| AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire HM Wang, JP Zhang, CQ Chen, Q Fareed, JW Yang, MA Khan Applied physics letters 81 (4), 604-606, 2002 | 262 | 2002 |
| Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management JP Zhang, HM Wang, ME Gaevski, CQ Chen, Q Fareed, JW Yang, ... Applied physics letters 80 (19), 3542-3544, 2002 | 261 | 2002 |
| Pulsed atomic-layer epitaxy of ultrahigh-quality structures for deep ultraviolet emissions below 230 nm JP Zhang, MA Khan, WH Sun, HM Wang, CQ Chen, Q Fareed, E Kuokstis, ... Applied Physics Letters 81 (23), 4392-4394, 2002 | 165 | 2002 |
| Terahertz detection by GaN/AlGaN transistors A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ... Electronics Letters 42 (23), 1342-1344, 2006 | 142 | 2006 |
| Pulsed atomic layer epitaxy of quaternary AlInGaN layers J Zhang, E Kuokstis, Q Fareed, H Wang, J Yang, G Simin, MA Khan, ... Applied Physics Letters 79 (7), 925-927, 2001 | 112 | 2001 |
| GaN homoepitaxy on freestanding (1100) oriented GaN substrates CQ Chen, ME Gaevski, WH Sun, E Kuokstis, JP Zhang, RSQ Fareed, ... Applied Physics Letters 81 (17), 3194-3196, 2002 | 108 | 2002 |
| Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates Z Chen, RS Qhalid Fareed, M Gaevski, V Adivarahan, JW Yang, A Khan, ... Applied physics letters 89 (8), 2006 | 103 | 2006 |
| Etching a nitride-based heterostructure R Gaska, X Hu, Q Fareed, M Shur US Patent 7,429,534, 2008 | 97 | 2008 |
| High-Temperature Performance of AlGaN/GaN MOSHEMT With Gate Insulator Fabricated on Si (111) Substrate F Husna, M Lachab, M Sultana, V Adivarahan, Q Fareed, A Khan IEEE Transactions on Electron Devices 59 (9), 2424-2429, 2012 | 96 | 2012 |
| Near-band-edge photoluminescence of wurtzite-type AlN E Kuokstis, J Zhang, Q Fareed, JW Yang, G Simin, MA Khan, R Gaska, ... Applied physics letters 81 (15), 2755-2757, 2002 | 91 | 2002 |
| High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition RS Fareed, R Jain, R Gaska, MS Shur, J Wu, W Walukiewicz, MA Khan Applied physics letters 84 (11), 1892-1894, 2004 | 86 | 2004 |
| Methods of growing nitride-based film using varying pulses Q Fareed, R Gaska, M Shur US Patent 7,192,849, 2007 | 84 | 2007 |
| V-shaped defects in InGaN/GaN multiquantum wells S Mahanty, M Hao, T Sugahara, RSQ Fareed, Y Morishima, Y Naoi, ... Materials Letters 41 (2), 67-71, 1999 | 81 | 1999 |
| AlGaN layers grown on GaN using strain-relief interlayers CQ Chen, JP Zhang, ME Gaevski, HM Wang, WH Sun, RSQ Fareed, ... Applied physics letters 81 (26), 4961-4963, 2002 | 69 | 2002 |
| 276 nm substrate-free flip-chip AlGaN light-emitting diodes S Hwang, D Morgan, A Kesler, M Lachab, B Zhang, A Heidari, H Nazir, ... Applied physics express 4 (3), 032102, 2011 | 67 | 2011 |
| Band-edge luminescence in quaternary AlInGaN light-emitting diodes M Shatalov, A Chitnis, V Adivarahan, A Lunev, J Zhang, JW Yang, ... Applied Physics Letters 78 (6), 817-819, 2001 | 64 | 2001 |
| Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition RS Qhalid Fareed, JW Yang, J Zhang, V Adivarahan, V Chaturvedi, ... Applied Physics Letters 77 (15), 2343-2345, 2000 | 62 | 2000 |
| Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition M Lachab, DH Youn, RSQ Fareed, T Wang, S Sakai Solid-State Electronics 44 (9), 1669-1677, 2000 | 60 | 2000 |
| Utlraviolet light emitting devices and methods of fabrication MA Khan, Q Fareed, V Adivarahan US Patent 9,331,240, 2016 | 59 | 2016 |
| Air-bridged lateral growth of crack-free on highly relaxed porous GaN RSQ Fareed, V Adivarahan, CQ Chen, S Rai, E Kuokstis, JW Yang, ... Applied physics letters 84 (5), 696-698, 2004 | 59 | 2004 |
Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicVerified email at rpi.edu
