| High-κ dielectrics for advanced carbon-nanotube transistors and logic gates A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ... Nature materials 1 (4), 241-246, 2002 | 1427 | 2002 |
| Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation YW Chen, JD Prange, S Dühnen, Y Park, M Gunji, CED Chidsey, ... Nature materials 10 (7), 539-544, 2011 | 844 | 2011 |
| The properties of ferroelectric films at small dimensions TM Shaw, S Trolier-McKinstry, PC McIntyre Annual Review of Materials Science 30 (1), 263-298, 2000 | 661 | 2000 |
| Germanium nanowire field-effect transistors with and high-κ gate dielectrics D Wang, Q Wang, A Javey, R Tu, H Dai, H Kim, PC McIntyre, ... Applied Physics Letters 83 (12), 2432-2434, 2003 | 639 | 2003 |
| Germanium MOS capacitors incorporating ultrathin high-/spl kappa/gate dielectric CO Chui, S Ramanathan, BB Triplett, PC McIntyre, KC Saraswat IEEE Electron Device Letters 23 (8), 473-475, 2002 | 435 | 2002 |
| Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba2YCu3O7−x on (001) LaAlO3 PC McIntyre, MJ Cima, JA Smith Jr, RB Hallock, MP Siegal, JM Phillips Journal of Applied Physics 71 (4), 1868-1877, 1992 | 343 | 1992 |
| A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/dielectric and metal gate CO Chui, H Kim, D Chi, BB Triplett, PC Mcintyre, KC Saraswat Digest. International Electron Devices Meeting,, 437-440, 2002 | 323 | 2002 |
| Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ... Advanced functional materials 27 (10), 1604811, 2017 | 320 | 2017 |
| Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition CM Perkins, BB Triplett, PC McIntyre, KC Saraswat, S Haukka, ... Applied Physics Letters 78 (16), 2357-2359, 2001 | 318 | 2001 |
| Germanium nanowire epitaxy: shape and orientation control H Adhikari, AF Marshall, CED Chidsey, PC McIntyre Nano letters 6 (2), 318-323, 2006 | 302 | 2006 |
| Effects of crystallization on the electrical properties of ultrathin dielectrics grown by atomic layer deposition H Kim, PC McIntyre, KC Saraswat Applied physics letters 82 (1), 106-108, 2003 | 288 | 2003 |
| Metalorganic deposition of high‐Jc Ba2YCu3O7−x thin films from trifluoroacetate precursors onto (100) SrTiO3 PC McIntyre, MJ Cima, MF Ng Journal of applied physics 68 (8), 4183-4187, 1990 | 284 | 1990 |
| Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes AG Scheuermann, JP Lawrence, KW Kemp, T Ito, A Walsh, CED Chidsey, ... Nature materials 15 (1), 99-105, 2016 | 275 | 2016 |
| Engineering chemically abrupt high-k metal oxide∕ silicon interfaces using an oxygen-gettering metal overlayer H Kim, PC McIntyre, C On Chui, KC Saraswat, S Stemmer Journal of Applied Physics 96 (6), 3467-3472, 2004 | 263 | 2004 |
| Ge-interface engineering with ozone oxidation for low interface-state density D Kuzum, T Krishnamohan, AJ Pethe, AK Okyay, Y Oshima, Y Sun, ... IEEE Electron Device Letters 29 (4), 328-330, 2008 | 236 | 2008 |
| Border traps in Al2O3/In0. 53Ga0. 47As (100) gate stacks and their passivation by hydrogen anneals EJ Kim, L Wang, PM Asbeck, KC Saraswat, PC McIntyre Applied Physics Letters 96 (1), 2010 | 227 | 2010 |
| Effects of catalyst material and atomic layer deposited TiO 2 oxide thickness on the water oxidation performance of metal–insulator–silicon anodes AG Scheuermann, JD Prange, M Gunji, CED Chidsey, PC McIntyre Energy & Environmental Science 6 (8), 2487-2496, 2013 | 218 | 2013 |
| A Distributed Model for Border Traps in MOS Devices Y Yuan, L Wang, B Yu, B Shin, J Ahn, PC McIntyre, PM Asbeck, ... IEEE Electron Device Letters 32 (4), 485-487, 2011 | 216 | 2011 |
| Thermal properties of ultrathin hafnium oxide gate dielectric films MA Panzer, M Shandalov, JA Rowlette, Y Oshima, YW Chen, PC McIntyre, ... IEEE Electron Device Letters 30 (12), 1269-1271, 2009 | 211 | 2009 |
| Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre Applied physics letters 96 (15), 2010 | 201 | 2010 |
