| Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon T Schutz-Kuchly, J Veirman, S Dubois, DR Heslinga Applied Physics Letters 96 (9), 2010 | 73 | 2010 |
| Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation J Veirman, S Dubois, N Enjalbert, JP Garandet, DR Heslinga, M Lemiti Solid-State Electronics 54 (6), 671-674, 2010 | 49 | 2010 |
| Electronic properties of highly-doped and compensated solar-grade silicon wafers and solar cells J Veirman, S Dubois, N Enjalbert, JP Garandet, M Lemiti Journal of Applied Physics 109 (10), 2011 | 46 | 2011 |
| Recombination activity associated with thermal donor generation in monocrystalline silicon and effect on the conversion efficiency of heterojunction solar cells M Tomassini, J Veirman, R Varache, E Letty, S Dubois, Y Hu, Ř Nielsen Journal of Applied Physics 119 (8), 2016 | 45 | 2016 |
| Low temperature‐coefficient for solar cells processed from solar‐grade silicon purified by metallurgical route F Tanay, S Dubois, N Enjalbert, J Veirman Progress in Photovoltaics: Research and Applications 19 (8), 966-972, 2011 | 44 | 2011 |
| A Fast and Easily Implemented Method for Interstitial Oxygen Concentration Mapping Through the Activation of Thermal Donors in Silicon. J Veirman, S Dubois, N Enjalbert, M Lemiti Energy Procedia 8, 41-46, 2011 | 29 | 2011 |
| Light‐induced degradation in compensated n‐type Czochralski silicon solar cells T Schutz‐Kuchly, S Dubois, J Veirman, Y Veschetti, D Heslinga, O Palais physica status solidi (a) 208 (3), 572-575, 2011 | 23 | 2011 |
| Efficiency limiting crystal defects in monocrystalline silicon and their characterization in production F Korsós, L Roszol, F Jay, J Veirman, AD Draoua, M Albaric, T Szarvas, ... Solar Energy Materials and Solar Cells 186, 217-226, 2018 | 21 | 2018 |
| Silicon wafers for industrial n-type SHJ solar cells: Bulk quality requirements, large-scale availability and guidelines for future developments J Veirman, R Varache, M Albaric, A Danel, B Guo, N Fu, YC Wang Solar Energy Materials and Solar Cells 228, 111128, 2021 | 20 | 2021 |
| Silicon heterojunction solar cells with open-circuit-voltage above 750mV A Danel, S Harrison, F Gérenton, A Moustafa, R Varache, J Veirman, ... Proc. of the 35th European Photovoltaic Solar Energy Conference and …, 2018 | 19 | 2018 |
| Influence of copper contamination on the illuminated forward and dark reverse current‐voltage characteristics of multicrystalline p‐type silicon solar cells T Turmagambetov, S Dubois, JP Garandet, B Martel, N Enjalbert, ... physica status solidi (c) 11 (11‐12), 1697-1702, 2014 | 17 | 2014 |
| Exclusively thermal donor-doped Cz wafers for silicon heterojunction solar cell technology F Jay, J Veirman, N Najid, D Muńoz, S Dubois, A Jouini Energy Procedia 55, 533-538, 2014 | 16 | 2014 |
| The BOLID project: Suppression of the boron-oxygen related light-induced-degradation S Dubois, F Tanay, J Veirman, N Enjalbert, J Stendera, S Butté, P Pochet, ... Proc. 27th European PVSEC, Frankfurt, Germany, 749-754, 2012 | 16 | 2012 |
| Towards an industrial in-line solution for efficient post-treatment of silicon heterojunction solar cells J Veirman, JS Caron, P Jeronimo, T Gageot, AJK Leoga, AS Ozanne, ... Solar Energy Materials and Solar Cells 245, 111867, 2022 | 14 | 2022 |
| Understanding of the influence of localized surface defectivity properties on the performances of silicon heterojunction cells V Giglia, R Varache, J Veirman, E Fourmond Progress in Photovoltaics: Research and Applications 28 (12), 1333-1344, 2020 | 14 | 2020 |
| Influence of cell edges on the performance of silicon heterojunction solar cells V Giglia, R Varache, J Veirman, E Fourmond Solar Energy Materials and Solar Cells 238, 111605, 2022 | 13 | 2022 |
| Comparison of characterization techniques for measurements of doping concentrations in compensated n-type silicon A Fauveau, B Martel, J Veirman, S Dubois, A Kaminski-Cachopo, ... Energy procedia 92, 691-696, 2016 | 13 | 2016 |
| Numerical method for thermal donors formation simulation during silicon Czochralski growth M Chatelain, M Albaric, D Pelletier, J Veirman, E Letty Solar Energy Materials and Solar Cells 219, 110785, 2021 | 12 | 2021 |
| Influence of edge recombinations on the performance of half-, shingled-and full silicon heterojunction solar cells V Giglia, J Veirman, R Varache, B Portaluppi, S Harrison, E Fourmond 37th European Photovoltaic Solar Energy Conference and Exhibition, 282-285, 2020 | 11 | 2020 |
| Hall mobility drops in disordered boron‐doped Czochralski silicon compensated by thermal donors activation J Veirman, S Dubois, N Enjalbert, JP Garandet, DR Heslinga, M Lemiti physica status solidi c 8 (3), 729-732, 2011 | 11 | 2011 |
Mustapha LemitiProfesseur INSA de LyonVerified email at insa-lyon.fr
