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Saurabh Lodha
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Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
A Nipane, D Karmakar, N Kaushik, S Karande, S Lodha
ACS nano 10 (2), 2128-2137, 2016
3642016
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
3032017
High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors
P Packan, S Akbar, M Armstrong, D Bergstrom, M Brazier, H Deshpande, ...
2009 IEEE international electron devices meeting (IEDM), 1-4, 2009
2862009
A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2SRAM cell size in a 291Mb array
S Natarajan, M Armstrong, M Bost, R Brain, M Brazier, CH Chang, ...
2008 IEEE International Electron Devices Meeting, 1-3, 2008
2862008
Schottky barrier heights for Au and Pd contacts to MoS2
N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, MM Deshmukh, ...
Applied Physics Letters 105 (11), 2014
2682014
Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors
Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied physics letters 112 (23), 2018
1672018
Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics
A Varghese, D Saha, K Thakar, V Jindal, S Ghosh, N Medhekar, S Ghosh, ...
Nano Letters 20 (3), 1707-1717, 2020
1612020
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
1522019
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
1482018
Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2
N Kaushik, D Karmakar, A Nipane, S Karande, S Lodha
ACS applied materials & interfaces 8 (1), 256-263, 2016
1392016
Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
1382018
Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer
P Paramahans Manik, R Kesh Mishra, V Pavan Kishore, P Ray, A Nainani, ...
Applied Physics Letters 101 (18), 2012
1342012
Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts
S Gupta, P Paramahans Manik, R Kesh Mishra, A Nainani, MC Abraham, ...
Journal of Applied Physics 113 (23), 2013
1182013
Punchthrough-diode-based bipolar RRAM selector by Si epitaxy
VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ...
IEEE Electron Device Letters 33 (10), 1396-1398, 2012
1082012
Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors
C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
1012019
Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
992018
Optoelectronic and photonic devices based on transition metal dichalcogenides
K Thakar, S Lodha
Materials Research Express 7 (1), 014002, 2020
982020
Self-limiting atomic thermal etching systems and methods
RR Arnepalli, PS Goradia, RJ Visser, N Ingle, M Korolik, J Biswas, ...
US Patent 10,043,684, 2018
952018
Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications
K Thakar, B Mukherjee, S Grover, N Kaushik, M Deshmukh, S Lodha
ACS applied materials & interfaces 10 (42), 36512-36522, 2018
932018
Reversible hysteresis inversion in MoS2 field effect transistors
N Kaushik, DMA Mackenzie, K Thakar, N Goyal, B Mukherjee, P Boggild, ...
npj 2D Materials and Applications 1 (1), 34, 2017
922017
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