| The dawn of Ga2O3 HEMTs for high power electronics-A review R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen Materials Science in Semiconductor Processing 119, 105216, 2020 | 122 | 2020 |
| A novel β‐Ga2O3 HEMT with fT of 166 GHz and X‐band POUT of 2.91 W/mm R Singh, TR Lenka, RT Velpula, B Jain, HQT Bui, HPT Nguyen International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021 | 26 | 2021 |
| Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications GP Rao, TR Lenka, R Singh, HPT Nguyen Journal of the Korean Physical Society 81 (9), 876-884, 2022 | 15 | 2022 |
| Operation Principle of AlGaN/GaN HEMT GP Rao, R Singh, TR Lenka HEMT Technology and Applications, 105-114, 2022 | 15 | 2022 |
| Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications G Purnachandra Rao, R Singh, TR Lenka HEMT Technology and Applications, 139-153, 2022 | 12 | 2022 |
| Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study DK Panda, R Singh, TR Lenka, TT Pham, RT Velpula, B Jain, HQT Bui, ... IET Circuits, Devices & Systems 14 (7), 1018-1025, 2020 | 12 | 2020 |
| Simulation modelling of III‐Nitride/β‐Ga2O3 Nano‐HEMT for microwave and millimetre wave applications GP Rao, R Singh, TR Lenka, NEI Boukortt, HPT Nguyen International Journal of RF and Microwave Computer‐Aided Engineering 32 (12 …, 2022 | 10 | 2022 |
| Investigation of E-mode beta-gallium oxide MOSFET for emerging nanoelectronics R Singh, TR Lenka, RT Velpula, BHQ Thang, HPT Nguyen 2019 IEEE 14th nanotechnology materials and devices conference (NMDC), 1-5, 2019 | 10 | 2019 |
| Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics R Singh, TR Lenka, HPT Nguyen Journal of Electronic Materials 49, 5266-5271, 2020 | 7 | 2020 |
| Comparative Study of III-Nitride Nano-HEMTs on different substrates for emerging high-power nanoelectronics and millimetre wave applications G Purnachandra Rao, TR Lenka, R Singh, NEI Boukortt, SM Sadaf, ... Journal of Electronic Materials 52 (3), 1948-1957, 2023 | 6 | 2023 |
| Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT R Singh, TR Lenka, DK Panda, HPT Nguyen, NEI Boukortt, G Crupi Materials Science in Semiconductor Processing 145, 106627, 2022 | 6 | 2022 |
| Comparative power analysis of CMOS & adiabatic logic gates H Sharma, R Singh 2015 International Conference on Green Computing and Internet of Things …, 2015 | 6 | 2015 |
| Analytical modeling of dielectric modulated negative capacitance MoS2 field effect transistor for next‐generation label‐free biosensor DK Panda, TR Lenka, R Singh, V Goyal, NEI Boukortt, HPT Nguyen International Journal of Numerical Modelling: Electronic Networks, Devices …, 2023 | 5 | 2023 |
| The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3 Nano-HEMT GP Rao, N Baruah, TR Lenka, R Singh, B Nour El I, HPT Nguyen 2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022 | 5 | 2022 |
| Stochastic optimization method for signalized traffic signal systems D Singh, R Singh International Journal of Knowledge-Based and Intelligent Engineering Systems …, 2009 | 5 | 2009 |
| Analytical modelling of dielectric modulated negative capacitance MoS2-FET for biosensor application DK Panda, R Singh, T Lenka, V Goyal, NEI Boukortt, H Nguyen Authorea Preprints, 2023 | 4 | 2023 |
| Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 Substrate for Emerging Terahertz Applications GP Rao, N Baruah, TR Lenka, R Singh, SM Sadaf, HPT Nguyen 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022 | 3 | 2022 |
| Breakdown Characteristics Study of III-Nitride/ Nano-HEMT as a function of Field-Plate Length & AlN Nucleation Layer Thickness GP Rao, TR Lenka, R Singh, B Nour El I, HPT Nguyen, G Crupi 2022 IEEE Calcutta Conference (CALCON), 30-33, 2022 | 3 | 2022 |
| Optimized RTL design of a vending machine through FSM using verilog HDL P Chidananda Datta, C Vinay Kumar, R Singh, K Mummaneni Micro and Nanoelectronics Devices, Circuits and Systems: Select Proceedings …, 2022 | 3 | 2022 |
| Investigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT R Singh, TR Lenka, RT Velpula, B Jain, HQT Bui, HPT Nguyen Journal of Semiconductors 41 (10), 102802, 2020 | 3 | 2020 |
Trupti Ranjan LenkaNational Institute of Technology Silchar, Assam, INDIAVerified email at ieee.org
