| HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation K Joshi, S Hung, S Mukhopadhyay, V Chaudhary, N Nanaware, ... 2013 IEEE international reliability physics symposium (IRPS), 4C. 2.1-4C. 2.10, 2013 | 64 | 2013 |
| Ultra-low contact resistivity with highly doped Si: P contact for nMOSFET CN Ni, X Li, S Sharma, KV Rao, M Jin, C Lazik, V Banthia, B Colombeau, ... 2015 Symposium on VLSI Technology (VLSI Technology), T118-T119, 2015 | 48 | 2015 |
| Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes CN Ni, KV Rao, F Khaja, S Sharma, S Tang, JJ Chen, KE Hollar, N Breil, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 38 | 2016 |
| Fin doping by hot implant for 14nm FinFET technology and beyond BS Wood, FA Khaja, BP Colombeau, S Sun, A Waite, M Jin, H Chen, ... ECS Transactions 58 (9), 249, 2013 | 34 | 2013 |
| Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and solid-phase epitaxial regrowth (SPER) YR Yang, N Breil, CY Yang, J Hsieh, F Chiang, B Colombeau, BN Guo, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 27 | 2016 |
| The response of carbon nanotube ensembles to fluid flow: Applications to mechanical property measurement and diagnostics CP Deck, C Ni, KS Vecchio, PR Bandaru Journal of Applied Physics 106 (7), 2009 | 24 | 2009 |
| Enhanced optical absorption cross-section characteristics of multi-wall carbon nanotubes C Ni, PR Bandaru Carbon 47 (12), 2898-2903, 2009 | 23 | 2009 |
| Modification of the electrical characteristics of single wall carbon nanotubes through selective functionalization C Ni, J Chattopadhyay, WE Billups, PR Bandaru Applied Physics Letters 93 (24), 2008 | 19 | 2008 |
| Enhanced differential conductance through light induced current switching in Mn12 acetate molecular junctions C Ni, S Shah, D Hendrickson, PR Bandaru Applied physics letters 89 (21), 2006 | 18 | 2006 |
| PMOS contact resistance solution compatible to CMOS integration for 7 nm node and beyond CN Ni, YC Huang, S Jun, S Sun, A Vyas, F Khaja, KV Rao, S Sharma, ... 2016 International Symposium on VLSI Technology, Systems and Application …, 2016 | 11 | 2016 |
| Optical determination of the flexural rigidity of carbon nanotube ensembles C Ni, C Deck, KS Vecchio, PR Bandaru Applied Physics Letters 92 (17), 2008 | 11 | 2008 |
| L. 2 Device Architecture, Material and Process Dependencies… 33 Date, S. Datta, A. Brand, J. Swenberg, S. Mahapatra K Joshi, S Hung, S Mukhopadhyay, V Chaudhary, N Nanaware, ... IEEE International Reliability Physics Symposium Proceedings C 4, 2.1, 2013 | 10 | 2013 |
| Scaled gate stacks for sub-20-nm CMOS logic applications through integration of thermal IL and ALD HfOx K Joshi, S Hung, S Mukhopadhyay, T Sato, M Bevan, B Rajamohanan, ... IEEE Electron Device Letters 34 (1), 3-5, 2012 | 10 | 2012 |
| Carbon nanotube-based fluid flow/shear sensors CN Ni, CP Deck, KS Vecchio, PR Bandaru MRS Online Proceedings Library 963, 1-7, 2006 | 8 | 2006 |
| Gate-first TiAlN P-gate electrode for cost effective high-k metal gate implementation CN Ni, X Fu, N Yoshida, O Chan, M Jin, H Chen, S Hung, R Jakkaraju, ... Proceedings of Technical Program of 2012 VLSI Technology, System and …, 2012 | 6 | 2012 |
| Damage engineered Se implant for NMOS TiSix contact resistivity reduction KV Rao, FA Khaja, CN Ni, S Sharma, B Zheng, J Ramalingam, J Gelatos, ... 2014 20th International Conference on Ion Implantation Technology (IIT), 1-3, 2014 | 4 | 2014 |
| Schottky barrier height tuning using P+ DSS for NMOS contact resistance reduction FA Khaja, KV Rao, CN Ni, S Muthukrishnan, J Lei, A Darlark, I Peidous, ... AIP Conference Proceedings 1496 (1), 42-45, 2012 | 4 | 2012 |
| The effect of interfacial oxide and high-κ thickness on NMOS Vthshift from plasma-induced damage CY Chang, J Zhou, CN Ni, O Chan, S Sun, W Suen, S Mings, M Bevan, ... 2014 Silicon Nanoelectronics Workshop (SNW), 1-2, 2014 | 3 | 2014 |
| 3D MOSCAP Vehicle for Electrical Characterization of Sidewall Dielectrics for 3D Monolithic Integration B Wood, B McDougall, O Chan, A Dent, CN Ni, R Hung, H Chen, P Xu, ... ECS Transactions 35 (2), 69, 2011 | 3 | 2011 |
| Laser anneal assisted contact resistivity reduction with post-silicide implantation for 14nm node and beyond CN Ni, KV Rao, F Khaja, S Sharma, B Zheng, J Ramalingam, J Gelatos, ... 2013 International Symposium on VLSI Technology, Systems and Application …, 2013 | 2 | 2013 |
