
| Kernel Application of the Stacked Crossbar Array Composed of Self‐rectifying Resistive Switching Memory for Convolutional Neural Network Y Kim, J Kim, SS Kim, YJ Kwon, GS Kim, JW Jeon, DE Kwon, JH Yoon, ... Advanced Intelligent Systems, 2019 | 13 | 2019 |
| Leakage Current Control of SrTiO3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition SH Kim, W Lee, CH An, Y Kim, DS Kwon, DG Kim, SH Cha, ST Cho, J Lim, ... physica status solidi (RRL)–Rapid Research Letters 13 (11), 1900373, 2019 | 8 | 2019 |
| Bipolar resistive switching property of Si 3 N 4− x thin films depending on N deficiency DE Kwon, Y Kim, HJ Kim, YJ Kwon, KS Woo, JH Yoon, CS Hwang Journal of Materials Chemistry C 8 (5), 1755-1761, 2020 | 4 | 2020 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityVerified email at snu.ac.kr
