Matthew R. Phillips
Matthew R. Phillips
Emeritus Professor of Applied Physics, University of Technology Sydney
Verified email at - Homepage
Cited by
Cited by
Cathodoluminescence microcharacterization of the defect structure of quartz
MAS Kalceff, MR Phillips
Physical Review B 52 (5), 3122, 1995
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ...
Physical Review B 84 (3), 035313, 2011
Characteristics of point defects in the green luminescence from Zn-and O-rich ZnO
C Ton-That, L Weston, MR Phillips
Physical Review B 86 (11), 115205, 2012
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
E Chikoidze, A Fellous, A Perez-Tomas, G Sauthier, T Tchelidze, ...
Materials Today Physics 3, 118-126, 2017
Nanoindentation of epitaxial GaN films
SO Kucheyev, JE Bradby, JS Williams, C Jagadish, M Toth, MR Phillips, ...
Applied Physics Letters 77 (21), 3373-3375, 2000
Chemical origin of the yellow luminescence in GaN
SO Kucheyev, M Toth, MR Phillips, JS Williams, C Jagadish, G Li
Journal of Applied Physics 91 (9), 5867-5874, 2002
Fe in III–V and II–VI semiconductors
E Malguth, A Hoffmann, MR Phillips
physica status solidi (b) 245 (3), 455-480, 2008
Indentation-induced damage in GaN epilayers
JE Bradby, SO Kucheyev, JS Williams, J Wong-Leung, MV Swain, ...
Applied Physics Letters 80 (3), 383-385, 2002
Contact-induced defect propagation in ZnO
JE Bradby, SO Kucheyev, JS Williams, C Jagadish, MV Swain, P Munroe, ...
Applied physics letters 80 (24), 4537-4539, 2002
Direct experimental evidence for the role of oxygen in the luminescent properties of GaN
M Toth, K Fleischer, MR Phillips
Physical Review B 59 (3), 1575, 1999
Structural and electronic properties of Fe 3+ and Fe 2+ centers in GaN from optical and EPR experiments
E Malguth, A Hoffmann, W Gehlhoff, O Gelhausen, MR Phillips, X Xu
Physical Review B 74 (16), 165202, 2006
Depth profiling of GaN by cathodoluminescence microanalysis
K Fleischer, M Toth, MR Phillips, J Zou, G Li, SJ Chua
Applied physics letters 74 (8), 1114-1116, 1999
Cathodoluminescence microcharacterisation of silicon dioxide polymorphs
MAS Kalceff, MR Phillips, AR Moon, W Kalceff
Cathodoluminescence in geosciences, 193-224, 2000
Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence
N Pauc, MR Phillips, V Aimez, D Drouin
Applied physics letters 89 (16), 161905, 2006
Monte Carlo modeling of cathodoluminescence generation using electron energy loss curves
M Toth, MR Phillips
Scanning: The Journal of Scanning Microscopies 20 (6), 425-432, 1998
Nanostructure fabrication by ultra-high-resolution environmental scanning electron microscopy
M Toth, CJ Lobo, WR Knowles, MR Phillips, MT Postek, AE Vladár
Nano letters 7 (2), 525-530, 2007
Dissociation of H-related defect complexes in Mg-doped GaN
O Gelhausen, MR Phillips, EM Goldys, T Paskova, B Monemar, ...
Physical Review B 69 (12), 125210, 2004
Blue shift in the luminescence spectra of MEH-PPV films containing ZnO nanoparticles
C Ton-That, MR Phillips, TP Nguyen
Journal of Luminescence 128 (12), 2031-2034, 2008
Defect Clustering and Color in Fe,Ti: α‐Al2O3
AR Moon, MR Phillips
Journal of the American Ceramic Society 77 (2), 356-367, 1994
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements
G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ...
Applied Physics Letters 98 (6), 061906, 2011
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