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Toshihiko Maemoto
Toshihiko Maemoto
大阪工業大学
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Year
Zinc oxide ion‐sensitive field‐effect transistors and biosensors
M Yano, K Koike, K Mukai, T Onaka, Y Hirofuji, K Ogata, S Omatu, ...
physica status solidi (a) 211 (9), 2098-2104, 2014
322014
Growth of ZnO/Zn1− xMgxO films by pulsed laser ablation
T Maemoto, N Ichiba, S Sasa, M Inoue
Thin Solid Films 486 (1-2), 174-177, 2005
312005
Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors
T Yoshida, T Tachibana, T Maemoto, S Sasa, M Inoue
Applied Physics A 101, 685-688, 2010
252010
Structural and optical properties of ZnMgO thin films grown by pulsed laser deposition using ZnO-MgO multiple targets
T Maemoto, N Ichiba, H Ishii, S Sasa, M Inoue
journal of physics: conference series 59 (1), 670, 2007
222007
Intense terahertz radiation from InAs thin films
S Sasa, S Umino, Y Ishibashi, T Maemoto, M Inoue, K Takeya, ...
Journal of Infrared, Millimeter, and Terahertz Waves 32, 646-654, 2011
192011
High Speed Quasi‐One‐Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices
T Maemoto, H Yamamoto, M Konami, A Kajiuchi, T Ikeda, S Sasa, ...
physica status solidi (b) 204 (1), 255-258, 1997
181997
Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures
M Inoue, T Sugihara, T Maemoto, S Sasa, H Dobashi, S Izumiya
Superlattices and microstructures 21 (1), 69-76, 1997
141997
Signatures of dynamical tunneling in semiclassical quantum dots
A Ramamoorthy, R Akis, JP Bird, T Maemoto, DK Ferry, M Inoue
Physical Review E 68 (2), 026221, 2003
132003
Rectification effects of zno-based transparent nanodiodes on glass and flexible plastic substrates
Y Kimura, Y Sun, T Maemoto, S Sasa, S Kasai, M Inoue
Japanese Journal of Applied Physics 52 (6S), 06GE09, 2013
122013
A potentiometric immunosensor based on a ZnO field-effect transistor
K Koike, K Mukai, T Onaka, T Maemoto, S Sasa, M Yano
Japanese Journal of Applied Physics 53 (5S1), 05FF04, 2014
92014
Quantum anti-dot arrays and quantum wire transistors fabricated on heterostructures
S Osako, T Sugihara, Y Yamamoto, T Maemoto, S Sasa, M Inoue, ...
Semiconductor science and technology 11 (4), 571, 1996
91996
Reflection layer mediated enhancement of terahertz radiation utilizing heavily-doped InAs thin films
M Kozub, K Nishisaka, T Maemoto, S Sasa, K Takayama, M Tonouchi
Journal of Infrared, Millimeter, and Terahertz Waves 36, 423-429, 2015
82015
Fabrication of superconducting transistors using InAs/(AlGa) Sb quantum wells
T Maemoto, H Dobashi, S Izumiya, KYK Yoh, MIM Inoue
Japanese journal of applied physics 33 (12S), 7204, 1994
81994
Superlattices and Microstructures
M Inoue, T Sugihara, T Maemoto, S Sasa, H Dobashi, S Izumiya
I, 1985
81985
Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structures
K Oura, H Wada, M Koyama, T Maemoto, S Sasa
Journal of Information Display 23 (1), 105-113, 2022
72022
Electron transport in InAs/AlGaSb ballistic rectifiers
T Maemoto, M Koyama, M Furukawa, H Takahashi, S Sasa, M Inoue
Journal of Physics: Conference Series 38 (1), 112, 2006
72006
Magneto-transport properties of InAs/AlGaSb open quantum dot structures
T Maemoto, T Kobayashi, T Karasaki, K Kita, S Sasa, M Inoue, K Ishibashi, ...
Physica B: Condensed Matter 314 (1-4), 481-485, 2002
72002
Study for Enhancement of Terahertz Radiation Using GaSb/InAs Heterostructures
S Sasa, Y Kinoshita, M Tatsumi, M Koyama, T Maemoto, S Hamauchi, ...
Journal of Physics: Conference Series 906 (1), 012015, 2017
62017
Flexible zinc oxide thin-film transistors using oxide buffer layers on polyethylene napthalate substrates
T Higaki, T Tachibana, Y Kimura, T Maemoto, S Sasa, M Inoue
2011 International Meeting for Future of Electron Devices, 92-93, 2011
62011
Pb-doped bisrcacuo superconducting thin films grown by halide-CVD
M Yano, T Moku, T Maemoto, S Inagaki, M Inoue
Phase Transitions: A Multinational Journal 42 (1-2), 73-78, 1993
61993
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