| Coupled quantum dots in a graphene-based two-dimensional semimetal S Moriyama, D Tsuya, E Watanabe, S Uji, M Shimizu, T Mori, ... Nano letters 9 (8), 2891-2896, 2009 | 85 | 2009 |
| High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO2 layer by flash lamp annealing K Usuda, Y Kamata, Y Kamimuta, T Mori, M Koike, T Tezuka Applied Physics Express 7 (5), 056501, 2014 | 79 | 2014 |
| Analog of a quantum heat engine using a single-spin qubit K Ono, SN Shevchenko, T Mori, S Moriyama, F Nori Physical Review Letters 125 (16), 166802, 2020 | 73 | 2020 |
| Performance enhancement of tunnel field-effect transistors by synthetic electric field effect Y Morita, T Mori, S Migita, W Mizubayashi, A Tanabe, K Fukuda, ... IEEE electron device letters 35 (7), 792-794, 2014 | 65 | 2014 |
| Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap T Mori, Y Morita, N Miyata, S Migita, K Fukuda, W Mizubayashi, ... Applied Physics Letters 106 (8), 2015 | 62 | 2015 |
| Dielectric functions of In x Ga 1− x As alloys TJ Kim, TH Ghong, YD Kim, SJ Kim, DE Aspnes, T Mori, T Yao, BH Koo Physical Review B 68 (11), 115323, 2003 | 59 | 2003 |
| High-temperature operation of a silicon qubit K Ono, T Mori, S Moriyama Scientific reports 9 (1), 469, 2019 | 54 | 2019 |
| Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors T Mori, T Yasuda, K Fukuda, Y Morita, S Migita, A Tanabe, T Maeda, ... Applied Physics Express 7 (2), 024201, 2014 | 40 | 2014 |
| High-performance tri-gate poly-Ge junction-less p-and n-MOSFETs fabricated by flash lamp annealing process K Usuda, Y Kamata, Y Kamimuta, T Mori, M Koike, T Tezuka 2014 IEEE International Electron Devices Meeting, 16.6. 1-16.6. 4, 2014 | 33 | 2014 |
| Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel Y Morita, T Mori, S Migita, W Mizubayashi, A Tanabe, K Fukuda, ... 2013 Symposium on VLSI Technology, T236-T237, 2013 | 32 | 2013 |
| Tunnel field-effect transistors with extremely low off-current using shadowing effect in drain implantation T Mori, T Yasuda, T Maeda, W Mizubayashi, Y Liu, K Sakamoto, ... Japanese journal of applied physics 50 (6S), 06GF14, 2011 | 32 | 2011 |
| Quantum Interferometry with a -Factor-Tunable Spin Qubit K Ono, SN Shevchenko, T Mori, S Moriyama, F Nori Physical Review Letters 122 (20), 207703, 2019 | 29 | 2019 |
| Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching N Ninomiya, T Mori, N Uchida, E Watanabe, D Tsuya, S Moriyama, ... Japanese Journal of Applied Physics 54 (4), 046502, 2015 | 29 | 2015 |
| Tunnel field-effect transistor with epitaxially grown tunnel junction fabricated by source/drain-first and tunnel-junction-last processes Y Morita, T Mori, S Migita, W Mizubayashi, A Tanabe, K Fukuda, ... Japanese Journal of Applied Physics 52 (4S), 04CC25, 2013 | 29 | 2013 |
| Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology T Mori, S Iizuka, T Nakayama MRS Communications 7 (3), 541-550, 2017 | 28 | 2017 |
| Experimental realization of complementary p-and n-tunnel FinFETs with subthreshold slopes of less than 60 mV/decade and very low (pA/μm) off-current on a Si CMOS platform Y Morita, T Mori, K Fukuda, W Mizubayashi, S Migita, T Matsukawa, ... 2014 IEEE International Electron Devices Meeting, 9.7. 1-9.7. 4, 2014 | 25 | 2014 |
| A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling K Fukuda, T Mori, W Mizubayashi, Y Morita, A Tanabe, M Masahara, ... Journal of Applied Physics 114 (14), 2013 | 25 | 2013 |
| Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET Y Morita, K Fukuda, T Mori, W Mizubayashi, S Migita, K Endo, Y Liu, ... Japanese Journal of Applied Physics 55 (4S), 04EB06, 2016 | 23 | 2016 |
| Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces N Miyata, A Ohtake, M Ichikawa, T Mori, T Yasuda Applied Physics Letters 104 (23), 2014 | 22 | 2014 |
| On the nonlocal modeling of tunnel-FETs K Fukuda, T Mori, W Mizubayashi, Y Morita, A Tanabe, M Masahara, ... Proc. SISPAD, 284-287, 2012 | 22 | 2012 |
