| Hexagonal boron nitride is an indirect bandgap semiconductor G Cassabois, P Valvin, B Gil Nature photonics 10 (4), 262-266, 2016 | 1210 | 2016 |
| Photonics with hexagonal boron nitride JD Caldwell, I Aharonovich, G Cassabois, JH Edgar, B Gil, DN Basov Nature Reviews Materials 4 (8), 552-567, 2019 | 700 | 2019 |
| Ultrafast carrier dynamics in single-wall carbon nanotubes JS Lauret, C Voisin, G Cassabois, C Delalande, P Roussignol, O Jost, ... Physical review letters 90 (5), 057404, 2003 | 472 | 2003 |
| Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot A Berthelot, I Favero, G Cassabois, C Voisin, C Delalande, P Roussignol, ... Nature Physics 2 (11), 759-764, 2006 | 294 | 2006 |
| Direct band-gap crossover in epitaxial monolayer boron nitride C Elias, P Valvin, T Pelini, A Summerfield, CJ Mellor, TS Cheng, L Eaves, ... Nature communications 10 (1), 2639, 2019 | 234 | 2019 |
| Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots I Favero, G Cassabois, R Ferreira, D Darson, C Voisin, J Tignon, ... Physical Review B 68 (23), 233301, 2003 | 216 | 2003 |
| Efficient single photon emission from a high-purity hexagonal boron nitride crystal LJ Martínez, T Pelini, V Waselowski, JR Maze, B Gil, G Cassabois, ... Physical review B 94 (12), 121405, 2016 | 214 | 2016 |
| Ultra-coherent single photon source HS Nguyen, G Sallen, C Voisin, P Roussignol, C Diederichs, G Cassabois Applied Physics Letters 99 (26), 2011 | 146 | 2011 |
| Line narrowing in single semiconductor quantum dots: Toward the control of environment effects C Kammerer, C Voisin, G Cassabois, C Delalande, P Roussignol, F Klopf, ... Physical Review B 66 (4), 041306, 2002 | 144 | 2002 |
| Photoluminescence Up-Conversion in Single Self-Assembled Quantum Dots C Kammerer, G Cassabois, C Voisin, C Delalande, P Roussignol, ... Physical review letters 87 (20), 207401, 2001 | 132 | 2001 |
| Optically gated resonant emission of single quantum dots HS Nguyen, G Sallen, C Voisin, P Roussignol, C Diederichs, G Cassabois Physical review letters 108 (5), 057401, 2012 | 124 | 2012 |
| Single artificial atoms in silicon emitting at telecom wavelengths W Redjem, A Durand, T Herzig, A Benali, S Pezzagna, J Meijer, ... Nature Electronics 3 (12), 738-743, 2020 | 123 | 2020 |
| Interferometric correlation spectroscopy in single quantum dots C Kammerer, G Cassabois, C Voisin, M Perrin, C Delalande, ... Applied Physics Letters 81 (15), 2737-2739, 2002 | 121 | 2002 |
| Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes S Berger, C Voisin, G Cassabois, C Delalande, P Roussignol, X Marie Nano letters 7 (2), 398-402, 2007 | 120 | 2007 |
| Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy TQP Vuong, G Cassabois, P Valvin, E Rousseau, A Summerfield, ... 2D Materials 4 (2), 021023, 2017 | 119 | 2017 |
| Isotope engineering of van der Waals interactions in hexagonal boron nitride TQP Vuong, S Liu, A Van der Lee, R Cuscó, L Artús, T Michel, P Valvin, ... Nature materials 17 (2), 152-158, 2018 | 115 | 2018 |
| Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment I Favero, A Berthelot, G Cassabois, C Voisin, C Delalande, P Roussignol, ... Physical Review B 75 (7), 073308, 2007 | 114 | 2007 |
| Phonon-photon mapping in a color center in hexagonal boron nitride TQP Vuong, G Cassabois, P Valvin, A Ouerghi, Y Chassagneux, C Voisin, ... Physical review letters 117 (9), 097402, 2016 | 104 | 2016 |
| Temperature dependence of Raman-active phonons and anharmonic interactions in layered hexagonal BN R Cuscó, B Gil, G Cassabois, L Artús Physical Review B 94 (15), 155435, 2016 | 88 | 2016 |
| Broad diversity of near-infrared single-photon emitters in silicon A Durand, Y Baron, W Redjem, T Herzig, A Benali, S Pezzagna, J Meijer, ... Physical Review Letters 126 (8), 083602, 2021 | 87 | 2021 |
