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Michael A Reshchikov
Michael A Reshchikov
Professor of Physics, Virginia Commonwealth University
Verified email at vcu.edu - Homepage
Title
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Cited by
Year
A comprehensive review of ZnO materials and devices
Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, ...
Journal of applied physics 98 (4), 2005
131502005
Luminescence properties of defects in GaN
MA Reshchikov, H Morkoç
Journal of applied physics 97 (6), 2005
22892005
A comprehensive review of ZnO materials and devices
YI Alivov, C Liu, A Teke, MA Reshchikov, S Dogan, V Avrutin, SJ Cho, ...
Journal of applied physics 98 (4), 041301.1-041301.103, 2005
3692005
Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
MA Reshchikov, GC Yi, BW Wessels
Physical Review B 59 (20), 13176, 1999
2901999
Yellow luminescence of gallium nitride generated by carbon defect complexes
DO Demchenko, IC Diallo, MA Reshchikov
Physical review letters 110 (8), 087404, 2013
2492013
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films
MA Reshchikov, RY Korotkov
Physical Review B 64 (11), 115205, 2001
2292001
Luminescence properties of defects in ZnO
MA Reshchikov, H Morkoc, B Nemeth, J Nause, J Xie, B Hertog, ...
Physica B: Condensed Matter 401, 358-361, 2007
2202007
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
P Visconti, KM Jones, MA Reshchikov, R Cingolani, H Morkoç, RJ Molnar
Applied Physics Letters 77 (22), 3532-3534, 2000
2152000
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN
MA Reshchikov, DO Demchenko, A Usikov, H Helava, Y Makarov
Physical Review B 90 (23), 235203, 2014
2082014
Energy band bowing parameter in alloys
F Yun, MA Reshchikov, L He, T King, H Morkoç, SW Novak, L Wei
Journal of applied physics 92 (8), 4837-4839, 2002
2082002
Green luminescence in Mg-doped GaN
MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ...
Physical Review B 90 (3), 035207, 2014
1482014
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
MA Reshchikov, F Shahedipour, RY Korotkov, BW Wessels, MP Ulmer
Journal of Applied Physics 87 (7), 3351-3354, 2000
1472000
Surface photovoltage in undoped n-type GaN
MA Reshchikov, M Foussekis, AA Baski
Journal of Applied Physics 107 (11), 2010
1302010
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
D Huang, P Visconti, KM Jones, MA Reshchikov, F Yun, AA Baski, T King, ...
Applied Physics Letters 78 (26), 4145-4147, 2001
1192001
Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
MA Reshchikov, AA Kvasov, MF Bishop, T McMullen, A Usikov, ...
Physical Review B 84 (7), 075212, 2011
1142011
Measurement and analysis of photoluminescence in GaN
MA Reshchikov
Journal of Applied Physics 129 (12), 2021
1072021
Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors
MA Reshchikov
Journal of Applied Physics 115 (1), 2014
1052014
Yellow and green luminescence in a freestanding GaN template
MA Reshchikov, H Morkoç, SS Park, KY Lee
Applied Physics Letters 78 (20), 3041-3043, 2001
1022001
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study
MA Reshchikov, H Morkoç, SS Park, KY Lee
Applied Physics Letters 81 (26), 4970-4972, 2002
1012002
S. Doğ an, V. Avrutin, S.-J. Cho, and H. Morkoc
Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov
Journal of applied physics 98, 11, 2005
1002005
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