| Superconductivity in diamond thin films well above liquid helium temperature Y Takano, M Nagao, I Sakaguchi, M Tachiki, T Hatano, K Kobayashi, ... Applied physics letters 85 (14), 2851-2853, 2004 | 362 | 2004 |
| High temperature application of diamond power device H Umezawa, M Nagase, Y Kato, S Shikata Diamond and related materials 24, 201-205, 2012 | 186 | 2012 |
| Recent advances in diamond power semiconductor devices H Umezawa Materials Science in Semiconductor Processing 78, 147-156, 2018 | 171 | 2018 |
| Electrolyte‐Solution‐Gate FETs Using Diamond Surface for Biocompatible Ion Sensors H Kawarada, Y Araki, T Sakai, T Ogawa, H Umezawa physica status solidi (a) 185 (1), 79-83, 2001 | 157 | 2001 |
| Diamond metal–semiconductor field-effect transistor with breakdown voltage over 1.5 kV H Umezawa, T Matsumoto, SI Shikata IEEE Electron Device Letters 35 (11), 1112-1114, 2014 | 156 | 2014 |
| Power electronics device applications of diamond semiconductors S Koizumi, H Umezawa, J Pernot, M Suzuki Woodhead publishing, 2018 | 153 | 2018 |
| Leakage current analysis of diamond Schottky barrier diode H Umezawa, T Saito, N Tokuda, M Ogura, SG Ri, H Yoshikawa, S Shikata Applied Physics Letters 90 (7), 2007 | 148 | 2007 |
| Fabrication of 1 inch mosaic crystal diamond wafers H Yamada, A Chayahara, Y Mokuno, H Umezawa, S Shikata, N Fujimori Applied Physics Express 3 (5), 051301, 2010 | 136 | 2010 |
| High-frequency performance of diamond field-effect transistor H Taniuchi, H Umezawa, T Arima, M Tachiki, H Kawarada IEEE Electron Device Letters 22 (8), 390-392, 2001 | 128 | 2001 |
| Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance K Hirama, H Takayanagi, S Yamauchi, JH Yang, H Kawarada, ... Applied Physics Letters 92 (11), 2008 | 127 | 2008 |
| Superconducting properties of homoepitaxial CVD diamond Y Takano, T Takenouchi, S Ishii, S Ueda, T Okutsu, I Sakaguchi, ... Diamond and related materials 16 (4-7), 911-914, 2007 | 125 | 2007 |
| 1 Ω on-resistance diamond vertical-Schottky barrier diode operated at 250° C H Umezawa, Y Kato, S Shikata Applied Physics Express 6 (1), 011302, 2012 | 124 | 2012 |
| Control wettability of the hydrogen-terminated diamond surface and the oxidized diamond surface using an atomic force microscope Y Kaibara, K Sugata, M Tachiki, H Umezawa, H Kawarada Diamond and Related Materials 12 (3-7), 560-564, 2003 | 113 | 2003 |
| Fabrication and fundamental characterizations of tiled clones of single-crystal diamond with 1-inch size H Yamada, A Chayahara, H Umezawa, N Tsubouchi, Y Mokuno, ... Diamond and Related materials 24, 29-33, 2012 | 102 | 2012 |
| Thermally stable Schottky barrier diode by Ru/diamond K Ikeda, H Umezawa, K Ramanujam, S Shikata Applied Physics Express 2 (1), 011202, 2009 | 96 | 2009 |
| Superconductivity in polycrystalline diamond thin films Y Takano, M Nagao, T Takenouchi, H Umezawa, I Sakaguchi, M Tachiki, ... Diamond and related materials 14 (11-12), 1936-1938, 2005 | 91 | 2005 |
| Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications H Umezawa, S Shikata, T Funaki Japanese Journal of Applied Physics 53 (5S1), 05FP06, 2014 | 86 | 2014 |
| Increase in reverse operation limit by barrier height control of diamond Schottky barrier diode H Umezawa, K Ikeda, R Kumaresan, N Tatsumi, S Shikata IEEE electron device letters 30 (9), 960-962, 2009 | 80 | 2009 |
| High-performance p-channel diamond MOSFETs with alumina gate insulator K Hirama, H Takayanagi, S Yamauchi, Y Jingu, H Umezawa, H Kawarada 2007 IEEE International Electron Devices Meeting, 873-876, 2007 | 77 | 2007 |
| Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling H Umezawa, N Tokuda, M Ogura, SG Ri, S Shikata Diamond and related materials 15 (11-12), 1949-1953, 2006 | 74 | 2006 |
Hiroshi KAWARADAWaseda UniversityVerified email at waseda.jp
