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Chang Sun
Chang Sun
Technical expert, Longi. sunc@longi.com
Verified email at longi.com
Title
Cited by
Cited by
Year
A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon
C Sun, FE Rougieux, D Macdonald
Journal of Applied Physics 117 (4), 2015
942015
Light and elevated temperature induced degradation in p-type and n-type cast-grown multicrystalline and mono-like silicon
HC Sio, H Wang, Q Wang, C Sun, W Chen, H Jin, D Macdonald
Solar Energy Materials and Solar Cells 182, 98-104, 2018
802018
Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films
AY Liu, C Sun, VP Markevich, AR Peaker, JD Murphy, D MacDonald
Journal of Applied Physics 120 (19), 2016
592016
Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review
FE Rougieux, C Sun, D Macdonald
Solar Energy Materials and Solar Cells 187, 263-272, 2018
462018
Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing
AY Liu, C Sun, D Macdonald
Journal of Applied Physics 116 (19), 2014
442014
Reassessment of the recombination parameters of chromium in n-and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon
C Sun, FE Rougieux, D Macdonald
Journal of applied physics 115 (21), 2014
442014
Methods to improve bulk lifetime in n-type Czochralski-grown upgraded metallurgical-grade silicon wafers
R Basnet, FE Rougieux, C Sun, SP Phang, C Samundsett, R Einhaus, ...
IEEE Journal of Photovoltaics 8 (4), 990-996, 2018
312018
Origins of hydrogen that passivates bulk defects in silicon heterojunction solar cells
C Sun, W Weigand, J Shi, Z Yu, R Basnet, SP Phang, ZC Holman, ...
Applied Physics Letters 115 (25), 2019
182019
Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman
R Basnet, C Sun, H Wu, HT Nguyen, FE Rougieux, D Macdonald
Journal of Applied Physics 124 (24), 2018
162018
Progress with defect engineering in silicon heterojunction solar cells
M Wright, BV Stefani, A Soeriyadi, R Basnet, C Sun, W Weigand, Z Yu, ...
physica status solidi (RRL)–Rapid Research Letters 15 (9), 2100170, 2021
152021
Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon
C Sun, AY Liu, SP Phang, FE Rougieux, D Macdonald
Journal of Applied Physics 118 (8), 2015
152015
Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells
R Basnet, W Weigand, JY Zhengshan, C Sun, SP Phang, HC Sio, ...
Solar Energy Materials and Solar Cells 205, 110287, 2020
142020
Complete regeneration of BO-related defects in n-type upgraded metallurgical-grade Czochralski-grown silicon heterojunction solar cells
C Sun, D Chen, W Weigand, R Basnet, SP Phang, B Hallam, ZC Holman, ...
Applied Physics Letters 113 (15), 2018
142018
22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n‐type Solar‐Grade Wafers
R Basnet, SP Phang, C Samundsett, D Yan, W Liang, C Sun, S Armand, ...
Solar RRL 3 (11), 1900297, 2019
122019
Gettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion
AY Liu, C Sun, HC Sio, X Zhang, H Jin, D Macdonald
Journal of Applied Physics 125 (4), 2019
112019
Transition Metals in a Cast‐Monocrystalline Silicon Ingot Studied by Silicon Nitride Gettering
C Sun, AY Liu, A Samadi, C Chan, A Ciesla, D Macdonald
physica status solidi (RRL)–Rapid Research Letters 13 (12), 1900456, 2019
102019
Gettering effects of silicon nitride films from various plasma-enhanced chemical vapor deposition conditions
AY Liu, Z Hameiri, Y Wan, C Sun, D Macdonald
IEEE Journal of Photovoltaics 9 (1), 78-81, 2018
92018
Onset of ring defects in n-type Czochralski-grown silicon wafers
R Basnet, SP Phang, C Sun, FE Rougieux, D Macdonald
Journal of Applied Physics 127 (15), 2020
82020
Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon
C Sun, D Chen, F Rougieux, R Basnet, B Hallam, D Macdonald
Solar Energy Materials and Solar Cells 195, 174-181, 2019
82019
Precipitation of Cu and Ni in n-and p-type Czochralski-grown silicon characterized by photoluminescence imaging
C Sun, HT Nguyen, FE Rougieux, D Macdonald
Journal of Crystal Growth 460, 98-104, 2017
82017
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