Dave Sukhdeo
Dave Sukhdeo
PhD in Electrical Engineering, Stanford University
Verified email at stanford.edu
Title
Cited by
Cited by
Year
Direct bandgap germanium-on-silicon inferred from 5.7%〈 100〉 uniaxial tensile strain
DS Sukhdeo, D Nam, JH Kang, ML Brongersma, KC Saraswat
Photonics Research 2 (3), A8-A13, 2014
1402014
Strained germanium thin film membrane on silicon substrate for optoelectronics
D Nam, D Sukhdeo, A Roy, K Balram, SL Cheng, KCY Huang, Z Yuan, ...
Optics Express 19 (27), 25866-25872, 2011
1322011
Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping
B Dutt, DS Sukhdeo, D Nam, BM Vulovic, Z Yuan, KC Saraswat
Photonics Journal, IEEE 4 (5), 2002-2009, 2012
1242012
Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles
D Nam, DS Sukhdeo, JH Kang, J Petykiewicz, JH Lee, WS Jung, ...
Nano letters 13 (7), 3118-3123, 2013
1112013
Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser
D Nam, D Sukhdeo, SL Cheng, A Roy, K Chih-Yao Huang, M Brongersma, ...
Applied physics letters 100 (13), 131112, 2012
952012
Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser
B Dutt, H Lin, DS Sukhdeo, BM Vulovic, S Gupta, D Nam, KC Saraswat, ...
IEEE Journal of Selected Topics in Quantum Electronics 19 (5), 1502706-1502706, 2013
742013
Direct bandgap light emission from strained germanium nanowires coupled with high-Q nanophotonic cavities
J Petykiewicz, D Nam, DS Sukhdeo, S Gupta, S Buckley, AY Piggott, ...
Nano letters 16 (4), 2168-2173, 2016
562016
Study of carrier statistics in uniaxially strained Ge for a low-threshold Ge laser
D Nam, DS Sukhdeo, S Gupta, JH Kang, ML Brongersma, KC Saraswat
IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 16-22, 2014
462014
Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics
DS Sukhdeo, D Nam, JH Kang, ML Brongersma, KC Saraswat
Optics Express 23 (13), 16740-16749, 2015
242015
Impact of minority carrier lifetime on the performance of strained germanium light sources
DS Sukhdeo, S Gupta, KC Saraswat, BR Dutt, D Nam
Optics Communications 364, 233-237, 2016
182016
Theoretical modeling for the interaction of tin alloying with n-type doping and tensile strain for GeSn lasers
D Sukhdeo, Y Kim, S Gupta, K Saraswat, B Dutt, D Nam
IEEE Electron Device Letters 37 (10), 1307-1310, 2016
82016
Ge microdisk with lithographically-tunable strain using CMOS-compatible process
DS Sukhdeo, J Petykiewicz, S Gupta, D Kim, S Woo, Y Kim, J Vučković, ...
Optics express 23 (26), 33249-33254, 2015
82015
Approaches for a viable germanium laser: tensile strain, GeSn alloys, and n-type doping
DS Sukhdeo, H Lin, D Nam, Z Yuan, BM Vulovic, S Gupta, JS Harris, ...
2013 Optical Interconnects Conference, 112-113, 2013
82013
Direct bandgap germanium nanowires inferred from 5.0% uniaxial tensile strain
DS Sukhdeo, D Nam, JH Kang, J Petykiewicz, JH Lee, WS Jung, ...
10th International Conference on Group IV Photonics, 73-74, 2013
72013
Ultimate limits of biaxial tensile strain and n-type doping for realizing an efficient low-threshold Ge laser
DS Sukhdeo, S Gupta, KC Saraswat, BR Dutt, D Nam
Japanese Journal of Applied Physics 55 (2), 024301, 2016
62016
Direct bandgap light emission from strained Ge nanowires coupled with high-Q optical cavities
J Petykiewicz, D Nam, DS Sukhdeo, S Gupta, S Buckley, AY Piggott, ...
arXiv preprint arXiv:1508.01255, 2015
62015
A novel, highly-strained structure with an integrated optical cavity for a low threshold germanium laser
S Gupta, D Nam, J Petykiewicz, D Sukhdeo, J Vuckovic, K Saraswat
2015 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2015
52015
Anomalous threshold reduction from< 100> uniaxial strain for a low-threshold Ge laser
DS Sukhdeo, Y Kim, S Gupta, KC Saraswat, BR Dutt, D Nam
Optics Communications 379, 32-35, 2016
32016
Toward an efficient germanium-on-silicon laser: ultimate limits of tensile strain and n-type doping
DS Sukhdeo, D Nam, Z Yuan, BR Dutt, KC Saraswat
CLEO: Science and Innovations, JTh2A. 109, 2013
32013
Crossed nanobeam structure for a low-threshold germanium laser
D Nam, JA Petykiewicz, DS Sukhdeo, S Gupta, J Vuckovic, KC Saraswat
US Patent 9,595,812, 2017
22017
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