Fulvia Patella
Fulvia Patella
University of Roma Tor Vergata
Verified email at roma2.infn.it
TitleCited byYear
Nature of the dead layer in CdS and its effect on exciton reflectance spectra
F Evangelisti, A Frova, F Patella
Physical Review B 10 (10), 4253, 1974
Growth of Ge–Si (111) epitaxial layers: intermixing, strain relaxation and island formation
N Motta, A Sgarlata, R Calarco, Q Nguyen, JC Cal, F Patella, A Balzarotti, ...
Surface science 406 (1-3), 254-263, 1998
Palladium clusters on graphite: Evidence of resonant hybrid states in the valence and conduction bands
M Cini, M De Crescenzi, F Patella, N Motta, M Sastry, F Rochet, ...
Physical Review B 41 (9), 5685, 1990
Tracing the two-to three-dimensional transition in the InAs/GaAs (001) heteroepitaxial growth
F Patella, S Nufris, F Arciprete, M Fanfoni, E Placidi, A Sgarlata, ...
Physical Review B 67 (20), 205308, 2003
Valence charge fluctuations in Y Ba 2 Cu 3 O 7− δ from core-level spectroscopies
A Balzarotti, M De Crescenzi, N Motta, F Patella, A Sgarlata
Physical Review B 38 (10), 6461, 1988
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs (001)
F Patella, F Arciprete, M Fanfoni, A Balzarotti, E Placidi
Applied physics letters 88 (16), 161903, 2006
Bremsstrahlung-isochromat-spectroscopy and x-ray-photoelectron-spectroscopy investigation of the electronic structure of β-FeSi 2 and the Fe/Si (111) interface
M De Crescenzi, G Gaggiotti, N Motta, F Patella, A Balzarotti, J Derrien
Physical Review B 42 (9), 5871, 1990
Low-energy electron-loss spectroscopy and Auger-electron-spectroscopy studies of noble-metal—silicon interfaces: Si-Au system
P Perfetti, S Nannarone, F Patella, C Quaresima, M Capozi, A Savoia, ...
Physical Review B 26 (3), 1125, 1982
Step erosion during nucleation of quantum dots
E Placidi, F Arciprete, V Sessi, M Fanfoni, F Patella, A Balzarotti
Applied Physics Letters 86 (24), 241913, 2005
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces
F Patella, A Sgarlata, F Arciprete, S Nufris, PD Szkutnik, E Placidi, ...
Journal of Physics: Condensed Matter 16 (17), S1503, 2004
InAs/GaAs (001) epitaxy: kinetic effects in the two-dimensional to three-dimensional transition
E Placidi, F Arciprete, M Fanfoni, F Patella, E Orsini, A Balzarotti
Journal of Physics: Condensed Matter 19 (22), 225006, 2007
Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs (001)
F Patella, M Fanfoni, F Arciprete, S Nufris, E Placidi, A Balzarotti
Applied Physics Letters 78 (3), 320-322, 2001
Experimental study of the GaP-Si interface
P Perfetti, F Patella, F Sette, C Quaresima, C Capasso, A Savoia, ...
Physical Review B 30 (8), 4533, 1984
Surface electronic structure studies of GaAs (110)
JA Knapp, DE Eastman, KC Pandey, F Patella
Journal of Vacuum Science and Technology 15 (4), 1252-1255, 1978
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of
F Arciprete, E Placidi, V Sessi, M Fanfoni, F Patella, A Balzarotti
Applied physics letters 89 (4), 041904, 2006
Electronic correlations in Y Ba 2 Cu 3 O 7− δ from Auger spectroscopy
A Balzarotti, M De Crescenzi, C Giovannella, R Messi, N Motta, F Patella, ...
Physical Review B 36 (16), 8285, 1987
Photoemission studies of a‐SixC1−x:H/a‐Si and a‐SixC1−x:H/ hydrogenated amorphous silicon heterojunctions
F Evangelisti, P Fiorini, C Giovannella, F Patella, P Perfetti, C Quaresima, ...
Applied physics letters 44 (8), 764-766, 1984
Temperature dependence of the size distribution function of InAs quantum dots on GaAs (001)
F Arciprete, M Fanfoni, F Patella, A Della Pia, A Balzarotti, E Placidi
Physical Review B 81 (16), 165306, 2010
Sudden nucleation versus scale invariance of InAs quantum dots on GaAs
M Fanfoni, E Placidi, F Arciprete, E Orsini, F Patella, A Balzarotti
Physical Review B 75 (24), 245312, 2007
Resonant photoemission from surface states in GaP
F Sette, P Perfetti, F Patella, C Quaresima, C Capasso, M Capozi, ...
Physical Review B 28 (8), 4882, 1983
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